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Surface Modification and Behavior of Ions and Radicals in Plasma Immersion Ion Implantation

Research Project

Project/Area Number 13680564
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field プラズマ理工学
Research InstitutionChubu University

Principal Investigator

NAKAMURA Keiji  Chubu University, Department of Electrical Engineering, Associate Professor, 工学部, 助教授 (20227888)

Co-Investigator(Kenkyū-buntansha) SUGAI Hideo  Nagoya University, Department of Electrical Engineering, Professor, 大学院・工学研究科, 教授 (40005517)
IKEZAWA Shunjiro  Chubu University, Department of Electrical Engineering, Associate Professor, 工学部, 教授 (60065282)
Project Period (FY) 2001 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥4,200,000 (Direct Cost: ¥4,200,000)
Fiscal Year 2002: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 2001: ¥3,200,000 (Direct Cost: ¥3,200,000)
Keywordsplasma / ion implantation / PIII / secondary electron / SEEC / vacuum ultraviolet / VUV / pulse modulated discharge
Research Abstract

Plasma immersion ion implantation (PIII) has been focused as a novel technique for large-area and/or three-dimensional surface modification. However, there are various problems such as process repeatability and so on. In the present study, surface modification and its in-process monitoring were investigated to solve the problems of the PIII process. The process monitoring was based on measurements of secondary electron emission coefficient (SEEC) of the ion-implanted surface. The SEEC were measured by comparing the total target current to the secondary electron current obtained with a semiconductor detector directly immersed into the plasma. This technique enabled us to measure the SEEC with a displacement current, discriminated.
In argon-diluted oxygen plasma, the SEEC of silicon and copper increased with the processing time in proportion to amount of the implanted oxygen, however the SEEC gradually saturated because the oxygen implantation balanced with ion sputtering of the target surface. On the other hand, in helium-diluted BF3 plasma, the SEEC of silicon decreased with the processing time proportionally to amount of the implanted boron. The results revealed that the SEEC measurements could be applied to in-process monitoring of implanted element existing the target surface.
Optical emission from the plasma had a significant influence on the SEEC since it included vacuum-ultra-violet (VUV) emission whose photon energy is large enough to induce photo electron emission at the irradiated surface. In the present experiments, the VUV emission made the SEEC approximately twice, and the SEEC was sometimes larger than 10. Therefore most of energies supplied to implant ions were consumed for the secondary electron current. To solve the problem, pulse modulation of the discharge was proposed because the optical emission intensity could be reduced with the ion flux kept.

Report

(3 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • Research Products

    (22 results)

All Other

All Publications (22 results)

  • [Publications] K.Nakamura 他2名: "Photon-Enhanced Secondary Electron Emission at Target in Plasma Immersion Ion Implantation"Nuclear Instrum. and Meth. B. (to be published).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K.Nakamura 他2名: "Energy Measurements of Sheath-Accelerated Secondary Electrons in Plasma Immersion Ion Implantation"Surf. Coat. and Technol.. (to be published).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K.Nakamura 他2名: "In-situ Process monitoring in Plasma Immersion ion implantation Based on Measurements of Secondary Electron Emission Coefficient"Surf. Coat. Technol.. 156. 83-86 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K.Nakamura 他2名: "Direct measurements of sheath-accelerated secondary electrons for monitoring the incident ion flux in plasma immersion ion implantation"Plasma Sources Sci. Technol.. 11. 161-164 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K.Nakamura 他2名: "Photon Effects on Secondary Electron Emission Coefficient in Plasma Immersion Ion Implantation"13th Int. Conf. Ion Beam Modification of Materials (IBMM2002)(September 2002, Japan). 60-61 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K.Nakamura 他2名: "Ion-and Photon-Induced Electron Emission From Target During Plasma Immersed Ion Implantation"16th European Conf. on Atomic and molecular Phys. of Ionized Gases (ESCAMPIG 16), 5th Int. Conf. Reactive Plasmas (ICRP 5)(July 2002, France). 147-148 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K. Nakamura, M. Ando and H. Sugai: "Photon-Enhanced Secondary Electron Emission at Target in Plasma Immersion Ion Implantation"Nuclear Instruments and Method B. (to be published).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K. Nakamura, M. Tanaka and H. Sugai: "Energy Measurements of Sheath-Accelerated Secondary Electrons in Plasma Immersion Ion Implantation"Surface and Coating Technology. (to be published).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K. Nakamura, M. Tanaka and H. Sugai: "In-situ Process monitoring in Plasma Immersion ion implantation Based on Measurements of Secondary Electron Emission Coefficient"Surface and Coating Technology. Vol. 156. 83-86 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K. Nakamura, M. Tanaka and H. Sugai: "Direct measurements of sheath-accelerated secondary electrons for monitoring the incident ion flux in plasma immersion ion implantation"Plasma Sources Science and Technology. Vol. 11, No.2. 161-164 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Ando, K. Nakamura and H. Sugai: "Ion-and Photon-Induced Electron Emission From Target During plasma Immersed Ion"Implantation'16th European Conf. On Atomic and molecular Phys. Of Ionized Gases (ESCAMPIG 16), 5th Int. Conf. Reactive Plasmas (ICRP 5). (July 2002, France) Vol, 1,P1_54. 147-148

