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Nondestructive characterization of residual strain in large-diameter semiconductor crystal ingot using three-dimensional infrared photoelastic CT method

Research Project

Project/Area Number 13555004
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Applied materials science/Crystal engineering
Research InstitutionKYOTO INSTITUTE OF TECHNOLOGY

Principal Investigator

YAMADA Masayoshi  KYOTO INSTITUTE OF TECHNOLOGY, FACULTY OF ENGINEERING AND DESIGN, PROFESSOR, 工芸学部, 教授 (70029320)

Co-Investigator(Kenkyū-buntansha) TATSUMI Masami  SUMITOMO ELECTRIC INDUSUTRIES, LTD., SEMICONDUCTOR R&D LABS., DIRECTOR, 半導体研究所, 所長
FUKUZAWA Masayuki  KYOTO INSTITUTE OF TECHNOLOGY, FACULTY OF ENGINEERING AND DESIGN, RESEARCH ASSOCIATE, 工芸学部, 助手 (60293990)
Project Period (FY) 2001 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥13,000,000 (Direct Cost: ¥13,000,000)
Fiscal Year 2003: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 2002: ¥4,500,000 (Direct Cost: ¥4,500,000)
Fiscal Year 2001: ¥7,000,000 (Direct Cost: ¥7,000,000)
Keywordssemiconductor / infrared photoelasticity / non-destroying characterization / residual strain
Research Abstract

The purpose of this work is to develop a new technique by which there e-dimensional distribution of residual strain in large-diameter semiconductor crystal ingots such as silicon and GaAs can be characterized nondestructively as standard ingot form and then for it to be intended for practical use. To do so, we have developed a three-dimensional infrared photoelastic CT equipment, in which a linearly-polarized light beam is introduced both along to the z-axis into a cylindrical semiconductor crystal ingot and the polarization of the transmitted light beam is analyzed, and then pratically characterized the residual strain in LEC-grown GaAs single crystal ingots, FZ-grown dislocation-free Si single crystal ingots, and CZ-grown Si single crystal ingots.
It was difficult for us to make the infrared photoelastic measurement in as-grown LEC-GaAs ingots, because there were many concave or convex ditches on their cylindrical surface. However, we have designed a new technique by which we can make … More the photoelastic measurement in cylindrically-grinded ingots under the condition of rough surfaces, not polished mirror surfaces. With this new technique, we become able to characterize pseudo-three-dimensional distribution of residual strain in LEC-GaAs single crystal ingots. On the other hand, it was possible for us to make the infrared photoelstic measurement in dislocation-free FZ-Si single crystal ingots. It was found that the birefringence induced due to optical anisotropy was dominated over that photoelastically induced by residual strain, since the residual strain was extremely small in the FZ-Si ingots. Although the optical anisotropy was also dominated in CZ-grown Si ingots, we have demonstrated that the residual-strain-induced birefringence can be measu.
Red by introducing the probing infrared light beam along the [100] crystallographic directions. According to our work, the infrared photoelastic technique developed here is very useful in investigating dislocations in large-diameter Si single crystals. Less

Report

(4 results)
  • 2003 Annual Research Report   Final Research Report Summary
  • 2002 Annual Research Report
  • 2001 Annual Research Report
  • Research Products

    (23 results)

All Other

All Publications (23 results)

