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Fabrication of Nanocrystal Memories by Position Controlled Deposition of Ge Nanocrystals

Research Project

Project/Area Number14350183
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionThe University of Electro-Ccmmunications

Principal Investigator

NOZAKI Shinji  The University of Electro-Communications, Faculty of Electro-Communications, Professor, 電気通信学部, 教授 (20237837)

Co-Investigator(Kenkyū-buntansha) UCHIDA Kazuo  The University of Electro-Communications, Faculty of Electro-Communications, Associate Professor, 電気通信学部, 助教授 (80293116)
Project Period (FY) 2002 – 2004
Project Status Completed(Fiscal Year 2004)
Budget Amount *help
¥14,900,000 (Direct Cost : ¥14,900,000)
Fiscal Year 2004 : ¥2,500,000 (Direct Cost : ¥2,500,000)
Fiscal Year 2003 : ¥4,900,000 (Direct Cost : ¥4,900,000)
Fiscal Year 2002 : ¥7,500,000 (Direct Cost : ¥7,500,000)
KeywordsFIB / silicon / germanium / nanocrystal / memory / MBE / MOS / position-controlled deposition / 電子ビームリソグフィー / 光酸化 / ケルビンプローブ / AFM
Research Abstract

In this research project, we made an attempt to make a nanocrystal memory using a silicon substrate on which Ge nanocrystalls are deposited with a good control of the positioning and size. Dr. Berbezier at CRMC2, Marseille, France provided the Si substrates with Ge nanocrystals deposited by MBE, and we made MOS capacitors by embedding Ge nanocrsytals in SiO_2. The most important but difficult part of the project is to deposit Ge nanocrstals with a good control of positioning and size. Dr. Berbezier and her group members developed a technique to grow the Ge nanocrstals on the FIB-patterned Si substrates. In this technique, the Ga is implanted in the Si substrates by focused ion beam (FIB) and farms the defective area locally. It was found the Ge selectively grew on the damaged area in the MBE growth of Ge. Using this selective epitaxy of Ge, Ge nanocrystals can be arranged. With the optimized growth condition, Dr. Berbezier successfully achieved an array of Ge nanocrystals on Si. Howeve … More r, the array was not one monolayer, and some Ge nanocrystals were stacked. Such a sample did not show a significant flatband voltage shift by injecting electrons in Ge nanocrystals.
Nozaki and his group proposed a technique to form a high-density of Ge nanocrystals in a monolayer. In this technique, the Ge nanocrystals were deposited on the tunnel oxide by the gas evaporation with a supersonic jet nozzle. Using this deposition method, the Ge nanocrystals with a good uniformity in the size were obtained. They are, however, stacked. The Ge nanocrystals were annealed to remove the extra naocrystals on the monolayer. Because of strength of bonding between Ge nanocrystals and SiO_2, one monolayer of Ge nanocrystals remained without losing any nanocrystals on SiO_2 after complete removal of the extra nanocrystals. Then, the Ge nanocrystals were exposed to UV light for photo-oxidation, which electrically isolates the Ge nanocrystals by oxidizing the Ge nanocrystals. After depositing the control oxide on the Ge nanocrystals, the MOS capacitors with the Ge nanocrystals as a floating gate were fabricated. The C-V showed the hysteresis to confirm the electron injection in the nanocrystals. Although the gate electrode with the Ge nanocrystals proved to be useful in the nanocrystal memories, the further improvement of charge retention is required for practical application. Less

Report

(4results)
  • 2004 Annual Research Report   Final Research Report Summary
  • 2003 Annual Research Report
  • 2002 Annual Research Report

Research Products

(47results)

All 2004 2003 2002 Other

All Journal Article Book Publications

  • [Journal Article] Optical nonlineality of monodispersed, capped ZnS quantum particles2004

    • Author(s)
      V.V.Nikesh
    • Journal Title

      Appl. Phys. Lett. 84

      Pages : 4602-4604

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Growth and characterization of p-type InGaAs on InP subtrates by LP-MOCVD using a new carbon-dopant source, CBrCl32004

    • Author(s)
      K.Uchida
    • Journal Title

      J. Crystal Growth 272

      Pages : 658-663

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Optical nonlineality of monodispersed, capped ZnS quantum particles2004

    • Author(s)
      V.V.Nikesh, A.Dharmadhikari, H.Ono, S.Nozaki, G.R.Kumar, S.Mahamuni
    • Journal Title

      Appl.Phys.Lett. 84(23)

      Pages : 4602-4604

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Growth and characterization of p-type InGaAs on InP substrates by LP-MOCVD using a new carbon-dopant source, CBrCl_32004

    • Author(s)
      K.Uchida, K.Takahashi, S.Kabe, S.Nozaki, H.Morisaki
    • Journal Title

      J.Crystal Growth 272

      Pages : 658-663

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Quantum confinement effect in HgTe nanocrystals and visible luminescence2004

    • Author(s)
      S.Rath, A.K.Dash, S.N.Sahu, S.Nozaki
    • Journal Title

      International Journal of Nanoscience 3(3)

