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Development of Efficient Si-nanocrystal-sensitized optical waveguide amplifiers

Research Project

Project/Area Number 13555108
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 電子デバイス・機器工学
Research InstitutionKobe University

Principal Investigator

HAYASHI Shinji  Kobe University, Faculty of Engineering, Professor, 工学部, 教授 (50107348)

Co-Investigator(Kenkyū-buntansha) HIBINO Yoshinori  Nippon Telegraph and Telephone Co., Photonics Labs., Senior Research Engineer, Supervisor, フォトニクス研究所, 主幹研究員
FUJII Minoru  Kobe University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (00273798)
MORIWAKI Kazuyuki  Kobe University, School of Science and Technology, Associate Professor, 大学院・自然科学研究科, 助教授 (50322194)
杉田 彰夫  日本電信電話(株), フォトニクス研究所, 主幹研究員
Project Period (FY) 2001 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥13,400,000 (Direct Cost: ¥13,400,000)
Fiscal Year 2003: ¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 2002: ¥3,800,000 (Direct Cost: ¥3,800,000)
Fiscal Year 2001: ¥7,900,000 (Direct Cost: ¥7,900,000)
KeywordsOptical amplifier / Rare earth element / Waveguide / Energy transfer / Silicon / Nanocrystal
Research Abstract

Er doped SiO_2 films containing Si nanocrystals as sensitizers have been investigated for an application to an efficient optical-amplifier. We demonstrate an optical-amplifier gain of 991cm^<-1> measured by the VSL (variable strip length) method at a wavelength of 1.55 μm using a slab waveguide. The amplification in the VSL measurement is observed within irradiation length of 60 μm in the slab waveguide. It has been found that the silicon-nanocrystals size (that is controlled by the annealing temperature) is very important to decrease the waveguide loss caused by excitons generated in the silicon nanocrystals. Core films containing silicon nanocrystals whose diameter is less than 2.7 nm show positive gain (that is amplification), because the above mentioned waveguide-loss is low. Sputtering and microfabrication processes to develop the optical amplifiers are deposition and RIE (reactive ion etching) of core patterns. A uniform core-film (4cmx8cm area) has been achieved on a 4 inch silicon wafer with a uniformity of ± 10 % in the photoluminescence intensity and the film thickness. 6 μm deep patterns in silica films have been fabricated using RIE, which can be used to fabricate the optical amplifiers. If the practical planar waveguide amplifier is realized at the wavelength of 1.55 μm used in optical telecommunication networks, a variety of novel photonic devices can be developed, because a new functionality is added to passive silica-based waveguide components.

Report

(4 results)
  • 2003 Annual Research Report   Final Research Report Summary
  • 2002 Annual Research Report
  • 2001 Annual Research Report
  • Research Products

    (30 results)

All Other

All Publications (30 results)

