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Research on functional electronic devices based on straind-Si on SiGe alloy substrates

Research Project

Project/Area Number 13555086
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Electronic materials/Electric materials
Research InstitutionTohoku University

Principal Investigator

USAMI Noritaka  Institute for Materials Research, Associate Professor, 金属材料研究所, 助教授 (20262107)

Co-Investigator(Kenkyū-buntansha) KOH Shinji  The University of Tokyo, Research Associate, 大学院・工学系研究科, 助手 (50323663)
NAKAGAWA Kiyokazu  Yamanashi University, Professor, クリスタル科学研究センター, 教授 (40324181)
NAKAJIMA Kazuo  Institute for Materials Research, Professor, 金属材料研究所, 教授 (80311554)
UJIHARA Toru  Institute for Materials Research, Research Associate, 金属材料研究所, 助手 (60312641)
SAZAKI Gen  Institute for Materials Research, Lecturer, 金属材料研究所, 講師 (60261509)
Project Period (FY) 2001 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥13,300,000 (Direct Cost: ¥13,300,000)
Fiscal Year 2002: ¥2,800,000 (Direct Cost: ¥2,800,000)
Fiscal Year 2001: ¥10,500,000 (Direct Cost: ¥10,500,000)
KeywordsSilicon Germanium / Molecular Beam Epitaxy / Multicomponent Zone-melting Method / Strain-controlled thin film / Modulation doping / Two-dimensional hole gas
Research Abstract

The purpose of this research is to realize strain-controlled Si-based heterostructures with superior electronic properties on homemade SiGe substrates wish uniform Ge composition.
Firstly, we tried to develop a feedback control system of the crystal-melt interface position and temperature based on in-situ monitoring system. Automatic recognition of the interface position was successful by binarization and differentiation of the CCD image. By utilizing newly developed system, we succeeded in growing SiGe with uniform composition. To improve the crystal quality, we systematically changed the temperature gradient at around the crystal-melt interface. At a result, systematic decrease of the line-width of the X-ray rocking curve and increase of the intensity were confirmed presumably due to the suppression of constitutional supercooling. In addition, crystal quality was found to be strongly dependent on the orientation of the seed crystal.
On homemade SiGe, modulation doped structure with strained-Ge channel was grown by molecular beam epitaxy. Although improved carrier mobility was not achieved, controllability of strain was confiemed.

Report

(3 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • Research Products

    (24 results)

All Other

All Publications (24 results)

  • [Publications] Y.Azuma, N.Usami, T.Ujihara, K.Fujiwara, Y.Murakami, K.Nakajima: "Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature"J. Cryst. Growth. 250. 298-304 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K.Kutsukake, N.Usami, K.Fujiwara, T.Ujihara, G.Sazaki, K.Nakajima et al.: "Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate"Jpn. J. Appl. Phys.. 42. L232-L234 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K.Sawano, K.Arimoto, Y.Hirose, S.Koh, N.Usami, K.Nakagawa, T.Hattori, Y.Shiraki: "Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures"J. Cryst. Growth. 251. 693-696 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] N.Usami, T.Takahashi, K.Fujiwara, T.Ujihara, G.Sazaki, et al.: "Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution"J. Appl. Phys.. 92. 7098-7101 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K.Nakajima, T.Kusunoki, Y.Azuma, N.Usami, K.Fujiwara, et al.: "Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals"J. Cryst. Growth. 240. 373-381 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K.Fujiwara, Ke.Nakajima, T.Ujihara, N.Usami, G.Sazaki, et al.: "In situ observation of crystal growth behavior from silicon melt"J. Cryst. Growth. 243. 275-282 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y. Azuma, N. Usami, T. Ujihara, K.Fujiwara, Y. Murakami, K. Nakajima: "Growth of Sage bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature"J. Cryst. Growth. 250. 298-304 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K. kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, Y. Segawa: "Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate"Jpn. J. Appl. Phys.. 42. L232-L234 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K. Sawano, K. Arimoto, Y. Hirose, S. Koh, N. Usami, K. Nakagawa, T. Hattori, Y. Shiraki: "Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures"J. Cryst. Growth. 251. 693-696 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, K. Nakajima: "Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution"J. Appl. Phys.. 92. 7098-7101 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K. Nakajima, T. Kusumoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, T. Shishido: "Compositional variation in Si-rich Sage single crystals grown by multi-component zone melting method using Si seed and source crystals"J. Cryst. Growth. 240. 373-381 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K. Fujiwara, Ke. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguchi, K. Nakajima: "In situ observation of crystal growth behavior from silicon melt"J. Cryst. Growth. 243. 275-282 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y.Azuma, N.Usami, T.Ujihara, K.Fujiwara, Y.Murakami, K.Nakajima: "Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature"J. Cryst. Growth. 250. 298-304 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.Kutsukake, N.Usami, K.Fujiwara, T.Ujihara, G.Sazaki, K.Nakajuna et al.: "Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate"Jpn. J. Appl. Phys.. 42. L232-L234 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.Sawano, K.Arimoto, Y.Hirose, S.Koh, N.Usami, K.Nakagawa, T.Hattori, Y.Shiraki: "Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures"J. Cryst. Growth. (発表予定).

    • Related Report
      2002 Annual Research Report
  • [Publications] N.Usami, T.Takahashi, K.Fujiwara, T.Ujihara, G.Sazaki, et al.: "Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution"J. Appl. Phys.. 92. 7098-7101 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.Nakajima, T.Kusunoki, Y.Azuma, N.Usami, K.Fujiwara et al.: "Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals"J. Cryst. Growth. 240. 373-381 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.Fujiwara, Ke.Nakajima, T.Ujihara, N.Usami, G.Sazaki, et al.: "In situ observation of crystal growth behavior from silicon melt"J. Cryst. Growth. 243. 275-282 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] N.Usami et al.: "Growth of SixGel-x (x≒0.15) Bulk Crystal with Uniform Composition by Utilizing in situ Monitoring of the Crystal- Solution Interface"Jpn. J. Appl. Phys.. 40. 4141-4144 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] K.Kawaguchi et al.: "Fabrication of strain-balanced Si/Sil-xGex multiple quantum wells on Sil-yGey virtual substrates and their optical properties"Appl. Phys. Lett.. 79. 344-346 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] N.Usami et al.: "Modification of the growth mode of Ge on Si(100) in the presence of buried Ge islands"J. Cryst. Growth. 227/228. 782-785 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] N.V.Vostokov et al.: "The relation between composition and sizes of GeSi/Si(001) islands grown at different temperatures"Phys. Low-Dimens. Struct.. 3/4. 295-301 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] N.Usami et al.: "Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution"Jpn. J. Appl. Phys.. 41. L37-L39 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] N.Usami et al.: "Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures"Mat. Sci. Eng. B. 89. 364-367 (2002)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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