      Pages : 393-401

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Substrate Nanostructuration : Self-assembling and Nanoparticles, (European Materials Research Society Symposia Proceedings 174, Proceedings of Symposium T of the 2004 European Materials Research Society Meeting, Strasbourg, France, 24-28 May 2004).2004

    • Author(s)
      I.Berbezier, A.Pimpinelli, R.Hull, S.Nozaki, Editors
    • Journal Title

      Superlattices and Microstructures (Special Issue) 36(1-3)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Sb surface segregation during epitaxial growth of SiGe hetero-structures : The effects of Ge composition and biaxial stress2004

    • Author(s)
      A.Portavoce
    • Journal Title

      Physical Review B Vol.69

      Pages : 155414-1-155414-5

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Sb lattice diffusion in Si_<1-x>Ge_x/Si(001) heterostructure : Chemical and stress effects2004

    • Author(s)
      A.Portavoce
    • Journal Title

      Physical Review B Vol.69

      Pages : 155415-1-155415-6

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Sb-surfactant-mediated growth of Si and Ge nanostructures2004

    • Author(s)
      A.Portavoce
    • Journal Title

      Physical Review B Vol.69

      Pages : 155416-1-155416-8

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Electrical study of MOS structure with Ge embedded in SiO_2 as Floating gate for nonvolatile memory2004

    • Author(s)
      M.Kanoun
    • Journal Title

      Superlattice and Microstructures Vol.36

      Pages : 143-148

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Self-patterned Si surfaces as templates for Ge islands ordering2004

    • Author(s)
      A.Ronda
    • Journal Title

      Physica E Vol.23

      Pages : 370-376

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Dopant abruptness in strained Si_<1-x>Ge_x heterostructures2004

    • Author(s)
      N.L.Rowell
    • Journal Title

      Journal of Vacuum Science and Technology A Vol.22(3)

      Pages : 939-942

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Effects of self-patterned Si_<1-x>Ge_x template layer on the structural and optical properties of Ge dots2004

    • Author(s)
      B.Ismail
    • Journal Title

      Journal of Vacuum Science and Technology B Vol.23(1)

      Pages : 242-246

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Ge dot organization on Si substrates patterned by focused ion beam2004

    • Author(s)
      A.Karmous
    • Journal Title

      Applied Physics Letters Vol.85(26)

      Pages : 6401-6403

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy : Effect of Ge concentration and biaxial stress2004

    • Author(s)
      A.Portavoce
    • Journal Title

      Journal of Applied Physics Vol.96(6)

      Pages : 3158-3163

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Electrically active defects induced by sputtering deposition on silicon : The role of hydrogen2004

    • Author(s)
      F.Volpi
    • Journal Title

      Journal of Applied Physics Vol.95(9)

      Pages : 4752-4760

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Heavily carbon doping of GaAs by MOVPE using a newdopant source CBrCl3 and characterization of the epilayers2003

    • Author(s)
      K.Uchida
    • Journal Title

      J. Crystal Growth 248

      Pages : 124-129

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Metal organic vapor phase epitaxial growth of heavily carbon-doped GaAs using a dopant source of CCl3 and quantitative analysis of the compensation mechanism in the epilayers2003

    • Author(s)
      S.Bhunia
    • Journal Title

      J. Appl. Phys. 93

      Pages : 1613-1619

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Real-time measurement of rocking curves during MOVPE growth of GaXIn1-XP/GaAs2003

    • Author(s)
      S.Bhunia
    • Journal Title

      Appl. Surface Science 216

      Pages : 382-387

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Quantum confinement effect in HgTe nanocrystals and visible luminescence2003

    • Author(s)
      S.Rath
    • Journal Title

      International Journal of Nanoscience 3

      Pages : 393-401

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Heavily carbon doping of GaAs by MOVPE using a newdopant source CBrCl_3 and characterization of the epilayers2003

    • Author(s)
      K.Uchida, S.Bhunia, N.Sugiyama, M.Furiya, M.Katoh, S.Katoh, S.Nozaki, H.Morisaki
    • Journal Title

      J.Crystal Growth 248

      Pages : 124-129

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Metal organic vapor phase epitaxial growth of heavily carbon-doped GaAs using a dopant source of CCl_3 and quantitative analysis of the compensation mechanism in the epilayers2003

    • Author(s)
      S.Bhunia, K.Uchida, S.Nozaki, N.Sugiyama, M.Furiya, H.Morisaki
    • Journal Title

      J.Appl.Phys. 93(3)

      Pages : 1613-1619

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Real-time measurement of rocking curves during MOVPE growth of Ga_xIn_<1-x>P/GaAs2003

    • Author(s)
      S.Bhunia, T.Kawamura, Y.Watanabe, S.Fujikawa, J.Matsui, Y.Kagoshima, Y.Tsusaka, K.Uchida, S.Nozaki, H.Morisaki
    • Journal Title

