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Thermodynamic interactive database for vapor phase epitaxy using internet

Research Project

Project/Area Number 13650004
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionTokyo University of Agriculture and Technology

Principal Investigator

KOUKITU Akinori  Tokyo University of Agriculture and Technology, Faculty of Technology, Professor, 工学部, 教授 (10111626)

Co-Investigator(Kenkyū-buntansha) HAGIWARA Yoichi  General Information Media Center, Associate professor, 総合情報メディアセンター, 助教授 (40218392)
KUMAGAI Yoshinao  Faculty of Technology, Lecture, 工学部, 講師 (20313306)
Project Period (FY) 2001 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥3,500,000 (Direct Cost: ¥3,500,000)
Fiscal Year 2002: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 2001: ¥2,500,000 (Direct Cost: ¥2,500,000)
KeywordsInternet / Data base using calculation system / Web / Thermodynamic analysis / Vapor Phase Epitaxy / Compound Semiconductor / 気相エピタキシャル成長 / 窒化物 / データーベース / 光デバイス / 電子デバイス
Research Abstract

Vapor phase epitaxy (VPE) including metalorganic vapor phase epitaxy (MOVPE) is a very important method for high-functional opto- and electronic- devices. VPE provides high quality epitaxial layers from vapor at low temperature. Group III nitrides and their alloys are promising materials for applications to short-wavelength light emitting devices. In particular, fabrication of InGaN-based heterostructures has been extensively studied for violet/blue laser diodes (LDs) by a large number of researchers. Especially, MOVPE is used generally for the epitaxial growth of these structures.
In this project, we have investigated a new thermodynamic analysis system for vapor phase epitaxy of the group III nitrides, GaN, InN, AIN, InGaN, AlGaN and AlInN, and the other III-V compound semiconductors such as InGaAsP, InAsAs, InGaP because the thermodynamic analysis of epitaxial growth system provides usefull information on the growth conditions. The new thermodynamic analysis system which we set up informs 〓vorable conditions for the growth through the internet web to any researchers who want to find out the best conditions.

Report

(3 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • Research Products

    (23 results)

All Other

All Publications (23 results)

  • [Publications] Yoshinao KUMAGAI: "Thick and high-quality GaN growth on GaAs(111) substrates for preparation of freestanding GaN"J.Ciyst.Growth. 246. 215-222 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Akinori KOUKITU: "Surface polarity dependence of decomposition and growth of GaN studied by in situ gravimetric monitoring"J.Cryst.Growth. 246. 230-236 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Akinori KOUKITU: "Influence of Temperature Ramping Rate on Thick GaN Growth on GaAs(111)A Surfaces"Phys.Stat.Sol.(c). 0. 166-169 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Hisashi MURAKAMI: "Influence of substrate polarity on the low-temperature GaN buffer layer growth on GaAs(111)A and (111)B substrates"J.Ciyst.Growth. 247. 245-250 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Yuriko MATSUO: "Theoretical investigation of arsenic desorption from GaAs(001) surfaces under an atmosphere of hydrogen"Jpn.J.Appl.Phys.. 42. 2578-2581 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Takehiro HASEGAWA: "A quadratic convergence method for MOVPE thermodynamic analysis"J.Cryst.Growth. 237-239. 1603-1609 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Yoshinao KUMAGAI: "Thick and high-quality GaN growth on GaAs(111) substrates for preparation of freestanding GaN"J. Cryst. Growth. 243. 215-222 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Akinori KOUKITU: "Surface polarity dependence of decomposition and growth of GaN studied by in situ gravimetric monitoring"J. Cryst. Growth. 246. 230-236 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Akinori KOUKITU: "Influence of Temperature Ramping Rate on Thick GaN Growth on GaAs (111 )A Surfaces"Phys. Stat. Sol. (c). 0. 166-169 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Hisashi MURAKAMI: "Influence of substrate polarity on the low-temperature GaN buffer layer growth on GaAs(111)A and (111)B substrates"J. Cryst. Growth. 247. 245-250 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Yuriko MATSUO: "Theoretical investigation of arsenic desorption from GaAs(001) surfaces under an atmosphere of hydrogen"Jpn. J. Appl. Phys.. 42. 2578-2581 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Takehiro HASEGAWA: "A quadratic convergence method for MOVPE thermodynamic analysis"J. Cryst. Growth. 237-239. 1603-1609 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Yoshihiro KANGAWA: "Influence of lattice constraint from InN and GaN substrate on relationship between solid composition of In_xGa_<1-x>N film and input mole ratio during molecular bean epitaxy"Jpn. J. Appl. Phys.. 42. 95-98 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Yoshihiro KANGAWA: "Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE"Appl. Surf. Sci.. in press. (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Akinori KOUKITU: "Surface polarity dependence of decomposition and growth of GaN studied by in situ gravimetric monitoring"J.Cryst.Growth. 246. 230-236 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Yoshihiro KANGAWA: "Influence of lattice constraint from InN and GaN substrate on relationship between solid composition of In_xGa_<1-x>N film and input mole ratio during molecular bean epitaxy"Jpn.J.Appl.Phys.. 42. L95-L98 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] Yoshihiro KANGAWA: "Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE"Appl.Surf.Sci.. (印刷中). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] Takehiro HASEGAWA: "A quadratic convergence method for MOVPE thermodynamic analysis"J.Crysta.Growth. 237-239. 1603-1609 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] A.Koukitu: "Thermodynamics on halide vapor-phase epitaxy of InN using Incl and InCl_3"J.Cryseal Growth. 222. 118-124 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] A.Koukitu: "Ab initio calculations os GaN Initial growth processes on GaAs(111)A and GaAs(111)B Sourfaces"phys. stat. sol. 188. 553-556 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] A.Koukitu: "Thermodynamics on tri-halide vapor-phase epitaxy of GaN and In_x Ga_<1x>N using CaCl_3 and InCl_3"J.Cryseal Groweh. 231. 57-67 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] A.Koukitu: "Comparison of GaN Buffer Layers grown on GaAs (111)A and (111)B Surfaces"phys. stat. sol. 188. 549-552 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] A.Koukitu: "Influence of Polarity on surface Reaction between GaN{0001} and Hydrogen"phys. stat. sol. 228. 537-541 (2001)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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