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SELF-FORMATION OF GERMANIUM NANOCRYSTALS AND ITS APPLICATION TO SELF-ADAPTIVE NEURAL DEVICES

Research Project

Project/Area Number13650328
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionMURORAN INSTITUTE OF TECHNOLOGY

Principal Investigator

FUKUDA Hisashi  DEPARTMENT OF ELECTRICAL AND ELECTRONIC ENGINEERING, ASSOCIATE PROFESSOR, 工学部, 助教授 (10261380)

Co-Investigator(Kenkyū-buntansha) NOMURA Shigeru  DEPARTMENT OF ELECTRICAL AND ELECTRONIC ENGINEERING, PROFESSOR, 工学部, 教授 (10002859)
Project Period (FY) 2001 – 2002
Project Status Completed(Fiscal Year 2002)
Budget Amount *help
¥2,100,000 (Direct Cost : ¥2,100,000)
Fiscal Year 2002 : ¥1,000,000 (Direct Cost : ¥1,000,000)
Fiscal Year 2001 : ¥1,100,000 (Direct Cost : ¥1,100,000)
KeywordsGERMANIUM / NANOCRYSTAL / QUANTUM WELL / QUANTUM TUNNELING / QUANTUM CONFINEMENT / MOS STRUCTURE
Research Abstract

Metal-oxide-semiconductor (MOS) structures with a Ge nanocrystal embedded in SiO_2 films were fabricated by Ge^+ ion implantation and subsequent high-temperature annealing. The Raman spectra indicate the evidence of self-assembled Ge nanocrystals in the SiO_2 films. The Ge size and its density were estimated to 3-5 nm and 1×10^<12>/cm^2, respectively. Photoluminescence spectra showed a strong blue-violet band around 400 nm and a weak near-infrared band around 750 nm, respectively. The several implantation-induced deficient centers are believed to be responsible for the blue-light luminescence. Capacitance-voltage characteristics exhibit the flat-band voltage shifts of 1.02 V after the electron injection into the SiO_2/Ge/SiO_2 potential well. An anomalous leakage current was clearly observed in the current-voltage characteristics. The precise simulation of quantum electron transport in the SiO_2 film indicates that the anomalous conduction is originated from resonant tunneling in the SiO_2/Ge/SiO_2 double-well band structure.

Report

(3results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report

Research Products

(24results)

