| Project/Area Number |
14350004
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | National University Corporation Tokyo University of Agriculture and Technology |
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Principal Investigator |
MORISHITA Yoshitaka National University Corporation Tokyo University of Agriculture and Technology, Institute of Symbiotic Science and Technology, Associate Professor, 大学院・共生科学技術研究部, 助教授 (00272633)
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| Co-Investigator(Kenkyū-buntansha) |
SATO Katsuaki National University Corporation Tokyo University of Agriculture and Technology, Institute of Symbiotic Science and Technology, Professor, 大学院・共生科学技術研究部, 教授 (50170733)
ISHIBASHI Takayuki National University Corporation Tokyo University of Agriculture and Technology, Institute of Symbiotic Science and Technology, Assistant Professor, 大学院・共生科学技術研究部, 助手 (20272635)
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| Project Period (FY) |
2002 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥14,900,000 (Direct Cost: ¥14,900,000)
Fiscal Year 2004: ¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 2003: ¥4,000,000 (Direct Cost: ¥4,000,000)
Fiscal Year 2002: ¥9,000,000 (Direct Cost: ¥9,000,000)
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| Keywords | Photonic crystals / Anodization / Quantum dots / Semiconductor / Molecular beam epitaxy / フォトニック / フォトニクス |
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| Research Abstract |
The effect of a magnetic field on the structural properties during anodization of GaAs substrates was investigated to gain insights into formation of ordered hole arrays on GaAs surfaces. It was found that Lorentz force induced by a magnetic field considerably affects formation of honeycomb hole arrays. In the case of the anodization with a magnetic field parallel to the surface, regularity of honeycomb holes was increased with increasing the magnetic field up to 1.5T. The size of honeycomb holes was also increased with increasing the magnetic field.
The GaAs hole array with high-odered hole configuration was next prepared by a replication process using anodic porous alumina as a starting structure. The average diameter of porous alimina was 26 nm, and the density of porous alumina was 4×10^<10>cm^2 under an optimized condition. GaAs substrates covered by the porous alumia was then etched using BCl_3 in a dry-etching system. After removing porous alumina, high-odered hole arrays were formed on GaAs substrates. The average diameter of hole array was 23 nm, and the density of hole array was 4×10^<10>cm^2.
InAs quantum dots were finally grown by molecular-beam epitaxy on the patterned GaAs substrates. It was found that some of InAs dots were selectively grown at the bottom of hole arrays. The average diameter of InAs quantum dots was 15 nm.
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