| Project/Area Number |
14076207
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
TANAKA Masaaki University of Tokyo, Graduate School of Engineering, Professor, 大学院工学系研究科, 教授 (30192636)
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| Co-Investigator(Kenkyū-buntansha) |
SUGAHARA Satoshi University of Tokyo, Graduate School of Frontier Sciences, Research Associate, 新領域創成科学研究科, 助手 (40282842)
INOUE Junichiro Nagoya University, Graduate School of Engineering, Professor, 大学院工学研究科, 教授 (60115532)
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| Project Period (FY) |
2002 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥43,000,000 (Direct Cost: ¥43,000,000)
Fiscal Year 2005: ¥11,500,000 (Direct Cost: ¥11,500,000)
Fiscal Year 2004: ¥12,300,000 (Direct Cost: ¥12,300,000)
Fiscal Year 2003: ¥12,300,000 (Direct Cost: ¥12,300,000)
Fiscal Year 2002: ¥6,900,000 (Direct Cost: ¥6,900,000)
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| Keywords | Spintronics / Electronic device / Heterostructure / Tunneling magnetoresistance / Spin MOSFET / GeFe / GeMn / GaMnAs / MnAs微粒子 / スピン依存伝導 / 共鳴トンネル効果 / デルタドープ / 選択ドープヘテロ構造 / 強磁性転移温度 / 強磁性半導体 / 磁気抵抗効果 / ヘテロ構造電子デバイス / 強磁性トンネル接合 / キャリアスピン / 電子スピントロニクスデバイス / MnAs |
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| Research Abstract |
We have developed a variety of spintronic heterostructures, Mn-delta-doped GaAs/p-AlGaAs with high Curie temperatures, GaMnAs/AlAs magnetic tunnel junctions with a single AlAs barrier and double AlAs barriers exhibiting clear TMR and resonant tunneling, a new group-IV based ferromagnetic semiconductor GeFe, proposed a new spin transistor (spin MOSFET) and, reconfigurable logic devices. These studies have contributed to the advance of spintronic heterostructure materials and devices, and increased the freedom of design and controllability.
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