All Other

All Publications

  • [Publications] K.M.A.Salam, H.Konishi, M.Mizuno, H.Fukuda, S.Nomura: "Structural and Electrical Properties of Crystalline (1-x) Ta_2O_<5-x>TiO_2 Thin Films Fabricated by Metalorganic Decomposition"Aplied Surface Science. 190. 88-95 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K.M.A.Salam, H.Fukuda, S.Nomura: "Effects of Additive Elements on Improvement of the Dielectric Properties of Ta_2O_5 Films"Journal of Applied Physics. 93・2. 1169-1175 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] H.Fukuda, S.Maeda, K.M.A.Salam, S.Nomura: "Synthesis of High Dielectric Constant Titanium Oxide Thin Films by Metalorganic Decomposition"Jpn. Journal of Applied Physics. 41・11B. 6912-6915 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K.Kimura, K.M.A.Salam, H.Fukuda, S.Nomura: "Structure Control of Ferroelectric PbTiO_3 Thin Films using SrTiO_3 Buffer Layer Prepared by Metalorganic Decomposition"Meeting Abstracts of 2002 Int.Joint Conf.on the Applications of Ferroelectics. 131 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] 玉置 貴啓, 竹谷 聖克, 福田 永, 野村 滋: "シリコン酸化膜中のゲルマニウム結晶における光学的および電気的特性"平成14年第38回応用物理学会北海道支部、第8回レーザ学会東北・北海道支部合同学術講演会. 18 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K.M.A.Salam, H.Konishi, H.Fukuda, S.Nomura: "Rapid Thermal Processing for Future Semiconductor Devices"Elsevier. 120 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S. Sakuma, T. Yamada, H. Fukuda, S. Nomura: "Self-formation and Characterization of Ge Nanocrystals in SiO_2 Films"Symposium on Surface Science for Micro- and Nano-Device Fabrication (Tokyo). 73 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] H. Fukuda, S. Sakuma, T. Yamada, S. Nomura, M. Nishino, T. Higuchi, S. Ohshima: "Characterization of Ge Nanocrystals Embedded in SiO_2 Films"25^<th> International Conference on the Physics of Semiconductors (Osaka). 85 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] H. Fukuda, S. Sakuma, T. Yamada, S. Nomura, M. Nishino, T. Higuchi, S. Ohshima: "Characterization of Ge Nanocrystals Embedded in SiO_2 Films"Proceedings of the 25^<th> International Conference on the Physics of Semiconductors. to be published. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] H. Fukuda, S. Sakuma, T. Yamada, S. Nomura, M. Nishino, T. Higuchi, S. Ohshima: "Characterization of Ge Nanocrystals Embedded in SiO_2 Films"199^<th> Electrochemical Society (Washington DC). 663 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] H. Fukuda, S. Sakuma, T. Yamada, S. Nomura, M. Nishino, T. Higuchi, S. Ohshima: "Characterization of Ge Nanocrystals Embedded in SiO_2 Films"Journal of Applied Physics. to be published. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Yamada, H. Fukuda, S. Nomura: "Characterization of Ge Nanocrystals Embedded in SiO_2 Films (in Japanese)"The Transaction of the Institute of Electronics, Information and Communication Engineers. Vol.CPM2000-86, No.272. 13-18 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K.M.A.Salam, H.Konishi, M.Mizuno, H.Fukuda, S.Nomura: "Structural and Electrical Properties of Crystalline (1-χ) Ta_2O_5-χTiO_2 Thin Films Fabricated by Metalorganic Decomposition"Applied Surface Science. 190. 88-95 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.M.A.Salam, H.Fukuda, S.Nomura: "Effects of Additive Elements on Improvement of the Dielectric Properties of Ta_2O_5 Films"Journal of Applied Physics. 93・2. 1169-1175 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Fukuda, S.Maeda, K.M.A.Salam, S.Nomura: "Synthesis of High Dielectric Constant Titanium Oxide Thin Films by Metalorganic Decomposition"Jpn. Journal of Applied Physics. 41・11B. 6912-6915 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.Kimura, K.M.A.Salam, H.Fukuda, S.Nomura: "Structure Control of Ferroelectric PbTiO_3 Thin Films using SrTiO_3 Buffer Layer Prepared by Metalorganic Decomposition"Meeting Abstracts of 2002 Int. Joint Conf. on the Applications of Ferroelectics. 131 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] 玉置 貴啓, 竹谷 聖克, 福田 永, 野村 滋: "シリコン酸化膜中のゲルマニウム結晶における光学的および電気的特性"平成14年第38回応用物理学会北海道支部、第8回レーザ学会東北・北海道支部合同学術講演会. 18 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.M.A.Salam, H.Konishi, H.Fukuda, S.Nomura: "Rapid Thermal Processing for Future Semiconductor Devices"Elsevier. 120 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Fukuda, S.Sakuma, T.Yamada, S.Nomura, M.Nishino, T.Higuchi: "Physical and Electrical Properties of Ge-implanted SiO_2 Films"Journal of Applied Physics. Vol.90,No.7. 3524-3528 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.Fukuda, T.Yamada, S.Nomura, M.Nishino, T.Higuchi, S.Oshima: "Characterization of Ge Nanocrystals Embedded in SiO_2 Films"Meeting Abstracts of the 199^<th> Meeting of the Electrochemical Society. 2001・1. 663 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 松永 慎一, 福田 永, 野村 滋, 西野 元一: "シリコン酸化膜中のゲルマニウム微結晶における光学および電気的特性"電子情報通信学会技術研究報告. Vol.101,No244. 25-30 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 福田 永, 玉置 貴啓, 野村 滋, 西野 元一: "シリコン酸化膜中のゲルマニウム微結晶における光学および電気的特性"第49回応用物理学関係連合講演会後援予稿集. (発表予定).

    • Related Report
      2001 Annual Research Report
  • [Publications] 福田 永: "半導体デバイス材料の展望〜半導体ナノテクノロジーの展開〜"材料技術研究&協会表面改質研究会主催 第2回表面改質夏季フォーラム予稿集. 11-16 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 福田 永, 野村 滋(共著): "近赤外線加熱ハンドブック"アグネ技術センター. 200 (2002)

    • Related Report
      2001 Annual Research Report

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Published : 2001-04-01   Modified : 2016-04-21  

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