Growth and characterization of Isotopically Enrichied ^<28>Si Single Crystals
| Project/Area Number |
13555005
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Keio University |
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Principal Investigator |
ITOH Kohei Keio University, Faculty of Science & Technology, Associate Professor, 理工学部, 助教授 (30276414)
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| Co-Investigator(Kenkyū-buntansha) |
HIBIYA Taketoshi NEC Co, Fundamental Research Laboratories, Principal Researcher, 基礎研究所, 主管研究員
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| Project Period (FY) |
2001 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥13,200,000 (Direct Cost: ¥13,200,000)
Fiscal Year 2002: ¥2,900,000 (Direct Cost: ¥2,900,000)
Fiscal Year 2001: ¥10,300,000 (Direct Cost: ¥10,300,000)
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| Keywords | silicon / thermal conductivity / IC / isotope / 半導体 |
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| Research Abstract |
We report on the measurements of the thermal conductivity of natural (^<nat>Si) and isotopically pure ^<28>Si as a function of temperature. The isotopically enrichied ^<28>Si employed is dislocation free with the electrically active net-impurity concentration (p-type) less than 1x10^<15>cm^<-3>. Oxygen and carbon concentrations are less than 1x10^<17>cm^<-3> for it was under the detection limit of FTIR. At room temperature, the ^<28>Si sample is measured to have the thermal conductivity about 10% higher than that of ^<nat>Si. This increase is in agreement with the experimental result reported recently [A. V. Gusev, A. M. Gibin, O. N. Morozkin, V. A. Gavva, and A. V. Mitin, Inorganic Materials, 38, 1305 (2002)], but in sever disagreement with the previously reported value of 60% at the room temperature. [T. Ruf, R. W. Henn, M. Asen-Palmer, E. Gmelin, M. Cardona, H. -J. Pohl, G. G. Devyatych and P. G. Sennikov, Solid State Commun. 115, 243 (2000).] It is therefore important to identify the true thermal conductivity of ^<28>Si in the future.
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Report
(3 results)
Research Products
(4 results)
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[Publications] T. Takahashi, S. Fukatsu, K. M. Itoh, M, Uematsu, A. Fujiwara, H. Kageshima, Y. Takahashi, and K, Shiraishi: "Self-Diffusion of Si in Thermally Grown SiO_2 under Equilibrium Conditions"J. Appl. Phys.. Vol.93, No.6. 3674-3676 (2003)
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