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K. Nakamura, M. Ando and H. Sugai: "Photon Effects on Secondary Electron Emission Coefficient in Plasma Immersion Ion Implantation"13th Int. Conf. Ion Beam Modification of Materials (IBMM2002). (September 2002, Japan) P2-016. 60-61

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K. Nakamura, M. Ando and H. Sugai: "In-situ Monitoring of Incident Ion Flux and Ion-Implanted Surface in Plasma Immersion Ion Implantation"Frontiers of Surface Engineering 2001. (October 2001, Japan) B3-04. 210

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K. Nakamura, M. Ando, M. Tanaka and H. Sugai: "In-situ Monitoring of Incident Ion Flux Based on High-Energy Secondary Electron Measurements in Plasma Immersion I on Implantation"6th Int. Workshop on Plasma-Based Ion Implantation. (June 2001, France) IV.2. 26

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] K.Nakamura et al.: "Direct measurements of sheath-accelerated secondary electrons for monitoring the incident ion flux in plasma immersion ion implantation"Plasma Sources Science and Technology. 11. 161-164 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.Nakamura et al.: "In-situ process monitoring in plasma immersion ion implantation based on measurements of secondary electron emission coefficient"Surface and Coating Technology. 156. 83-86 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.Nakamura et al.: "Photon-Enhanced Secondary Electron Emission at Target in Plasma Immersion Ion Implantation"Nuclear Instruments and Methods in Physical Research B. (to be published).

    • Related Report
      2002 Annual Research Report
  • [Publications] K.Nakamura et al.: "Photon Effects on Secondary Electron Emission Coefficient in Plasma Immersion Ion Implantation"13th Int. Conf. Ion Beam Modification of Materials (IBMM2002) (September 2002, Japan). 60-61 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Ando et al.: "Ion-and Photon-Induced Electron Emission From Target During Plasma Immersed Ion Implantation"16th European Conf. on Atomic and molecular Phys. of Ionized Gases (ESCAMPIG 16) & 5th Int. Conf. Reactive Plasmas (ICRP5) (July 2002, France). 1. 147-148 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.Nakamura他2名: "In-situ Monitoring of Incident Ion Flux and Ion-Implanted Surface in Plasma Immersion Ion Implantation"Frontiers of Surface Engineering 2001(October 2001, Japan). 210 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 安藤正樹他2名: "プラズマイオン注入における二次電子電流の測定 中村圭二,菅井秀郎;31, p. 16"電気関係学会東海支部連合大会(2001年11月豊橋). 16 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 中村圭二他2名: "プラズマイオン注入における二次電子電流の測定"電気学会放電研究会(2001年11月京都). 53-58 (2001)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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