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Preparation of surface controlled Si nanocrystal by pulsed laser ablation and observation of its optical properties

Research Project

Project/Area Number 13650021
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionKonan University

Principal Investigator

UMEZU Ikurou  Konan University, Faculty of Science and Engineering, Associate professor, 理工学部, 助教授 (30203582)

Co-Investigator(Kenkyū-buntansha) SUGIMURA Akira  Konan University, Faculty of Science and Engineering, Professor, 理工学部, 教授 (30278791)
INADA Mitsuru  Konan University, High Technology Research Center, Researcher, ハイテクリサーチセンター, 博士研究員 (00330407)
吉田 岳人  松下電産, 主任技師(研究員)
山田 由佳  松下電産, 技師(研究員)
Project Period (FY) 2001 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥3,200,000 (Direct Cost: ¥3,200,000)
Fiscal Year 2003: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2002: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2001: ¥1,600,000 (Direct Cost: ¥1,600,000)
KeywordsLaser ablation / Silicon / Nano-crystal / Surface / Optical Gap / Luminescence / Hydrogenation / Nitridation / 表面・界面
Research Abstract

The aim of this research is to prepare surface controlled Si nanocrystal and to reveal effects of the surface on the optical properties. The hydrogenated Si nanocrystal was prepared by pulsed laser ablation in hydrogen gas and its surface was treated by nitrogen radical species produced by helicon wave radical gun. We confirmed that the Si nanocrystal was nitrogenated and hydrogen content in Si nanocrystal decreased by nitrogen plasma treatment. This indicates that Si-H bond on the surface has changed to Si-N bond by the nitrogen plasma treatment The optical bandgap energy and photluminescence intensity of Si nanocrystal decreased by the nitrogen treatment The decrease in the photoluminescence intensity is considered to be due to decrease in the hydrogen content and increase in dangling bond. The origin of the change in the optical bandgap was considered by molecular orbital calculation. The Si10 or Si53 cluster was assumed to calculate transition energy. We compared transition energy of surface passivated cluster by hydrogen and nitrogen. The transition energy of nitrogen passivated nanocrystal was smaller than that of hydrogen passivated one. This result qualitatively corresponds to the experimental result This indicates that surface condition such as electronegativity of the surface atom affect to electronic properties of nanocrystal.
The effect of surface oxidation was observed by measuring optical properties during growth of native oxide. The optical band gap energy increased with oxidation. This is due to the quantum confinement effect, which arise from reduction of the size of the nanocrystal. We found that there are three individual PL peaks in oxidized sample by time resolved photoluminescence. This means that controlling oxidation can control PL wavelength.
We succeeded to prepare surface controlled Si nanocrystal and clarified correlation between surface condition and optical properties.

Report

(4 results)
  • 2003 Annual Research Report   Final Research Report Summary
  • 2002 Annual Research Report
  • 2001 Annual Research Report
  • Research Products

    (72 results)

All Other

All Publications (72 results)

