| Project/Area Number |
13555192
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Material processing/treatments
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| Research Institution | Tohoku University |
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Principal Investigator |
JU Yang Tohoku University, Graduate School of Engineering, Research Associate, 大学院・工学研究科, 助手 (60312609)
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| Co-Investigator(Kenkyū-buntansha) |
OGURA Yukio Tohoku University, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (80091700)
SAKA Masumi Tohoku University, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (20158918)
SASAGAWA Kazuhiko Hirosaki University, Faculty of Science and Technology, Associate Professor, 理工学部, 助教授 (50250676)
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| Project Period (FY) |
2001 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥11,700,000 (Direct Cost: ¥11,700,000)
Fiscal Year 2002: ¥4,100,000 (Direct Cost: ¥4,100,000)
Fiscal Year 2001: ¥7,600,000 (Direct Cost: ¥7,600,000)
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| Keywords | Microwave / Laser / Silicon Wafer / Conductivity / Electro-optic effect / Quantitative Measurement / Contactless / High Resolution |
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| Research Abstract |
1.Development of a microwave-laser measurement system
A measurement system for detecting the phase variation of a laser light occurring in an electro-optic crystal was developed. The phase variation is induced by the changed index of refraction when a microwave beam is applied to the electro-optic crystal. The variation of the polarized light of a femtosecond pulse laser generated due to the electro-optic effect was successfully detected; thereby the sampling of a high frequency microwave (millimeter-wave) becomes possible.
2. Contactless measurement of conductivity of silicon wafer independent of the thickness
A method for quantitative measurement of electrical conductively of semiconductor wafers in a contactless fashion by using millimeter waves was developed, A high-frequency millimeter wave was used in order to ensure the transmitted millimeter wave attenuated rapidly inside the wafer so that the reflection from the bottom surface of the wafer can be neglected. Thereby it becomes possible only to consider the reflection on the top surface of the wafer and thus the millimeter wave response signal is not affected by the thickness of the wafer. In addition, in the experiment, both the amplitude and phase of the reflection coefficient are measured, and by using these two parameters it is possible to determine the conductivity independent of the permittivity of the semiconductor wafers.
3. Measurement of conductivity distribution of silicon wafer with high spatial resolution and sensitivity
Distribution of the conductivity of silicon wafer was measured by microwave imaging. An open-ended coaxial line sensor was used to increase the spatial resolution and the sensitivity of the measurement. The relationship of the amplitude of the reflection coefficient and the conductivity of a wafer was found to be linear. The demonstrated method could be used to determine conductivity distribution in the process of wafer manufacturing or during device fabrication.
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