| Project/Area Number |
13650338
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kanazawa University |
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Principal Investigator |
SASAKI Kimihiro Kanazawa University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (40162359)
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| Co-Investigator(Kenkyū-buntansha) |
HATA Tomonobu Kanazawa University, Faculty of Engineering, Professor, 工学部, 教授 (50019767)
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| Project Period (FY) |
2001 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2002: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 2001: ¥2,500,000 (Direct Cost: ¥2,500,000)
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| Keywords | Sputtering / Thin Film / Metallic Mode / High-k Material / Limitted Reaction / ZrO2 / MOSFET / ZrO2 / 制限反応素スパッタ法 / 高誘電率 / SiO2 / high-kゲートテ絶縁物 / 短時間熱処理 / 制限反応スパッタ / 金属モードスパッタ / ゲート絶縁膜 |
|---|
| Research Abstract |
A new sputtering film deposition method, named Limtted Reaction Sputtering Technique, was developed and investigated. Using this technique, YSZ and ZrO2 dielectric films were synthsized for gate materials of next generation MOSFETs. The Si substrate surface oxidation was suppressed consequently a high specific dielectric constant as high as over 20 was obtained. On conventional sputtering technique using oxide target, oxigen ions and radicals are easily to be generated, thus Si is oxidized significantly. However, this teconique does not genarate them, resulting in clear interface between Si substrate and deposited films.
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