Investigation of mechanism of bias sputtering causing autocloning

• Project/Area Number: 14205054
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: 電子デバイス・機器工学
• Research Institution: Gunma University
• Principal Investigator: HANAIZUMI Osamu Gunma University, Faculty of Engineering, Professor, 工学部, 教授 (80183911)
• Co-Investigator(Kenkyū-buntansha): MOTOJIMA Kuniyuki Gunma University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (30272256)
• Project Period (FY): 2002 – 2004
• Project Status: Completed (Fiscal Year 2004)
• Budget Amount: ¥37,830,000 (Direct Cost: ¥29,100,000、Indirect Cost: ¥8,730,000); Fiscal Year 2004: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2003: ¥8,580,000 (Direct Cost: ¥6,600,000、Indirect Cost: ¥1,980,000); Fiscal Year 2002: ¥24,960,000 (Direct Cost: ¥19,200,000、Indirect Cost: ¥5,760,000)
• Keywords: autocloning / bias sputtering / photonic crystal / Si nanocrystal / blue-light emission / optical nonlinear effect / SHG / quasi phase matching / 高周波スパッタリング / 二重干渉露光 / CdS / フォトルミネッセンス / 光デバイス / 発光素子

Research Abstract

CdS two-dimensional photonic crystals were fabricated by using double-interference exposure and rf sputtering. A suppressed photoluminescence spectrum was observed normal to the surface in the wavelength range other than in-plane resonance.
We developed a dry-etching process to form holes with diameters of 5 microns to 50 of microns in 7-micron thick a-Si/SiO_2 three-dimensional photonic crystal layers fabricated on InP substrates by the autocloning method. We also demonstrated wet-etching processes to remove damaged surfaces of exposed InP substrates and selectively grew In_<0.62>Ga_<0.38>As/In_<0.45>Ga_<0.31>Al_<0.24>As multiple quantum well by molecular beam epitaxy in a region surrounded by a-Si/SiO_2 three-dimensional photonic crystals. Polarization dependence was observed in a spontaneous emission transmitted at 75 microns in a lateral direction in the photonic crystal layer.
We observed a photoluminescence(PL) spectrum at room temperature that had a peak with full width of half maximum(FWHM) of 0.38 eV near the bandgap energy of 3.2 eV from an Si:SiO_2 sputtered film without annealing. Blue-light emission could be seen by the naked eye. A low-intensity PL peak with FWHM of 0.20 eV was also observed at around 1.6 eV. We have already demonstrated that our method automatically forms Si clusters contributing to visible emission. Our results did not contradict the well-founded conjecture that there were two mechanisms of emission from Si clusters : emission at 1.6 to 1.7 eV due to the surface state of the oxidized Si nanocrystals and emission at the bandgap energy originating from the quantum confinement effect. Blue-light-emission from Ti:SiO_2 sputtered films was also observed at room temperature without annealing. The peaks of PL spectra were located at 3.03 to 3.05 eV and FWHM were 0.38 to 0.40 eV, which were almost the same in samples having different energies of absorption edge.