  • [Publications] I.Umezu, K.Yoshida, M.Inada, A.Sugimura: "Photoluminescence from Nanoscale Si in a-SiOx matrix"Mat.Res.Soc Symp.Proc.. 638. F5.19.1-F5.19.6 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Inada, T.Fujishima, I.Umezu, A.Sugimura, S.Yamada: "Conduction-type control of Ge films grown on (NH4)2S-treated GaAs by molecular beam epitaxy"Journal of Crystal Growth. 227-228. 791-795 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Inada, K.Ohnishi, I.Umezu, P.O.Vaccaro, A.Sugimura: "Many body effect in photo-conductivity in InAs/GaAs self assembled quantum dots"Mat.Res.Soc.Symp.Proc.. 642. J3.3.2-J3.3.6 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, G.Yamazaki, T.Yamaguchi, A.Sugimura, T.Makino, Y.Yamada, N.Suzuki, T.Yoshida: "Effects of annealing on luminescence properties of si nanocrystallites prepared by pulsed laser ablation in inert gas"Materials Science & Engineering C. 15/1-2. 129-131 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] A.Sugimura, K.Ohnishi, I.Tadamasa, I.Umezu: "Effects of inter-dot electronic coupling on laser gain in InAs/GaAs quantum dot ensemble"Mat.Res.Soc.Symp.Proc.. 642. J5.5.1-J5.5.6 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, K.Yoshida, N.Sakamoto, T.Murota, Y.Takashima, M.Inada, A.Sugimura: "Photoluminescence Properties of Amorphous Silicon-based Oxygen and Hydrogen Alloys"J.Appl.Phys.. 91. 2009-2014 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, K.Kohno, T.Yamaguchi, A.Sugimura, M.Inada: "Deposition of silicon nitride films by pulsed laser ablation of Si target in nitrogen gas"J.Vac.Sci. and technol.A. 20. 30-32 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] K.Yoshida, I.Umezu, N.Sakamoto, M.Inada, A.Sugimura: "Effect of Structure on Radiative Recombination Process in Amorphous Silicon Suboxide Prepared by RF Sputtering"Journal of applied physics. 92. 5936-5941 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, Takashi Yoshida, K.Matsumoto, A.Sugimura, M.Inada: "Nanoscale anodization of an amorphous silicon surface with an atomic force microscope"Appl.Phys.Lett.. 81. 1492-1493 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, T.Yamaguchi, K.Kohno, M.Inada, A.Sugimura: "Preparation of SiNx film by pulsed laser ablation in nitrogen gas ambient"Appl.Surf.Sci.. 197-198C. 314-316 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, K.Kohno, K.Aoki, Y.Kohama.A.Sugimura, M.Inada: "Effects of Argon and hydrogen plasmas on the surface of silicon"Vacuum. 66/3-4. 453-456 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Inada, H.Nakagawa, I.Umezu, A.Sugimura: "Effects of hydrogen on Si nanoparticles formed by pulse laser ablation"Applied surface science. 197-198. 666-669 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] K.Matsumoto, H.nakagawa, M.Inada, I.Umezu, A.Sugimura: "Study of silicon nanocrystal prepared by pulsed laser ablation in H2 gas"Mem.Konan Univ., Sci.Ser.. 49. 17-23 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, T.Yoshida, K.Matsumoto, M.Inada, A.Sugimura: "Nano-oxidation of an amorphous silicon surface with an atomic force microscope"J.Noncryst.solids. 299-302. 1090-1094 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, K.Mandai, R.Koizumi, M.Inada, A.Sugimura, Y.Sunaga, T.Ishii, Y.Nagasaki: "Optical properties of CdS quantum dot covered by novel polymer chains"Institute of Physics Conference Series. 171. H202,1-H202,5 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Inada, I.Umezu, A.Sugimura: "Effect of gas pressure on reactive pulsed laser ablation of a silicon target"J.Vac.Sci.Technol.A. 21. 84-86 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, M.Inada, K.Kohno, T.Yamaguchi, T.Makino, A.Sugimura: "Reaction between nitrogen gas and silicon species during pulse laser ablation"J.Vac.Sci.Technol.A. 21. 1680-1682 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Inada, S.Sato, I.Umezu, P.O.Vaccaro, S.Yamada, A.Sugimura: "Observation of inter-dot electron transport via spin-split states in InAs quantum dots"Institute of Physics Conference Series. 171. H188,1-H188,5 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Inada, H.Nakagawa, I.Umezu, A.Sugimura: "Effects of hydroganation on photoluminescence of Si nanoparticles formed by pulsed laser ablation"Materials Science & Engineering B. 101. 283-285 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Makino, N.Suzuki, Y.Yamada, T.Yoshida, I.Umezu, A.Sugimura: "Mechanizms of Visible Photoluminescence from Size-Controlled Silicon Nanoparticles"Mat.Res.Soc.Symp.Proc.. 737. 265-270 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, M.Inada, H.Nakagawa, K.Matsumoto, A.Sugimura: "Correlation between structure and nonradiative recombination process in silicon nanocrystallites"Institute of Physics Conference Series. 