電子スピントロニクスデバイス研究調整班

• Project/Area Number: 14076101
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: The University of Tokyo
• Principal Investigator: 田中 雅明 東京大学, 大学院・工学系研究科, 教授 (30192636)
• Co-Investigator(Kenkyū-buntansha): 山田 省二 北陸先端科学技術大学院大学, 新素材センター, 教授 (00262593) ; 猪俣 浩一郎 (猪股 浩一郎) 東北大学, 大学院・工学研究科, 教授 (90323071) ; 秋永 広幸 独立行政法人産業技術総合研究所, ナノテクノロジー研究部門, グループ長 (90221712)
• Project Period (FY): 2002 – 2005
• Project Status: Completed (Fiscal Year 2005)
• Budget Amount: ¥15,600,000 (Direct Cost: ¥15,600,000); Fiscal Year 2005: ¥4,500,000 (Direct Cost: ¥4,500,000); Fiscal Year 2004: ¥4,600,000 (Direct Cost: ¥4,600,000); Fiscal Year 2003: ¥4,200,000 (Direct Cost: ¥4,200,000); Fiscal Year 2002: ¥2,300,000 (Direct Cost: ¥2,300,000)
• Keywords: スピントロニクス / 電子デバイス / ヘテロ構造 / トンネル磁気抵抗効果 / 磁気抵抗スイッチ効果 / スピンFET / スピンMOSFET / MRAM / スピン依存伝導 / ハーフメタル / 磁気抵抗効果 / ハーフメタ / ヘテロ構造電子デバイス / 強磁性トンネル接合 / キャリアスピン / 電子スピントロニクスデバイス / スピン注入 / グラニュラー構造

Research Abstract

平成17度には、前年に引き続きこれまでに開発したさまざまなスピントロニクス材料を用いて、スピンの生成、トンネル効果による輸送、注入に関する研究を行い、機能としては記憶と計測(+論理演算)を行う下記デバイスの調査研究、分析と研究開発を行った。8月に行われた国際会議(Spintech III)に関連して第1線で活躍中の外国人研究者を招聘し、研究討論を行った。次の項目に関し成果のとりまとめを行った。1月末に年度末成果報告会および公開シンポジウムを開催した。
(1)強磁性トンネル接合デバイス
・半導体と整合性のよいフルエピタキシャル強磁性トンネル接合の作製とTMRデバイス(田中)
・スイッチイング機能付きMRAM素子(猪俣、田中)
・共鳴トンネル型TMRデバイス(田中、山田)
(2)磁性グラニュラー構造デバイス
・磁気抵抗スイッチ効果の解明と高感度磁気センサへの応用(秋永)
・半導体/強磁性金属グラニュラー構造の作製と磁気輸送特性の解明(田中)
(3)スピンFETおよびスピンMOSFETの試作と動作原理の実証
・半導体チャネル中へのスピン注入と伝導、スピンの検出(山田、田中)

