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Low-Temperature Growth of Ferroelectric and Electrode Thin Films by MOCVD and Their Application to Three-Dimensional High Density Memories

Research Project

Project/Area Number 13555097
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Electronic materials/Electric materials
Research InstitutionHimeji Institute of Technology

Principal Investigator

SHIMIZU Masaru  Himeji Inst. Tech., Grad. School of Eng.., Assoc. Prof., 工学研究科, 助教授 (30154305)

Co-Investigator(Kenkyū-buntansha) FUJIMORI Yoshikazu  ROHM Co. Ltd. Semicon, R&D Div., Researcher, 半導体デバイス研究開発部, 研究員
FUJISAWA Hironori  Himeji Inst. Tech., Grad. School of Eng.., Res. Associate, 工学研究科, 助手 (30285340)
NIU Hirohiko  Himeji Inst. Tech., Grad. School of Eng.., Prof., 工学研究科, 教授 (40047618)
KADOKURA Hidekimi  Kojyundo Chemical Lab. Ltd., Fine Chemical Div. Researcher, ファインケミカル部, 研究員
Project Period (FY) 2001 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥5,200,000 (Direct Cost: ¥5,200,000)
Fiscal Year 2002: ¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 2001: ¥3,100,000 (Direct Cost: ¥3,100,000)
Keywordslow temperature growth / MOCVD / PZT thin film / Ir thin film step coverage / ferroelectric capacitor / three-dimensional capacitor / ferroelectric thin film memory / 強誘電体薄膜メモリ / 低温成長 / Ir系電極 / PZTキャパシタ / NOCVD法 / Pb(Zr, Ti)O_3(PZT)薄膜 / 段差被膜性
Research Abstract

Our research results obtained in this project are summarized below;
1. Pb(Zr,Ti)O_3(PZT) thin films were successfully obtained at 370℃ by MOCVD using PbTiO_3(PTO) seeds.
2. Crystalline and ferroelectric properties of PZT thin films were strongly influenced by crystallinity of PTO seeds.
3. PZT films grown below Curie Temperature (Tc) has more volume fraction of c-axis-oriented domain than that of films grow at temperatures higher than Tc.
4. Ir films with a highly c-axis orientation and mirror like surface were successfully grown at 250-350℃ by MOCVD using a new Ir precursor, Ir(EtCp)(cod). At temperatures lower than 300℃, the incubation tune for Ir films was observed.
5. Three-dimensional structured Ir/PZT/Ir capacitors were successfully fabricated at lower than 400℃ solely by MOCVD. PZT and Ir in this structure showed step coverages of higher than 80%.
6. We developed the low temperature fabrication technique of PZT capacitors solely by MOCVD and this MOCVD technique proved to be very useful technique for 3D-structure capacitor.

Report

(3 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • Research Products

    (24 results)

All Other

All Publications (24 results)