  • [Publications] T.Chu, M.Yamada, J.Donecker, M.Rossberg, V.Alex, H.Riemann: "Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals"Materials Science and Engineering. B91-92. 174-177 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Yamada, T.Chu: "Pseudo-three-dimensional photoelastic characterization of LEC-GaAs single crystal ingot"Institute of Physics, Conference Series. No.170. 681-686 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Yamada, T.Chu: "Inspection of residual strain in GaAs single crystal as standard ingot form"Proceedings of 2002 12^<th> International Conference on Semiconducting and Insulating Materials. IEEE Catalog No.02CH37343. 19-22 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Chu, M.Yamada, J.Donecker, M.Rossberg, V.Alex, H.Riemann: "Optical anisotropy in dislocation-free silicon single crystals"Microelectronic Engineering. Vol.66. 327-332 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Yamada, N.Zui, T.Chu: "Defect-induced birefringence in crystalline silicon ingots"European Physical Journal Applied Physics. (in press). (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Techs, M.Yamada, J.Donecker, M.Rossberg, V.Alex, H.Riemann: "Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals"Materials Science and Engineering. B91-92. 174-177 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Yamada, T.Chu: "Pseudo-three-dimensional photoelastic, characterization of LEC-GaAs single crystal ingot"Institute of Physics. Confernce Series No.170. 681-686 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Yamada, T.Chu: "Inspection of residual strain in Gas single crystal as standard ingot form"Proceedings of 2002 12^<th> International Conference on Semiconducting and Insulating Materials. IEEE Catalog No.02CH37343. 19-22 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Chu, M.YAmada, J.Donecker, M.Rossberg, V.Alex, H.Riemann: "Optical anisotropy in dislocation-free silicon single crystals"Microelectronic Engineering. Vol.66. 327-332 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Yamada, N.Zui, T.Chu: "Defect-induced birefringence in crystalline silicon ingots"European Physical Journal Applied Physics. (in press). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Yamada, N.Zui, T.Chu: "Defect-induced birefringence in crystalline silicon ingots"The European Physical Journal Applied Physics. (In press). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Chu, N.Zui, M.Yamada: "Defect-induced Birefringence in Crystalline Silicon Ingots"Abstracts of 10^<th> Int.Conf.On Defects : Recognition, Imaging and Physics in Semiconductors. 98 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] 頭井直樹, 山田正良: "CZ-Si単結晶中の複屈折のインゴット状態での非破壊評価"第51回応用物理学関係連合講演会講演予講集. No.1. 310 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Chu, M.Yamada, J.Donecker, M.Rossberg, V.Alex, H.Riemann: "Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals"Materials Science & Engineering. B91-92. 174-177 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Yamada, T.Chu: "Pseudo-three-dimensional photoelastic characterization of LEC-GaAs single crystal ingot"Institute of Physics Conference Series. No.170. 681-686 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Chu, M.Yamada, J.Donecker, M.Rossberg, V.Alex, H.Riemann: "Optical anisotropy in dislocation-free silicon single crystals"Microelectronic Engineering. (In press). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Yamada, T.Chu: "Inspection of residual strain in GaAs single crystal as standard ingot form"XIIth Semiconducting and Insulating Materials Conference (SIMC-XII-2002) IEEE EDS Conference Proceedings. (In press). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Chu, M.Yamada, J.Donecker, M.Rossberg, V.Alex, H.Riemann: "Optical anisotropy in dislocation-free silicon single crystals"Proceeding of 8th IUMRS International Conference on Electronic Materials. 486 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Yamada, T.Chu: "Inspection of residual strain in GaAs single crystal as standard ingot form"XIIth Semiconducting and Insulating Materials Conference (SIMC-XII-2002) Programme & Abstracts. 16 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] 儲 涛, 山田正良: "GaAs結晶インゴット内部歪みの光弾性評価"第63回応用物理学関係連合講演会講演予稿集. No.1. 245 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] 儲涛, 頭井直樹, 山田正良: "CZ-Si結晶インゴット内部歪みの非破壊評価"第50回応用物理学関係連合講演会講演予稿集. No.1(In press). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] 儲 涛, 山田正良: "LEC-GaAs単結晶インゴットの疑似三次元赤外光弾性評価"第62回応用物理学会学術講演会講演予講集. No.1. 11a-S-4 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Yamada, T.Chu: "Pseudo-three-dimensional photoelastic characterization of LEC-GaAs single crystal ingots"Proc. of the 28th Int. Symp. On Compound Semiconductors, Tokyo/Japan. 19 (2001)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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