| Project/Area Number |
13650047
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | Kanazawa Institute of Technology |
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Principal Investigator |
MINAMI Tadatsugu Kanazawa Institute of Technology, Electrical Engineering, Professor, 工学部, 教授 (70113032)
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| Co-Investigator(Kenkyū-buntansha) |
MIYATA Toshihiro Kanazawa Institute of Technology, Electrical Engineering, Associate Professor, 工学部, 助教授 (30257448)
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| Project Period (FY) |
2001 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥4,000,000 (Direct Cost: ¥4,000,000)
Fiscal Year 2002: ¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 2001: ¥2,200,000 (Direct Cost: ¥2,200,000)
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| Keywords | thin film / EL / oxide phosphor / ceramic / Ga_2O_3 / sol-gel / Ga_2O_3蛍光体 / ゾル・ゲル法 / 薄膜EL素子 / BaTiO_3セラミック |
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| Research Abstract |
High luminance Ga_2O_3 : Mn TFEL devices were fabricated by sol-gel process which eliminate the need for vacuum processes. The sol-gel process also eliminates the need for a heat treatment with a rapid temperature rise. The Ga_2O_3 : Mn thin-film emitting layer was prepared using sol-gel process with gallium acethylacetonate as the Ga source. It should be noted that the highest luminance was obtained with a Ga_2O_3 : Mn TFEL device fabricated by the sol-gel process : luminance of 1271 and 401 cd/m^2 in a device driven at 1kHz and 60 Hz, respectively. In addition, multicolor emitting TFEL devices using Ga_2O_3 : Mn, Cr phosphor thin films could be prepared by chemical deposition using the sol-gel process. A high luminance above 100cd/m^2 was obtained in TFEL devices using Ga_2O_3 : Mn, Cr thin films co-doped with a Cr content up to 2 at.% and Mn content of 0.3 at.% and driven at 1kHz. The emission color from these Ga_2O_3 : Mn, Cr TFEL devices changed from green to red as the co-doped Cr content was varied from 0 to 10 at.%. The emission color changed from green to red as the applied voltage was increased. Thus, this inexpensive method of fabricating Ga_2O_3 : Mn and Ga_2O_3 : Mn, Cr oxide phosphor TFEL devices by a sol-gel process using gallium acethylacetonate, manganese chloride and chromium acethylacetonate is very promising for TFEL displays and lamps.
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