| Project/Area Number | 13650328 |
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | MURORAN INSTITUTE OF TECHNOLOGY |
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Principal Investigator |
FUKUDA Hisashi DEPARTMENT OF ELECTRICAL AND ELECTRONIC ENGINEERING, ASSOCIATE PROFESSOR, 工学部, 助教授 (10261380)
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| Co-Investigator(Kenkyū-buntansha) |
NOMURA Shigeru DEPARTMENT OF ELECTRICAL AND ELECTRONIC ENGINEERING, PROFESSOR, 工学部, 教授 (10002859)
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| Project Period (FY) |
2001 – 2002
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| Project Status |
Completed(Fiscal Year 2002)
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| Budget Amount *help |
¥2,100,000 (Direct Cost : ¥2,100,000)
Fiscal Year 2002 : ¥1,000,000 (Direct Cost : ¥1,000,000)
Fiscal Year 2001 : ¥1,100,000 (Direct Cost : ¥1,100,000)
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| Keywords | GERMANIUM / NANOCRYSTAL / QUANTUM WELL / QUANTUM TUNNELING / QUANTUM CONFINEMENT / MOS STRUCTURE |
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| Research Abstract |
Metal-oxide-semiconductor (MOS) structures with a Ge nanocrystal embedded in SiO_2 films were fabricated by Ge^+ ion implantation and subsequent high-temperature annealing. The Raman spectra indicate the evidence of self-assembled Ge nanocrystals in the SiO_2 films. The Ge size and its density were estimated to 3-5 nm and 1×10^<12>/cm^2, respectively. Photoluminescence spectra showed a strong blue-violet band around 400 nm and a weak near-infrared band around 750 nm, respectively. The several implantation-induced deficient centers are believed to be responsible for the blue-light luminescence. Capacitance-voltage characteristics exhibit the flat-band voltage shifts of 1.02 V after the electron injection into the SiO_2/Ge/SiO_2 potential well. An anomalous leakage current was clearly observed in the current-voltage characteristics. The precise simulation of quantum electron transport in the SiO_2 film indicates that the anomalous conduction is originated from resonant tunneling in the SiO_2/Ge/SiO_2 double-well band structure.
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