| Project/Area Number |
14350033
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
OHTSU Motoichi Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Professor, 大学院・総合理工学研究科, 教授 (70114858)
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| Co-Investigator(Kenkyū-buntansha) |
興梠 元伸 東京工業大学, 総合理工学研究科, 助手 (10251662)
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| Project Period (FY) |
2002 – 2003
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| Project Status |
Completed (Fiscal Year 2003)
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| Budget Amount *help |
¥16,800,000 (Direct Cost: ¥16,800,000)
Fiscal Year 2003: ¥8,100,000 (Direct Cost: ¥8,100,000)
Fiscal Year 2002: ¥8,700,000 (Direct Cost: ¥8,700,000)
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| Keywords | Optical near field / Optical switch / Pulsed light / Figure of merit / Waveguide / Photonic integrated circuit / Plasmon / Etching |
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| Research Abstract |
Following two subjects were carried out simultaneously in order to utilize the "nanophotonic integrated circuit" due to optical near fields as a basic device in the next-generation photonic systems.
[1]Investigation on the mechanism of optical near field energy transfer in a nanophotonic integrated circuit:
Using CuCl quantum dots as reference specimen, optical near fields were generated by illuminating a pulsed laser light. Operation of nanophotonic switch was confirmed due to optical near field energy transfer between three quantum dots with the size ratio of 1:√2:2. Rise-and fall-times of output signal were evaluated as 50-90ps and 1-2ns, respectively. The figure of merit of this device was confirmed to be 10-100 times larger than that of conventional photonic devices. Nanometric ZnO particles, to be used for nanophotonic devices and integrated circuits, were fabricated with high accuracies in their size and position by utilizing nonadiabatic process in optical near field chemical vap
… More
or deposition. That is, nanometric Zn particles with the size of 5nm was successfully fabricated to be oxidized to form nanometric ZnO particles. Further, optical near field energy transfer between ZnO were observed.
[2]Connection with external circuits:
Gold metallic nanowire was fixed on a wedged silicon substrate, by which a plasmon waveguide with 150nm-width was fabricated in order to transfer the TM plasmon mode. Transmission length was longer than 3μm, which was as long as the expected value. For lower loss configuration, an array of nanometric metallic particles was fixed to form a novel waveguide, by which the transmission loss was decreased to 1/10. Further, a focuser was fabricated by utilizing nanometric metallic particles in order to couple the surface plasmon to the input port of the above mentioned array. To explore the possibility of parallel operation of nanometric waveguides, a zig-zag configuration of the above mentioned array was fabricated. Transmisson loss as low as the linear configuration was confirmed experimentally.
By the experimental results summarized above, possibility of using the nanophotonic integrated circuits for the next generation photonic system was confirmed. Less
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