  • [Publications] Kei Watanabe: "Resonant excitation of Er^<3+> by the energy transfer from Si nanocrystals"Journal of Applied Physics. 90. 4761-4767 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Kimiaki Toshikiyo: "Effect of P Doping on Photoluminescence of SiGe Alloy Nanocrystals Embedded in SiO_2 Matrices : Improvement and Degradation of Luminescence Efficiency"Journal of Applied Physics. 90. 5147-5151 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Kei Watanabe: "Photoluminescence decay-dynamics of Si nanoparticles prepared by pulsed Laser ablation"Applied Surface Science. 8022. 635-638 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Kimiaki Toshikiyo: "Improvement in photoluminescence efficiency of Si_<1-x>Ge_x alloy nanocrystals embedded in SiO_2 matrices by P doping"Pysica E. 13. 1034-1037 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Kei Watanabe: "Excitation of Nd^<3+> Tm^<3+> by the energy transfer from Si nanocrystals"Pysica E. 13. 1038-042 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] 森脇 和幸: "石英系光導波路スイッチとハイブリッド素子"材料. 51. 979-982 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Kei Watanabe: "Excitation of Tm^<3+> by resonant energy transfer from Si nanocrystals"Journal of Applied Physics. 92. 4001-4006 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Kimiaki Toshikiyo: "Enhanced optical properties of Si_<1-x>Ge_x alloy nanocrystals in a planar microcavity"Journal of Applied Physics. 93. 2178-2181 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Minoru Fujii: "Below bulk-band-gap photoluminescence at room temperature from heavily P- and B-doped Si nanocrystals"Journal of Applied Physics. 94. 1990-1995 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Minoru Fujii: "Coexistence of two different energy transfer processes in SiO_2 films containing Si nanocrystals and Er"Journal of Applied Physics. 95. 272-280 (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Kei, Watanabe: "Resonant excitation of Er^<3+> by the energy transfer from Si nanocrystals"Journal of Applied Physics. 90. 4761-4767 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Kimiaki, Toshikiyo: "Effect of P Doping on Photoluminescence of SiGe Alloy Nanocrystals Embedded in SiO_2 Matrices : Improvement and Degradation of Luminescence Efficiency"Journal of Applied Physics. 90. 5047-5151 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Kei, Watanabe: "Photoluminescence decay-dynamics of Si nanoparticles prepared by pulsed laser ablation"Applied Surface Science. 8022. 635-638 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Kimiaki, Toshikiyo: "Improvement in photoluminescence efficiency of Si_<1-X>Ge_X alloy nanocrystals embedded in SiO_2 matrices by P doping"Pysica E. 13. 1034-1037 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Kei, Watanabe: "Excitation of Nd^<3+> and Tm^<3+> by the energy transfer from Si nanocrystals"Pysica E. 13. 1038-1042 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Kazuyuki, Moriwaki: "Optical waveguide Switches and Hybrid Devices by Silica-Based Material (In Japanese)"Zairyo. 51. 979-982 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Kei, Watanabe: "Excitation of Tm^<3+> by resonant energy transfer from Si nanocrystals"Journal of Applied Physics. 92. 4001-4006 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Kimiaki, Toshikiyo: "Enhanced optical properties of Si_<1-X>Ge_X alloy nanocrystals in a planar microcavity"Journal of Applied Physics. 93. 2178-2181 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Minoru, Fujii: "Below bulk-band-gap photoluminescence at room temperature from heavily P-and B-doped Si nanocrystals"Journal of Applied Physics. 94. 1990-1995 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Minoru, Fujii: "Coexistence of two different energy transfer processes in SiO_2 films containing Si nanocrystals and Er"Journal of Applied Physics. 95. 272-280 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Minoru Fujii: "Below bulk-band-gap photoluminescence at room temperature from heavily P- and B-doped Si nanocrystals"J.Appl.Phys.. Vol.94,No.3. 1990-1995 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Minoru Fujii: "Coexistence of two different energy transfer processes in SiO_2 films containing Si nanocrystals and Er"J.Appl.Phys.. Vol.95 No.1. 272-280 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Kei Watanabe: "Photoluminescence decay-dynamics of Si nanoparticles prepared by pulsed laser ablation"Applied Surface Science. Vol.8022. 1-4 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Kimiaki Toshikiyo: "Improvement in photoluminescence efficiency of Si_<1-x>Ge_x alloy nanocrystals embedded in SiO_2 matrices by P doping"Pysica E. Vol.13,. 1034-1037 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Kei Watanabe: "Excitation of Nd^<3+> and Tm^<3+> by the energy transfer from Si nanocrystals"Pysica E. Vol.13,. 1038-1042 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] 森脇 和幸: "石英系光導波路スイッチとハイブリッド素子"材料. 第51巻. 979-982 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Kei Watanabe: "Excitation of Tm3+ by resonant energy transfer from Si nanocrystals"J. Appl. Phys.. Vol.92, No.7. 4001-4006 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Kimiaki Toshikiyo: "Enhanced optical properties of Si_<1-x>Ge_x alloy nanocrystals in a planar microcavity"J. Appl. Phys.. Vol.93, No.4. 2178-2181 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] Kei Watanabe: "Resonant excitation of Er^<3+> by the energy transfer from Si nanocrystals"Journal of Applied Physics. Vol.90, No.9. 4761-4767 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Kimiaki Toshikiyo: "Effects of P doping on photoluminescence of Si_<1-x>Ge_x alloy nanocrystals embedded in SiO_2 matrices : Improvement and degradation of photoluminescence efficiency"Journal of Applied Physics. Vol.90, No.10. 5147-5151 (2001)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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