The growth of environmental semiconductor β-FeSi_2 films for light emitting devices and photo-detection devices
| Project/Area Number |
13650020
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Meiji University |
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Principal Investigator |
UEKUSA Shinitiro Meiji University, 理工学部, 教授 (10061970)
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| Project Period (FY) |
2001 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2002: ¥800,000 (Direct Cost: ¥800,000)
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| Keywords | Environmental semiconductor / Nonpoisonous / Solar cell / Luminescence and photovoltaic component / OEIC / Silicon base / β-FeSi_2 / Pulsed Laser Deposition / レーザーアブレーション |
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| Research Abstract |
Orthorhombic the β-FeSi_2 is composed of nontoxic elements, which exist in great abundance on earth. The use of the β-FeSi_2 is expected in applications of thermoelectric devices, light emitting devices and photovoltaic cells. In this study, we attempted to grow the β-FeSi_2 thin film on Si substrate, using a pulsed laser deposition method (PLD), for investigating optical properties.
(1)The β-FeSi_2 thin films were not grown at room temperature and substrate temperature over 400 degrees made the β-FeSi_2 monocrystalline structure.
(2)The sample prepared on Si(111) substrate was a monocrystalline structure since only (202) or (220) signals of β-FeSi_2 were observed.
(3)Composition of produced β-FeSi_2 was Fe:Si=30:70. So as-deposition β-FeSi_2 was Si-rich.
(4)Iron was spread into Si substrate and the amount of diffusion was large at room temperature and 500 degrees.
(5)β-FeSi_2/Si interface prepared by 400 degrees was an ideal one-side step junction.
(6)When we used the annealing above 20 hours, the FWHM of β-FeSi_2 thin film was decreased about 50% and the crystalline recovery was observed. And β-FeSi_2 composition ratio was close to stoichiometry. And the band gap was increased.
(7)Iron and a lattice defect were made impurity level and were considered to operate as a killer center of luminescence.
(8)We found that the PL peaks from the β-FeSi_2 thin films on a Si substrate appear at 0.807eV for the samples annealed at 900℃ for 40h. The PL signal from the β-FeSi_2 thin film was observed using PLD for the first time to the best of our knowledge. And the PL peak of as-deposited sample is considered that Si defective peak ; and Si complex peak appeared.
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Report
(3 results)
Research Products
(6 results)
