| Project/Area Number |
14205047
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | KYUSHU UNIVERSITY |
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Principal Investigator |
YUKIO Watanabe Kyushu University, Department of Electronics, Professor, 大学院・システム情報科学研究院・電子デバイス部門, 教授 (80037902)
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| Co-Investigator(Kenkyū-buntansha) |
SHIRATANI Masaharu KYUSHU UNIVERSITY, Department of electrorics, Associate Professor, 助教授 (90206293)
KOGA Kazunori KYUSHU UNIVERSITY, Department of electronics, Research Associate, 助手 (90315127)
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| Project Period (FY) |
2002 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥54,080,000 (Direct Cost: ¥41,600,000、Indirect Cost: ¥12,480,000)
Fiscal Year 2004: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
Fiscal Year 2003: ¥19,500,000 (Direct Cost: ¥15,000,000、Indirect Cost: ¥4,500,000)
Fiscal Year 2002: ¥26,130,000 (Direct Cost: ¥20,100,000、Indirect Cost: ¥6,030,000)
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| Keywords | amorphous silicon / clustering reaction control in plasma CVD / silicon particle / thin film solar cell / light induced degradation / cluster eliminating filter / multi-hollow discharge / higher order silane / Si-H結合 / Si-H_2結合 / 高周波放電 / 太陽電池 / 微細構造パラメータ / ショットキセル / 水素希釈 |
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| Research Abstract |
We have developed clustering reaction control in plasma CVD for fabricating high efficiency a-Si:H solar cells. Following results are obtained in this study.
1.We have developed a filter for eliminating cluster contribution to films. We have suppressed the contribution to films 1/100 times as low as that to conventional device quality films.
2.We have succeeded in depositing a-Si:H films which show little light induced defects by using the filter together with a cluster-suppressed plasma CVD.
3.We have developed multi-hollow discharges for realizing cluster-free a-Si:H.
4.We have succeeded in fabricating a Ni/a-Si:H/n^+ c-Si Schottkey cell which has a littile light induced degradation of 4%.
These results indicates that suppression of contribution of clusters to films is the key to stable high efficiency a-Si:H solar cell.
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