| Project/Area Number |
13F03716
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Single-year Grants |
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| Section | 外国 |
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| Research Field |
Environmental technology/Environmental materials
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
Svrcek Vladimir (SVRCEK Vladimir) (2014-2015) 国立研究開発法人産業技術総合研究所, 太陽光発電研究センター, 主任研究員 (80462828)
VLADIMIR SVRCEK (2013) 独立行政法人産業技術総合研究所, 太陽光発電工学研究センター研究部門, 主任研究員
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| Co-Investigator(Kenkyū-buntansha) |
LOZAC'H MICKAEL 国立研究開発法人産業技術総合研究所, 太陽光発電研究センター, 外国人特別研究員
LOZAC'H Mickael 独立行政法人産業技術総合研究所, エネルギー・環境領域 太陽光発電研究センター, 外国人特別研究員
MICKAEL Lozac'h 独立行政法人産業技術総合研究所, 太陽光発電工字研究センター研究部門, 外国人特別研究員
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 2015: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 2014: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2013: ¥800,000 (Direct Cost: ¥800,000)
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| Keywords | silicon-tin nanocrystals / photovoltaic / nanocrystals / semivonducting nanocrystals / direct energy band gep / hybrid solar cells |
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| Outline of Annual Research Achievements |
SiSn-ncs were fabricated by laser ablation in liquid media technique that generates high localized plasma on the surface of amorphous SiSn target. This method synthetized SiSn-ncs alloys that was not possible using conventional techniques such as thin film deposition, high frequency plasma enhanced chemical vapor deposition, or pulsed laser deposition. The nanoparticles generated reach a quantum confinement size about 4nm with clear atomic plans observed by transmission electron microscopy. SiSn-ncs were analyzed by synchrotron radiation XRD to estimate a Si0.88Sn0.12-ncs alloys that can correspond theoretically to direct energy gap transition. Optical bandgap was estimated to be 0.81eV by absorbance measurements, which is well below the silicon bandgap. A low concentration of oxygen on the surface of SiSn-ncs was underlined by Fourier transient infrared spectra, which is of great importance for the stability over time of the devices.
The photovoltaic properties of SiSn-ncs were also analyzed using hybrid solar cell devices. Our findings underlines an improvement of the short-circuit current for devices using conjugated polymer PTB7 mixed with SiSn-ncs as active layer. This improvement is related to a better absorption at longer wavelengths due to the low energy band gap and also due to its possible direct transition. An improvement of the open-circuit voltage is also confirmed, related to the bulk heterojunction quality. It is the first report about the photovoltaic effect of SiSn-ncs alloy.
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| Research Progress Status |
27年度が最終年度であるため、記入しない。
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| Strategy for Future Research Activity |
27年度が最終年度であるため、記入しない。
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