| Project/Area Number |
13650356
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kanagawa University |
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Principal Investigator |
HIRATE Takashi Kanagawa University, Faculty of Engineering, Professor, 工学部, 教授 (60078300)
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| Co-Investigator(Kenkyū-buntansha) |
SATOH Tomomasa Kanagawa University, Faculty of Engineering, Assistant, 工学部, 助手 (90343631)
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| Project Period (FY) |
2001 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥2,900,000 (Direct Cost: ¥2,900,000)
Fiscal Year 2002: ¥400,000 (Direct Cost: ¥400,000)
Fiscal Year 2001: ¥2,500,000 (Direct Cost: ¥2,500,000)
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| Keywords | Zinc Sulfide / Silicon / Hetero Junction / Electroluminescence / Thin Film / Zinc Oxide |
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| Research Abstract |
We studied on the electroluminescence characteristics of the ITO/ZnS:Mn/n-Si hetero-junction devices. The devices show the electroluminescence after the electrical forming treatment. The devices operate stably with direct current mode in room temperature and we could lower the initiating voltage of luminescence to about 7[V]. The brightness, however, is low. The result of this study has proved that the luminescence pattern is a set of the many small-sized luminescent points and that the distribution of these points is decided at the forming treatment. The luminance of these points increases with the increasing applied voltage. The number of these points does not change with the increasing voltage, however, and the number density of these points is low. Thus the brightness does not reach the practical value. It is necessary to investigate the mechanism of the generation of the luminescence point and to increase the density of the point.
Further, we studied on the devices with the different structures; ITO/ZnS:Mn/p-Si, ITO/ZnS:Mn/Y2O3/n-Si or ITO/ZnS:Mn/ZnO/n-Si, and on the effect of the Nd:YAG laser irradiation on the Si surface to increase the brightness. As the results of these studies we observed that the device with the inserted layer of the oriented ZnO whiskers between the ZnS:Mn film and the Si substrate showed the excellent electroluminescence characteristics. We study on this device in the future.
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