171. D173,1-D173,5 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, K.Mandai, R.Koizumi, M.Inada, A.Sugimura, Y.Sunaga, T.Ishii, Y.Nagasaki: "Optical Properties of CdS Nanocrystal Covered by Polymer Chains on the Surface"Micro Electronic Engineering. 66. 53-58 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Inada, I.Umezu, P.O.Vaccaro, S.Yamada, A.Sugimura: "Optical and transport studies in coupled InAs quantum dots embedded in GaAs"Physica E. 21. 317-321 (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, R.Koizumi, A.Sugimoto, M.Inada, T.Makino, A.Sugimura, Y.Sunaga, T.Ishii.Y.Nagasaki: "Recombination process of CdS quantum dot covered by novel Polymer Chains"Physica E. 21. 1102-1105 (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Inada, I.Umezu, P.O.Vaccaro, S.Yamada, A.Sugimura: "Inter-dot electron transport in coupled InAs quantum dots under magnetic field"Semicond.Sci.Technol. 19. S54-S55 (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, K.Matsumoto, M.Inada, T.Makino, A.Sugimura: "Correlation between surface oxide and photoluminescence properties of Si nanoparticles prepared by pulsed laser ablation"Applied Physics A. (in press). (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Makino, M.Inada, K.Yoshida, I.Umezu, A.Sugimura: "Structural and optical properties of silicon nanoparticles prepared by pulsed laser ablation in hydrogen backgrond gas"Applied Physics A. (in press). (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, K.Yoshida, M.Inada, A.Sugimura: "Photoluminescence from Nanoscale Si in a-SiOx matrix"Mat.Res.Soc SymProc.. 638. F5.19.1-F5.19.6 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Inada, T.Fujishima, I.Umezu, A.Sugimura, S.Yamada: "Conduction-type control of Ge films grown on(NH4)2S-treated GaAs by molecular beam epitaxy"Journal of Crystal Growth. 227-228. 791-795 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Inada, K.Ohnishi, I.Umezu, O.Vaccaro, A.Sugimura: "Many body effect in photo-conductivity in InAs/GaAs self assembled quantum dots"Mat.Res.Soc SymProc.. 642. J3.3.2-J3.3.6 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, G.Yamazaki, T.Yamaguchi, A.Sugimura, T.Makino, Y.Yamada, N.Suzuki, T.Yoshioa: "Effects of annealing on luminescence properties of si nanocrystallites prepared by pulsed laser ablation in inert gas"Materials Science & Engineering C. 15/1-2. 129-131 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] A.Sugimura, K.Ohnishi, I.Tadamasa, I.Umezu: "Effects of inter-dot electronic coupling on laser gain in InAs/GaAs quantum dot ensemble"Mat.Res.Soc SymProc.. 642. J5.5.1-J5.5.6 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, K.-i.Yoshida, N.Sakamoto, T.Murota, Y.Takashima, M.Inada, A.Sugimura: "Photoluminescence Properties of Amorphous Silicon-based Oxygen and Hydrogen Alloys"J.Appl.Phys.. 91. 2009-2014 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, K.Kohno, T.Yamaguchi, A.Sugimura, M.Inada: "Deposition of silicon nitride films by pulsed laser ablation of Si target in nitrogen gas"J.Vac.Sci.and technol.A. 20. 30-32 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] K.Yoshida, I.Umezu, N.Sakamoto, M.Inada, A.Sugimura: "Effect of Structure on Radiative Recombination Process in Amorphous Silicon Suboxide Prepared by RF Sputtering"Journal of applied physics. 92. 5936-5941 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, Takashi Yoshida, K.Matsumoto, A.Sugimura, M.Inada: "Nanoscale anodization of an amorphous silicon surface with an atomic force microscope"Appl.Phys.Lett.. 81. 1492-1493 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, T.Yamaguchi, K.Kohno, M.Inada, A.Sugimura: "Preparation of SiNx film by pulsed laser ablation in nitrogen gas ambient"Appl.Surf.Sci.. 197-198C. 314-316 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, K.Kohno, K.Aoki, Y.Kohama, A.Sugimura, M.Inada: "Effects of Argon and hydrogen plasmas on the surface of silicon"Vacuum. 66/3-4. 453-456 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Inada, H.Nakagawa, I.Umezu, A.Sugimura: "Effects of hydrogen on Si nanoparticles formed by pulsed laser ablation"Applied surface science. 197-198. 666-669 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] K.Matsumoto, H.nakagawa, M.Inada, I.Umezu, A.Sugimura: "Study of silicon nanocrystal prepared by pulsed laser ablation in H2 gas"Mem.Konan Univ., Sci.Ser.. 49. 17-23 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, T.Yoshida, K.Matsumoto, M.Inada, A.Sugimura: "Nano-oxidation of an amorphous silicon surface with an atomic force microscope"J.Noncryst.solids. 299-302. 1090-1094 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, K.Mandai 1, R.Koizumi 1, M.Inada, A.Sugimura, Y.Sunaga, T.Ishii, Y.Nagasaki: "Optical properties of CdS quantum dot covered by novel polymer chains"Institute of Physics Conference Series. 171 H202. 1-5

