| Project/Area Number |
14205026
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
機械工作・生産工学
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| Research Institution | Kumamoto University |
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Principal Investigator |
WATANABE Junji Kumamoto University, Faculty of Engineering, Professor, 工学部, 教授 (40281076)
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| Co-Investigator(Kenkyū-buntansha) |
TOUGE Mutsumi Kumamoto University, Faculty of Engineering, Assistant Professor, 工学部, 助教授 (00107731)
MATSUMOTO Yasumichi Kumamoto University, Graduate school of Science and Technology, Professor, 大学院・自然科学研究科, 教授 (80114172)
KURODA Noritaka Kumamoto University, Faculty of Engineering, Professor, 工学部, 教授 (40005963)
OBUCHI Yoshifumi Fukuoka Institute of Technology, Faculty of Engineering, Assistant Professor, 工学部, 助教授 (10176993)
SHIMADA Shoichi Osaka Electrical Communication University, Faculty of Engineering, Professor, 工学部, 教授 (20029317)
ERYU Osamu Nagoya Institute of Technology, Faculty of Engineering, Assistant Professor, 電気情報, 助教授 (10223679)
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| Project Period (FY) |
2002 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥50,180,000 (Direct Cost: ¥38,600,000、Indirect Cost: ¥11,580,000)
Fiscal Year 2004: ¥12,740,000 (Direct Cost: ¥9,800,000、Indirect Cost: ¥2,940,000)
Fiscal Year 2003: ¥19,240,000 (Direct Cost: ¥14,800,000、Indirect Cost: ¥4,440,000)
Fiscal Year 2002: ¥18,200,000 (Direct Cost: ¥14,000,000、Indirect Cost: ¥4,200,000)
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| Keywords | Polishing machine with UV rays / TiO_2 photocatalyst / Quartz plate / GaAs semiconductor / Silicon carbide single crystal / Diamond single crystal / X-ray photo spectroscopy / Surface roughness / TiO_2固体光触媒 / 紫外光線 / SiC単結晶 / 酸化膜 / 研磨加工 / 分子動力学シミュレーション / FT-IR分析 |
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| Research Abstract |
The research target in this project is to develop the ultra-precision machining technology of novel semiconductor substrates, such as GaAs, silicon carbide and diamond single crystal, applied to future devices with nano-structure. The basic concept of the technology is application of solid catalysis and ultra-violet rays in polishing technology. The results obtained are as follows.
(1)Ultra-precision polishing of GaAs substrate
Ultra-violet rays was irradiated on the GaAs wafer on which TiO_2 photocatalyst powder was dispersed for ten minutes. It is found that oxide film composed from Ga_2O_3 and As_2O_3 was detected by evaluation method of XPS. It is possible to polish GaAs by means of removing the oxide film with safety and high quality. On the other hand, hydroxyl-radical generated from H_2O_2 is also available for GaAs polishing.
(2)Ultra-precision polishing of silicon carbide substrate
Silicon terminated surface of SiC single crystal is polished with Cr_2O_3-grinding wheel to high quality and high efficiency. The stock removal rate of it achieves to 3 micrometer per hour and the surface roughness polished is below Ra 0.3nm. It was found that there is no sub-surface damage from the evaluation by CAICISS method.
It was found that SiC single crystal can be polished with quartz disk under ultra-violet rays irradiation. The polishing mechanism of this based on photochemical reaction of SiC semiconductor.
(3)Ultra-precision polishing of diamond single crystal
The (100) surface of diamond single crystal can be polished with quartz disk under ultra-violet rays irradiation. The stock removal rate is achieved to 2 micrometers per hour under the condition of polishing pressure of 70 MPa. The surface roughness of the surface polished is below Ra 0.5nm.
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