| Project/Area Number |
13555096
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Himeji Institute of Technology |
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Principal Investigator |
MATSUI Junji Himeji Institute of Technology, Graduate School of Science, Professor, 大学院・理学研究科, 教授 (10295751)
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| Co-Investigator(Kenkyū-buntansha) |
KAGOSHIMA Yasushi Himeji Institute of Technology, Graduate School of Science, Associate Professor, 大学院・理学研究科, 助教授 (10224370)
TSUSAKA Yoshiyuki Himeji Institute of Technology, Graduate School of Science, Research Associate, 大学院・理学研究科, 助手 (20270473)
KIMURA Shigeru Japan Synchrotron Radiation Institute, Senior Scientist, 利用研究促進部門, 主幹研究員 (50360821)
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| Project Period (FY) |
2001 – 2003
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| Project Status |
Completed (Fiscal Year 2003)
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| Budget Amount *help |
¥13,800,000 (Direct Cost: ¥13,800,000)
Fiscal Year 2003: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 2002: ¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 2001: ¥10,700,000 (Direct Cost: ¥10,700,000)
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| Keywords | Semiconductor Substrate / Lattice Strain / X-ray Microbeam / Synchrotron Radiation / Device Characteristics / LED / Semiconductor Laser / Silicon-on-Insulator Crystal / 非対称ブラッグ反射 / 円筒ミラー / ゾーンプレート / SOI / 薄膜 / 局所歪み / 電子デバイス / X線 / マイクロビーム / その場測定 |
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| Research Abstract |
It has been well known that the crystal lattice strain in semiconducting materials like silicon and gallium arsenide give origins for crystalline defects such as dislocations and may affect some device characteristics and their operation lives. As compared with usual X-ray diffractometry combined with laboratory X-ray sources, an X-ray microbeam made of a synchrotron light source at SPring-8 is very useful to measure minute strain being as small as less than 10^<-4>. The X-ray microbeam here obtained has a few μm in size and high parallelism.
By scanning the X-ray microbeam on surfaces of various semiconductor crystal samples such as silicon-on-insulator (SOL) layers, SiGe layers and also GaAlAs LED crystals, local strain magnitude less than 10^<-4> were measured even during device operation. This technique will be promising for more precise characterization of next-generation substrates like strained silicon for future high-speed devices.
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