Research Products

• [Journal Article] Quantum Oscillation of the Tunneling Conductance in Fully Epitaxial Double Barrier Magnetic Tunnel Junctions (2006)
  • Author(s): T.Nozaki, N.Tezuka, K.Inomata
  • Journal Title: Physical Review Letters 96 Pages: 27208-27208
• [Journal Article] Tunneling magnetoresistance in GaMnAs/AlAs/InGaAs/AlAs/GaMnAs double-barrier magnetic tunnel junctions (2005)
  • Author(s): S.Ohya, P-N.Hai, M.Tanaka
  • Journal Title: Applied Physics Letters 87 Pages: 12105-12105
  • NAID: 10015555965
• [Journal Article] High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping (2005)
  • Author(s): A.M.Mazmul, T.Amemiya, Y.Shuto, S.Sugahara, M.Tanaka
  • Journal Title: Physical Review Letters 95 Pages: 17201-17201
• [Journal Article] Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-doped Ge Thin Film (2005)
  • Author(s): S.Sugahara, K.L.Lee, S.Yada, M.Tanaka
  • Journal Title: Japanese Journal of Applied Physics(Express Letter) 44
  • NAID: 10016873250
• [Journal Article] Large tunnel magnetoresistance at room temperature with a Co2FeAl full-Heusler alloy electrode (2005)
  • Author(s): S.Okamura, a!A.Miyazaki, S.Sugimoto, N.Tezuka, K.Inomata
  • Journal Title: Applied Physics Letters 86 Pages: 232503-232503
• [Journal Article] A spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) using a ferromagnetic semiconductor for the channel (2005)
  • Author(s): S.Sugahara, M.Tanaka
  • Journal Title: Journal of Applied Physics 97
• [Journal Article] A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain (2004)
  • Author(s): S.Sugahara, M.Tanaka
  • Journal Title: Appl.Phys.Lett. 84 Pages: 2307-2309
• [Journal Article] Novel Reconfigurable Logic Gates Using Spin Metal-Oxide- Semiconductor Field-Effect Transistors (2004)
  • Author(s): T.Matsuno, S.Sugahara, M.Tanaka
  • Journal Title: Jpn.J.Appl.Phys 43 Pages: 6032-6037
  • NAID: 10013573360
• [Journal Article] Spin-related transport in one-dimensional conductors made at high In content InGaAs/InALAs hetero junctions (2004)
  • Author(s): S.Yamada
  • Journal Title: J.Sci.and Tech.Advanced Materials 5 Pages: 301-304
• [Journal Article] Tunnel magnetoresistance using full-Heusler alloys (2004)
  • Author(s): K.Inomata, S.Okamura, N.Tezuka
  • Journal Title: J.Magn.Magn.Mater. 282 Pages: 269-269
• [Journal Article] Au/GaAs Magnetoresistive - Switch - Effect Devices Fabricated By Wet Etching (2004)
  • Author(s): Z.G.Sun, M.Mizuguchi, H.Akinaga
  • Journal Title: Jpn.J.Appl.Phys 43 Pages: 2101-2103
  • NAID: 10012949467
• [Journal Article] Spin-Filter Transistor (2004)
  • Author(s): S.Sugahara, M.Tanaka
  • Journal Title: Jpn.J.Appl.Phys 43
  • NAID: 10013276677
• [Publications] A.M.Nazmul, S.Sugahara, M.Tanaka: "Ferromagnetism and High Curie Temperature in Semiconductor Heterostructures with Mn-delta-doped GaAs and p-type Selective Doping"Physical Review. B67. 241308(R)-1-241308(R)-4 (2003)
• [Publications] S.Sugahara, M.Tanaka: "Epitaxial Growth and Magnetic Properties of MnAs/AlAs/MnAs Magnetic Tunnel Junctions on Exact (lll)B GaAs Substrates : the Effect of a Ultrathin GaAs Buffer Layer"Journal of Crystal Growth. 251. 317-322 (2003)
• [Publications] S.Ohya, H.Kobayashi, M.Tanaka: ""Magnetic properties of heavily Mn-doped quaternary alloy magnetic semiconductor (InGaMn)As grown on InP""Applied Physics Letters. 83. 2175-2177 (2003)
• [Publications] T.Kita, S.Gozu, Y.Sato, S.Yamada: "Observation of e2/h conductance steps in a side-gate point contact on InGaAs/InAlAs heterostructure"J. Superconductivity,. 16. 327-330 (2003)
• [Publications] N.Tezuka, N.Koike, K.Inomata, S.Sugimoto: "Single domain observation for synthetic antiferromagnetically coupled bots with low aspect ratios"Applied Physics Letters. 82. 604-606 (2003)
• [Publications] J.G.Sun, M.Mizuguchi, H.Akinaga: "Au/GaAs Magnetoresistive Switch Effect Devices Fabricated by Wet Etching"Japanese Journal of Applied Physics. 43(in press). (2004)
• [Publications] S.Sugahara, M.Tanaka: "Tunneling Magnetoresistance in Fully Epitaxial MnAs/AlAs/MnAs Ferromagnetic Tunnel Junctions Grown on Vicinal GaAs(111)B Substrates"Applied Physics Letters. Vol.80. 1969-1972 (2002)
• [Publications] A.M.Nazmul, S.Sugahara, M.Tanaka: "Transport Properties of Mn delta-doped GaAs and the effect of selective doping"Applied Physics Letters. Vol.80. 3020-3022 (2002)
• [Publications] M.Tanaka: "Ferromagnet (MnAs)/III-V Semiconductor Hybrid Structures"Semiconductor Science and Technology. Vol.17, No.4. 327-341 (2002)
• [Publications] M.Tanaka, Y.Higo: "Tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor heterostructures"Physica E. Vol.13. 495-503 (2002)
• [Publications] S.Sugahara, M.Tanaka: "Growth Characteristics and Tunneling magnetoresistance of MnAs/AlAs/MnAs Trilayer Heterostructures Grown on Vicinal GaAs (111)B Substrates"Physica E. Vol.13. 582-588 (2002)
• [Publications] H.Shimizu, M.Tanaka: "Quantum size effect and ferromagnetic ordering in ultrathin GaMnAs/AlAs heterostructures"Journal of Applied Physics. Vol.91. 7487-7489 (2002)