| Project/Area Number |
13650372
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | The University of Electro-Communications |
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Principal Investigator |
USAMI Kouichi The University of Electro-Communications, Faculty of Electronic Communication, Associate Professor, 電気通信学部, 助教授 (60017407)
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| Co-Investigator(Kenkyū-buntansha) |
GOTO Toshinari The University of Electro-Communications, Faculty of Electronic Communication, Professor, 電気通信学部, 教授 (70017333)
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| Project Period (FY) |
2001 – 2003
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| Project Status |
Completed (Fiscal Year 2003)
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| Budget Amount *help |
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2003: ¥300,000 (Direct Cost: ¥300,000)
Fiscal Year 2002: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2001: ¥2,500,000 (Direct Cost: ¥2,500,000)
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| Keywords | cold cathode / miniature electron source / tunnel emitter / electron emission / emission array / image display / plasma oxidation / Si oxide / 発光素子 / トンネルエミツッタ / S_i酸化膜 |
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| Research Abstract |
MIS (Metal-Insulator-Semiconductor) type electron emitter was fabricated and, the applicability of the emitter to the miniature cathode-ray-tube was investigated. The results are as follows.
(1)Si oxide films in the thickness range of 10-35 nm for the tunneling electron emitter were grown on the n-type Si(100) subtractes by an inductive coupled RF plasma oxidation system. The oxide surface morphology and the oxide stoichiometry of grown films were characterized by the AFM and the XPS, respectively. The grown films were relatively flat and consisted of SiO_2 and Si sub-oxide.
(2)On the oxide film, a thin Au counter electrode, with the thickness of 10nm was deposited and the electron emitter was fabricated. The electrical properties of emitters, such as current-voltage and electron emission characteristics were measured in a high vacuum of 10^<-5>Pa The maximum emission current for the sample having 1 mm^2 emission area was 5.8 μA at the diode voltage of 18V and the transfer ratio (emission current/diode current) exceeded 2.4%.
(3)A miniature cathode-ray-tube configuration was fabricated by using the emitter. The acceleration voltage was set to be 0.5kV-2.5kV, and the luminescence of ZnS ・ Cu ・Al fluorescent on an ITO glass was observed in the vacuum.
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