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Fundamental Study of GaN-on-Si Hetero-Epitaxial Substrate for Earth Environmental Preservation

Research Project

Project/Area Number 13650014
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionYamaguchi University

Principal Investigator

OHSHIMA Naoki  Yamaguchi University, Engineering, Assistant Professor, 工学部, 講師 (70252319)

Project Period (FY) 2001 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2002: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 2001: ¥2,200,000 (Direct Cost: ¥2,200,000)
KeywordsGaN / γ-Al_2O_3 / Si / NH_3 / Molecular Beam Epitaxy / RHEED / RHEED
Research Abstract

The GaN and compounds of AlGaN are only promising materials for high-power devices and opto-electronic devices in the ultra violet-wavelength region. Many GaN-based opto-electronic devices are demonstrated on sapphire and SiC substrate. On the other hand, the GaN-based devices on silicon substrate have not been performed regardless of many advantages of Si such as high quality, low cost, controllability of the conductivity and effectiveness for the application combined with Si-ULSI technology. It is hard to obtain high quality GaN epilayer on Si because it is easy to occur the interaction at the hetero-interface between GaN layer and Si substrate. Therfore, it has been expected to grow a device-quality GaN epilayer on Si using an appropriate buffer layer.
In the present work, we have investigated the growth behavior of GaN epilayer on Si(111) and Si(100)substrates coverd with 0.6μm thick γ-Al_2O_3 epitaxial layer as an intermediate layer by NH3 gas source molecular beam epitaxy with in-situ reflection high energy electron diffraction system. It is found that the nitridation of the surface of the Si substrate is effectively suppressed with γ-Al_2O_3layer. The GaN under cubic phase was epitaxially re-grown on γ-Al_2O_3Si(100) substrate and hexagonal GaN layer with flat surface on γ-Al_2O_3Si(100)

Report

(3 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • Research Products

    (6 results)

All Other

All Publications (6 results)

  • [Publications] Naoki Ohshima, et al.: "Epitaxial Growth of GaN by Gas Source Molecular Beam Epitaxy Using NH_3"Transaction of the Materials Research Society of Japan. 27. 475-478 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Naoki Ohshima, et al.: "Growth Process of GaN on Sapphire at High Growth Temperature by Gas Source Molecular Beam Epitaxy"Transaction of the Materials Research Society of Japan. (発表予定). (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] N. Ohshima, K. Shibata, Y. Orihashi, A. Sugihara: "Growth Process of GaN on Sapphire at High Growth Temperature by Gas Source Molecular Beam Epitaxy"Transaction of the Materials Research Society of Japan.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] N. Ohshima. S. Okamoto, K. Shibata, Y. Orihashi, S. Kageyama, M. Ishida, T. Yazawa, G Camargo: "Epitaxial Growth of GaN by Gas Source Molecular Beam Epitaxy Using NH_3"Trans. Materials Research Society of Japan. 27(2). 475-478 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Naoki Ohshima, et al.: "Epitaxial Growth of GaN by Gas Source Molecular Beam Epitaxy Using NH_3"Transaction of the Materials Research Society of Japan. 27. 475-478 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Naoki Ohshirna, et al.: "Growth Process of GaN on Sapphire at High Growth Temperature by Gas Source Molecular Beam Epitaxy"Transaction of the Materials Research Society of Japan. (発表予定). (2002)

    • Related Report
      2002 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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