      Appl.Surface Science 216

      Pages : 382-387

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] The effects of Sb on the oxidation of Ge quantum dots2003

    • Author(s)
      Y.S.Lim, F.Bassani, A.Portavoce, A.Ronda, S.Nozaki, I.Berbezier
    • Journal Title

      Materials Science and Engineering B101 I.(1-3)

      Pages : 190-193

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] EMRS 2002 Symposium S, Micro- and Nano-Structured Semiconductors2003

    • Author(s)
      I.Berbezier, A.Nassiopoulou, S.Nozaki ed.
    • Journal Title

      Materials Science and Engineering (Special Issue) B101(1-3)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Electron transport in Ge nanocrystalline films deposited using the cluster beam evaporation technique2002

    • Author(s)
      S.Banerjee
    • Journal Title

      J. Appl. Phys. 91

      Pages : 4307-4311

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] A photo-oxidation generated low-k dielectric film deposited by reactive evaporation of SiO2002

    • Author(s)
      J.J.Si
    • Journal Title

      Microelectronic Engineering 60

      Pages : 313-321

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Electron transport in Ge nanocrystalline films deposited using the cluster beam evaporation technique2002

    • Author(s)
      S.Banerjee, S.Nozaki, H.Morisaki
    • Journal Title

      J.Appl.Phys. 91(7)

      Pages : 4307-4311

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] A photo-oxidation generated low-k dielectric film deposited by reactive evaporation of SiO2002

    • Author(s)
      J.J.Si, Y.Show, S.Banerjee, H.Ono, K.Uchida, S.Nozaki, H.Morisaki
    • Journal Title

      Microelectronic Engineering 60

      Pages : 313-321

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Book] Substrate Nanostructuration : Self-assembling and Nanoparticles2004

    • Author(s)
      I.Berbezier
    • Publisher
      Special Issue of Superlattices and Microstructures 36 (1-3)
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Book] Encyclopedia of Nanoscience and Nanotechnology vol.3 [S.Nozaki, S.Sato, and H.Morisaki, "Germanium Nanocrystals," pp.805-820]2004

    • Author(s)
      H.S.Nalwa ed.
    • Total Pages
      805-820
    • Publisher
      American Scientific Publisher
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Book] EMRS 2002 Symposium S, Micro- and Nano-Structured Semiconductors2003

    • Author(s)
      I.Berbezier
    • Publisher
      Special Issue, Materials Science and Engineering B101 (1-3)
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Publications] Y.S.Lim: "The effects of Sb on the oxidation of Ge quantum dots"Materials Science and Engineering B. 101(1-3). 190-193 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] I.Berbezier(編集): "Ge dots self-assembling : Surfactant mediated growth of Ge on Si stress-induced kinetic instabilities"Applied Physics Letters. 83(23). 4833-4835 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] A.Ronda: "Experimental insights into Si and SiGe growth instabilities : Influence of kinetic growth parameters and substrate orientation"Materials Science and Engineering B. 101(1-3). 95-101 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] A.Portavoce: "Effects of Sb on Si/Si and Ge/Si growth process"Materials Science and Engineering B. 101(1-3). 181-185 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] F.Volpi: "Hole trapping in self-assembled SiGe quantum nanostructures"Materials Science and Engineering B. 101(1-3). 338-344 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] I.Berbezier: "Morphological evolution of SiGe layers"Surface Science. 531(3). 231-243 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.S.Nalwa(編集): "Encyclopedia of Nanoscience and Nanotechnology"American Scientific Publisher. 10,000 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] I.Berbezier: "Micro- and Nano-Structured Semiconductors (Special Issue, Materials Science and Engineering)"Elsevier. 347 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] S.Banerjee: "Electron transport in Ge nanocrystalline films deposited using the cluster beam evaporation technique"Journal of Applied Physics. 91(7). 4307-4311 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] J.J.Si: "A Photo-oxidation generated low-k dielectric film deposited by reactive evaporation of SiO"Microelectronic Engineering. 60. 313-321 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Nozaki: "Ultralow K nanoporous silica by oxidation of silicon nanocrystals"International Interconnect Technology Conference, San Francisco, CA, June 3 -5,2002,Proceedings. 69-71 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.S.Lim: "Oxidation study on Ge quantum dots"European Materials Research Society 2002 Spring Meeting, Strasbourg, France, June 18-21. (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] A.Portavoce: "Auger spectroscopy thermodesorption of Sb on Sil-xGex layers grown on Si (100) substrates"Surface Science. 519. 185-191 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] A.Portavoce: "Sb-surfactant mediated growth of Ge nanostructures"Materials Science and Engineering B. 89(1-3). 205-210 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] 野村政人: "超音速ジェットノズルによるシリコン超微粒子浮遊ゲートMOSキャパシターの作製"応用物理学会分科会シリコンテクノロジーNo.46「量子サイズシリコン系素子-新機能と応用-」特集号. 39-42 (2002)

    • Related Report
      2002 Annual Research Report

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Published : 2002-04-01   Modified : 2016-04-21  

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