  • [Publications] M.Shimizu: "Growth of Ferroelectric PbZr_xTi_<1-x>O_3 Thin Films by Metalorganic Chemical Vapor Deposition"Journal of Crystal Growth. 237-239. 448-454 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Shimizu: "Low Temperature Growth of Pb(Zr, Ti)O_3 Thin Films by Two Step MOCVD Using Seeds"Ferroelectrics. 269. 217-222 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Shimizu: "Characterization of PZT Capacitors with Ir Electrodes Successively Prepared by MOCVD"Abstract of International Joint Conference on the Application of Ferroelectrics 2002. 133-133 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Shimizu: "Crystalline and Ferroelectric Properties of Pb(Zr, Ti)O_3 Thin Films Grown by Low-Temperature Metalorganic Chemical Vapor Deposition"Journal of Applied Physics. 41. 6686-6689 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Shimizu: "Characterization of PZT Capacitors with Ir Electrodes Prepared Solely by Low-Temperature MOCVD"Journal of Korean Physical Society. 42. S1203-S1206 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Shimizu: "Ferroelectric Properties of Pb(Zr, Ti)O_3 Thin Films Prepared by Low-Temperature MOCVD Using PbTiO_3 Seeds"Journal of the European Ceramic Society. (in press).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Shimizu: "Growth of Ferroelectric PbZr_xTi_<1-x>O_3 Thin Films by Metalorganic Chemical Vapor Deposition"Journal of Crystal Growth. 237-239. 448-454 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Shimizu: "Low Temperature Growth of Pb(Zr,Ti)O_3 Thin Films by Two Step MOCVD Using Seeds"Ferroelectrics. 269. 217-222 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Shimizu: "Characterization of PZT Capacitors with Ir Elecuiodes Successively Prepared by MOCVD"Abstract of International Joint Conference on the Application of Ferroelectrics 2002. 133-133 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Shimizu: "Crystalline and Ferroelectric Properties of Pb(Zr,Ti)O_3 Thin Films Grown by Low-Temperature Metalorganic Chemical Vapor Deposition"Japanese Journal of Applied Physics. 41. 6686-6689 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Shimizu: "Characterization of PZT Capacitors with Ir Electrodes Prepared Solely by Low-Temperature MOCVD"Journal of Korean Physical Society. 42. S1203-S1206 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Shimizu: "Ferroelectric Properties of Pb(Zr,Ti)O_3 Thin Films Prepared by Low-Temperature MOCVD Using PbTiO_3 Seeds"Journal of the European Ceramic Society. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Shimizu: "Growth of Ferroelectric PbZr_xTi_<1-x>O_3 Thin Films by Metalorganic Chemical Vapor Deposition"Journal of Crystal Growth. 237-239(P1). 448-454 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Shimizu: "Low Temperature Growth of Pb(Zr,Ti)O_3 Thin Films by Two Step MOCVD Using Seeds"Ferroelectrics. 271. 217-222 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Shimizu: "Crystalline and Ferroelectric Properties of Low-temperature Grown Pb(Zr, Ti)O_3 Thin Films by Metalorganic Chemical Vapor Deposition"Japanese Journal of Applied Physics. 41. 6686-6689 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Shimizu: "Characterization of PZT capacitors with Ir Electrodes Successfully Prepared by MOCVD"Abs. of Int. Joint Conference on the Applications of Ferroelectrics 2002. 133 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Shimizu: "Ferroelectric Properties of Pb(Zr,Ti)O_3 Thin Films Prepared by Low-Temperature MOCVD Using PbTiO_3 Seeds"Journal of European Ceramic Society. (印刷中). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Shimizu: "Characterization of PZT Capacitors with Ir Electrodes Prepared Solely by Low-Temperature MOCVD"Journal of the Korean Physical Society. (印刷中). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Shimizu: "MOCVD of Ir and IrO_2 Thin Films for PZT Capacitors"Materials Research Symposium Proceedings. 655. CC1.10-1-CC1.10.6 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.Fujisawa: "Low-Temperature Fabrication of Ir/Pb(Zr,Ti)O_3/Ir Capacitors Solely by Metalorganic Chemical vapor Deposition"Japanese Journal of Applied Physics. 40. 5531-5553 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Shimizu: "Low Temperature Growth of Pb(Zr,Ti)O_3 Thin Films by Two Step MOCVD Using Seeds"Ferroelectrics. (印刷中). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Shimizu: "Low Temperature Growth of PZT Thin Films and Its Application to Ir/PZT/Ir Capacitors"Ext. Abs. of 1st Int. Meeting on Ferroelectric Random Access Memories. FED-175. 44-45 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Okaniwa: "Low Temperature MOCVD of Pb(Zr,Ti)O_3 Thin Films Using Seeds"Ext. Abs. of 1st Int. Meeting on Ferroelectric Random Access Memories. FED-175. 91-92 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Shimizu: "Growth of Ferroelectric PbZr_xTi_<1-x>O_3 Thin Films by Metalorganic Chemical Vapor Denosition"Journal of Crystal Growth. (印刷中). (2002)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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