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Inada, I.Umezu, A.Sugimura: "Effect of gas pressure on reactive pulsed laser ablation of a silicon target"J.Vac.Sci.technol.A. 21. 84-86 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, M.Inada, K.Kohno, T.Yamaguchi, T.Makino, A.Sugimura: "Reaction between nitrogen gas and silicon species during pulsed laser ablation"J.Vac.Sci.technol.A. (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Inada, S.Sato, I.Umezu, O.Vaccaro, S.Yamada, A.Sugimura: "Observation of inter-dot electron transport via spin-split states in InAs quantum dots"Institute of Physics Conference Series. 171 H188. 1-5

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Inada, H.Nakagawa, I.Umezu, A.Sugimura: "Effects of hydroganation on photoluminescence of Si nanoparticles formed by pulsed laser ablation"Materials Science & Engineering B. 101. 283-285 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Makino, N.Suzuki, Y.Yamada, T.Yoshida, I.Umezu, A.Sugimura: "Mechanizms of Visible Photoluminescence from Size-Controlled Silicon Nanoparticles"Mat.Res.Soc SymProc.. 737. 265-270 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, M.Inada, H.Nakagawa, K.Matsumoto, A.Sugimura: "Correlation between structure and nonradiative recombination process in silicon nanocrystallites"Institute of Physics Conference Series. 171 D173. 1-5

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, K.Mandai, R.Koizumi, M.Inada, A.Sugimura, Y.Sunaga, T.Ishii, Y.Nagasaki: "Optical Properties of CdS Nanocrystal Covered by Polymer Chains on the Surface"Micro Electronic Engineering. 66. 53-58 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Inada, I.Umezu, O.Vaccaro, S.Yamada, A.Sugimura: "Optical and transport studies in coupled InAs quantum dots embedded in GaAs"Physica E. 21. 317-321 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, R.Koizumi, A.Sugimoto, M.Inada, T.Makino, A.Sugimura, Y.Sunaga, T.Ishii, Y.Nagasaki: "Recombination process of CdS quantum dot covered by novel Polymer Chains"Physica E. 21. 1102-1105 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Inada, I.Umezu, O.Vaccaro, S.Yamada, A.Sugimura: "Inter-dot electron transport in coupled InAs quantum dots under magnetic field"Semicond.Sci.Technol.. 19. S54-S55 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, K.Matsumoto, M.Inada, T.Makino, A.Sugimura: "Correlation between surface oxide and photoluminescence properties of Si nanoparticles prepared by pulsed laser ablation"Applied Physics A. (in press). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Makino, M.Inada 1, K.Yoshida, I.Umezu, A.Sugimura 1: "Structural and optical properties of silicon nanoparticles prepared by pulsed laser ablation in hydrogen backgrond gas"Applied Physics A. (in press). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Umezu, M.Inada, K.Kohno, T.Yamaguchi, T.Makino, A.Sugimura: "Reaction between nitrogen gas and silicon species during pulsed laser ablation"J.Vac.Sci.Technol.A. 21. 1680-1682 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] M.Inada, H.Nakagawa, I.Umezu, A.Sugimura: "Effects of hydroganation on photoluminescence of Si nanoparticles formed by pulsed laser ablation"Materials Science & Engineering B. 101. 283-285 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Makino, N.Suzuki, Y.Yamada, T.Yoshida, I.Umezu, A.Sugimura: "Mechanizms of Visible Photoluminescence from Size-Controlled Silicon Nanoparticles"Mat.Res.Soc.Symp.Proc.. 737. 265-270 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] M.Inada, I.Umezu, A.Sugimura: "Effect of gas pressure on reactive pulsed laser ablation of a silicon target"J.Vac.Sci.Technol.A 21. 84-86 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] I.Umezu, M.Inada, H.Nakagawa, K.Matsumoto, A.Sugimura: "Correlation between structure and nonradiative recombination process in silicon nanocrystallites"Institute of Physics Conference Series Number. 171. D173 1-D173 5 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] I.Umezu, K.Mandai, R.Koizumi, M.Inada, A.Sugimura, Y.Sunaga, T.Ishii, Y.Nagasaki: "Optical Properties of CdS Nanocrystal Covered by Polymer Chains on the Surface"MicroElectronic Engineering. 66. 55-58 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] I.Umezu, K.Kohno, K.Aoki, Y.Kohama, A.Sugimura, M.Inada: "Effects of Argon and hydrogen plasmas on the surface of silicon"Vacuum. 66/3-4. 453-456 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] I.Umezu, T.Yamaguchi, K.Kohno, M.Inada, A.Sugimura: "Preparation of SiNx film by pulsed laser ablation in nitrogen gas ambient"Appl. Surf. Sci.. 197-198C. 314-316 (2002)