Research Products

• [Journal Article] Optical gain in as-grown sputtered SiO_2 film containing Si-Ge nanocrystals (2005)
  • Author(s): C.Chaudhari
  • Journal Title: Journal of Light and Visual Environment (掲載予定)
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Blue-light emission from sputtered Ti:SiO_2 films without annealing (2005)
  • Author(s): O.Hanaizumi, K.Ono, Y.Ogawa, T.Matsumoto
  • Journal Title: The European Conference on Lasers and Electro-Optics (CLEO/Europe 2005)(Munichs Germany) CE6-6-FRI
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Optical gain in as-grown sputtered SiO_2 film containing Si-Ge nano crystals (2005)
  • Author(s): C.Chaudhari
  • Journal Title: Journal of Light and Visual Environment (印刷中)
• [Journal Article] Si : SiO_2スパッタ膜におけるバンドギャップエネルギーに依存しない青色発光帯 (2004)
  • Author(s): 花泉修
  • Journal Title: 照明学会誌 88 Pages: 91-93
  • NAID: 110001145983
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Blue-light emission from sputtered Ti : SiO_2 films without annealing (2004)
  • Author(s): 0.Hanaizumi
  • Journal Title: Appl.Phys.Lett. 84 Pages: 3843-3845
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] a-Si : H/SiO_2 multilayer films fabricated by radio-frequency magnetron sputtering for optical filters (2004)
  • Author(s): H.Yoda
  • Journal Title: Applied Optics 43 Pages: 3548-3554
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] The band of blue-light emission independent ofbandgap energy in Si:SiO_2 sputtered films (2004)
  • Author(s): O.Hanaizumi, T.Koga, O.takei, K.Ono, Y.Ogawa, T.Matsumoto, Y.Hiratani
  • Journal Title: J.Illum.Inst.Jpn. vol.88, no.2 Pages: 91-93
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Blue-Light Emission from Sputtered Ti:SiO_2 Films without Annealing (2004)
  • Author(s): O.Hanaizumi, K.Ono, Y.Ogawa, T.Matsumoto, H.Yoda, K.Shiraishi
  • Journal Title: Appl.Phys.Lett. vol.84, no.19 Pages: 3843-3845
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] a-Si:H/SiO_2 Multilayer Films Fabricated by Radio-Frequency Magnetron Sputtering for Optical Filters (2004)
  • Author(s): H.Yoda, K.Shiraishi, Y.Hiratani, O.Hanaizumi
  • Journal Title: Applied Optics vol.43, no.17 Pages: 3548-3554
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Optical gain in as-grown sputtered Si-nanocrystal doped SiO_2 films (2004)
  • Author(s): C.Chaudhari, O.Hanaizumi, A.Ogihara, T.Koga, O.Takei, Y.Tashiro
  • Journal Title: Proceedings of the International Conference on Optoelectronics Technology(Jalgaon, India) ICOT-2004 Pages: 50-55
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Blue-Light Emission from Sputtered Ti:SiO_2 Films without Annealing (2004)
  • Author(s): O.Hanaizumi
  • Journal Title: Applied Physics Letters 84・19 Pages: 3843-3845
• [Journal Article] a-Si:H/SiO_2 Multilayer Films Fabricated by Radio-Frequency Magnetron Sputtering for Optical Filters (2004)
  • Author(s): H.Yoda
  • Journal Title: Applied Optics 43・17 Pages: 3548-3554
• [Journal Article] Blue-light emission from sputtered Si : SiO_2 films without annealing (2003)
  • Author(s): O.Hanaizumi
  • Journal Title: Appl.Phys.Lett. 82 Pages: 538-540
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] 高周波スパッタリングによるCdS系2次元フォトニック結晶の作製と発光特性の評価 (2003)
  • Author(s): 花泉修
  • Journal Title: 照明学会誌 87 Pages: 133-135
  • NAID: 110001143277
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Ti : SiO_2スパッタ膜からの青色発光の観測 (2003)
  • Author(s): 花泉修
  • Journal Title: 電子情報通信学会論文誌C J86-C Pages: 1218-1219
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Blue-light emission from sputtered Si:SiO_2 films without annealing (2003)
  • Author(s): O.Hanaizumi, K.Ono, Y.Ogawa
  • Journal Title: Appl.Phys.Lett. vol.82, no.4 Pages: 538-540
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Fabrication of structures with III-V semiconductors embedded into 3D photonic crystals (2003)
  • Author(s): O.Hanaizumi, Y.Sakurai, Y.Aizawa, S.Kawakami, E.Kuramochi, S.Oku
