| Project/Area Number |
13555100
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | HOKKAIDO UNIVERSITY |
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Principal Investigator |
YOH Kanji Hokkaido Univ. Res. Cent. For Integ. Quant. Elec., Prof., 量子界面エレクトロニクス研究センター, 教授 (60220539)
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| Co-Investigator(Kenkyū-buntansha) |
HIRAKAWA Kazuhiko Tokyo Univ. Institute of Industrial Science, Prof., 生産技術研究所, 教授 (10183097)
オースチン デーヴィッド NTT, 基礎研究所, 研究主任
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| Project Period (FY) |
2001 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥12,400,000 (Direct Cost: ¥12,400,000)
Fiscal Year 2002: ¥4,900,000 (Direct Cost: ¥4,900,000)
Fiscal Year 2001: ¥7,500,000 (Direct Cost: ¥7,500,000)
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| Keywords | InAs dot / spin / indium arsenide / sipn-orbit interaction / narrow-gap semiconductor / Rashba effect / molecular beam epitaxy / spin injection / 単電子トランジスタ / 自然形成量子ドット / インジウム砒素 / 強磁性体 / 自己形成InAs量子ドット / 単電子トランジスター / 量子ドット / 擬一次元トランジスタ構造 / 帯電効果 |
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| Research Abstract |
We have proposed a heterostructure transistor embedded with InAs quantum dots which could manipulate electron states (including spin states) in the dot. The heterostructure FET with quantum dots buried in adjacent to the channel, was shown to have apotential of quantum bit ("qubit") when the spin of channel electrons are selectable by spin injection method. Realization of this idea depends on the success of Rashba effect control and spin injection. The feasibility of these important toipcs has been investiagted and summarized below.
Large spin-orbit coupling in InAs quantum well structure which was grown on InAs substrate by analyzing Shubnikov-de Haas oscillation. The obtained spin-orbit interaction coefficient was 【approximately equal】 30x10^<-12>eVm. The number was found to be much greater than that of GaAs or InGaAs on InP and almost comparable to the previous experimets where measured InAs heterostructures were associated with possible effects from interface states or possible residual strain or possible interplay of several sublevelsl.
The "spin-injection" from ferromagnetic film into semiconductors has been investigated. The crystal Fe growth on InAs by molecular beam epitaxy at low temperature of 23℃ was found to yield better spin injection characteristics. The electroluminescence of spin polarized electrons injected from ferromagnets into InAs therough Fe/InAs junction was measured, and verified spin injection with polarization of 【approximately equal】20%.
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