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      2002 Annual Research Report
  • [Publications] I.Umezu, K.Yoshida, N.Sakamoto, T.Murota, Y.Takashima, M.Inada, A.Sugimura: "Photoluminescence Properties of Amorphous Silicon-based Oxygen and Hydrogen Alloys"J Appl. Phys.. 91. 2009-2014 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] I.Umezu, K.Kohno, T.Yamaguchi, A.Sugimura, M.Inada: "Deposition of silicon nitride films by pulsed laser ablation of Si target in nitrogen gas"J. Vac. Sci. and technol.. A20. 30-32 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] I.Umezu, M.Inada, H.Nakagawa, K.Matsumoto, A.Sugimura: "Correlation between structure and nonradiative recombination process in silicon nanocrystallites"Proceedings of The 26 th International Conference on Physics of Semiconductors. (to be published). 2002

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      2002 Annual Research Report
  • [Publications] K.Yoshida, I.Umezu, N.Sakamoto, M.Inada, A.Sugimura: "Effect of Structure on Radiative Recombination Process in Amorphous Silicon Suboxide Prepared by RF Sputtering"Journal of applied physics. 92. 5936-5941 (2002)

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      2002 Annual Research Report
  • [Publications] I.Umezu, K.Yoshida, M.Inada, A.Sugimura: "Photoluminescence from Nanoscale Si in a-SiOx matrix"Mat.Res.Soc Symp.Proc.. 638. F5.19.1-F5.19.6 (2001)

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      2001 Annual Research Report
  • [Publications] M.Inada, K.Ohnishi, I.Umezu P.O.Vaccaro, A.Sugimura: "Many body effect in photo-conductivity in InAs/GaAs self assembled quantum dots"Mat.Res.Soc.Symp.Proc.. 642. J3.3.2-J3.3.6 (2001)

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      2001 Annual Research Report
  • [Publications] A.Sugimura, K.Ohnishi, I.Tadamasa, I.Umezu: "Effects of inter-dot electronic coupling on laser gain in InAs/GaAs quantum dot ensemble"Mat.Res.Soc.Symp.Proc.. 642. J5.5.1-J5.5.6 (2001)

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      2001 Annual Research Report
  • [Publications] A.Sugimura, 他6名: "Effects of annealing on luminescence properties of si nanocrystallites prepared by pulsed laser ablation in inert gas"Materials Science & Engineering C. 15/1-2. 129-131 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] I.Umezu, K.Kohno, T.Ymaguchi, A.Sugimura, M.Inada: "Deposition of silicon nitride films by pulsed laser ablation of Si target in nitrogen gas"J.Vac.Sci.and technol.A. 20. 30-32 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] I.Umezu, M.Inada, A.Sugimura他4名: "Photoluminescence Properties of Amorphous Silicon-based Oxygen and Hydrogen Alloys"J.Appl.Phys.. 91. 2009-2014 (2002)

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      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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