  • Journal Title: Thin Solid Films vol.426, no.1/2 Pages: 172-177
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Fabrication of CdS two-dimensional photonic crystals using rf sputtering and assessment of their emission properties (2003)
  • Author(s): O.Hanaizumi, T.Koga, Y.Hasegawa
  • Journal Title: J.Illum.Inst.Jpn. vol.87, no.2 Pages: 133-135
  • NAID: 110001143277
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Observation of blue light emission from sputtered Ti:SiO_2 films (2003)
  • Author(s): O.Hanaizumi, K.Ono, Y.Ogawa, T.Matsumoto
  • Journal Title: Trans.IEICE C vol.J86-C, no.11 Pages: 1218-1219
  • NAID: 110003172075
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Blue-light emission from sputtered Si:SiO_2 films without annealing (2003)
  • Author(s): O.Hanaizumi, K.Ono, Y.Ogawa
  • Journal Title: The European Conference on Lasers and Electro-Optics (CLEO/Europe 2003), Munich, Germany CG6-4-THU
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Fabrication and assessment of Si : SiO_2 sputtered films emitting white light without annealing (2002)
  • Author(s): O.Hanaizumi
  • Journal Title: Jpn.J.Appl.Phys. 41
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] アニールをしないSi : SiO_2スパッタ膜からの青色発光 (2002)
  • Author(s): 花泉修
  • Journal Title: 電子情報通信学会論文誌C J85-C Pages: 1036-1037
  • NAID: 110004069162
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Fabrication and assessment of Si:SiO_2 sputtered films emitting white light without annealing (2002)
  • Author(s): O.Hanaizumi, K.Ono, Y.Ogawa, T.Koga, Y.Hasegawa, A.Ogihara, G.Saito
  • Journal Title: Jpn.J.Appl.Phys. vol.41, no.10A
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Blue light emission from sputtered Si:SiO_2 films without annealing (2002)
  • Author(s): O.Hanaizumi, K.Ono, Y.Ogawa
  • Journal Title: Trans.IEICE C vol.J85-C, no.11 Pages: 1036-1037
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Fabrication of structures with III-V semiconductors embedded into 3D photonic crystals
  • Author(s): O.Hanaizumi
  • Journal Title: Thin Solid Films 426 Pages: 172-177
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Optical gain in as-grown sputtered SiO2 films containing Si-Ge nanocrystals
  • Author(s): C.Chaudhari, O.Takei, Y.Tashiro, O.Hanaizumi
  • Journal Title: Journal of Light and Visual Environment (to be published)
  • Description: 「研究成果報告書概要(欧文)」より
• [Book] Photonics Based on Wavelength Integration and Manipulation (2005)
  • Author(s): O.Hanaizumi
  • Total Pages: 360
  • Publisher: The Institute of Pure and Applied Physics
  • Description: 「研究成果報告書概要(和文)」より
• [Patent(Industrial Property Rights)] 白色発光Si : SiO_2膜およびそれを具備した白色発光素子 (2002)
  • Inventor(s): 花泉修
  • Industrial Property Rights Holder: 科学技術振興機構
  • Industrial Property Number: 2002-240811
  • Filing Date: 2002-08-21
  • Description: 「研究成果報告書概要(和文)」より
• [Patent(Industrial Property Rights)] 青色発光Si : SiO_2膜とそれを具備した青色発光素子ならびに青色発光Si : SiO_2膜の製造方法 (2002)
  • Inventor(s): 花泉修
  • Industrial Property Rights Holder: 科学技術振興機構
  • Industrial Property Number: 2002-246686
  • Filing Date: 2002-08-27
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] 花泉修: "Ti:SiO_2スパッタ膜からの青色発光の観測"電子情報通信学会論文誌 C. J86-C・11. 1218-1219 (2003)
• [Publications] 花泉修: "Si:SiO_2スパッタ膜におけるバンドギャップエネルギーに依存しない青色発光帯"照明学会誌. 88-2. 91-93 (2004)
• [Publications] O.Hanaizumi: "Blue-light emission from sputtered Si : SiO_2 films without annealing"Appi. Phys. Lett.. 82・4. 538-540 (2003)
• [Publications] 花泉修: "高周波スパッタリングによるCdS系2次元フォトニック結晶の作製と評価"照明学会誌. 87・2. 133-135 (2003)
• [Publications] 花泉修: "アニールをしないSi : SiO_2スパッタ膜からの青色発光"電子情報通信学会誌. J85-C・11. 1036-1037 (2002)
• [Publications] O.Hanaizumi: "Fabrication and assessment of Si : SiO_2 sputtered films emitting white light without annealing"Jpn. J. Appl. Phys.. 41・10A. L1084-L1087 (2002)
• [Publications] O.Hanaizumi: "Fabrication of structures with III-V semiconductors embedded into 3D photonic crystals"Thin Solid Films. 426・1/2. 172-177 (2003)