| Project/Area Number |
14350184
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Shizuoka University |
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Principal Investigator |
MINAKATA Makoto Shizuoka University, Research Institute of Electronics, Professor, 電子工学研究所, 教授 (80174085)
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| Co-Investigator(Kenkyū-buntansha) |
YONEYAMA Satoshi Shizuoka University, Research Institute of Electronics, Assistant Professor, 電子工学研究所, 助手 (60345808)
符 徳勝 静岡大学, 産業技術総合研究所, 研究員
鈴木 久男 静岡大学, 工学部, 助教授 (70154573)
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| Project Period (FY) |
2002 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥14,900,000 (Direct Cost: ¥14,900,000)
Fiscal Year 2004: ¥2,700,000 (Direct Cost: ¥2,700,000)
Fiscal Year 2003: ¥4,000,000 (Direct Cost: ¥4,000,000)
Fiscal Year 2002: ¥8,200,000 (Direct Cost: ¥8,200,000)
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| Keywords | Nanometer Scale Domain Inversion / Circular Electrode / Resistivity / LiNOb_3 / Threshold of Domain Inversion / Current of Domain Inversion / Dicing Saw / Ridge Type Waveguide / 電界強度比 / Full Cover Electrode法 / 円形電極 / 光照射分極反転 / マイクロドメイン / 核移動法 / LiTaO_3 / フォトンミキシング / デジタルイメージ変換 |
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| Research Abstract |
In this research, the following results were achieved since it was concerned with the domain inversion and microfabrication technologies those became important in malting the proposed device.
1)The proposal and the proof of the new domain inversion control method : A new circular form full cover electrode (FCE) method was proposed to fabricate periodic domain inversion in the LiNbO_3 (LN) crystal with a period of 2 μm or less. First of all, it was suggested that the circular electrode provided point contact with the crystal and theoretical analysis was perfornned for the effectiveness of circular electrode to produce small polarization inversion Next, circular electrode of 2 μm period was produced on the resist patterned by 2-beam laser interference exposure method and the pulse voltage application domain inversion experiment was conducted in order to prove the method. As a result, 2μm periodic domain inversion in a 500 μm thick LN crystal was fabricated. Moreover, though it was a part,
… More
0.15 μm domain inversion was achieved using this new method and the effectiveness of the proposed circular for FCE method was proved.
2)The relation between specific resistance and polarization inversion characteristic of the crystal : The polarization inversion characteristic was examined by the fabrication of small size domain inversion using the LN crystal with controlled specific resistance, ρ. For black-LN (B-LN) crystal, with ρ value fair orders of magnitude lower than of normal LN crystal, domain inversion threshold voltage (V_<th>) was 〜100V and was proportional to ρ^<1/2>. Moreover, uniform dot patterns were fabricated when 100V was applied to B-LN. It was clarified that small domain inversion structure can be fabricated by applying lower threshold voltage which is 1/100 or less times compared to the normal LN crystal using controlled specific resistance crystals.
3)Fabrication of the ridge type optical waveguide using the dicing saw : A 5mm width and 50 mm length rectangular optical waveguide was fabricated using a dicing saw. The rotational speed and the sending speed of the blade were 30,000 rpm and 0.3 mm/sec, respectively. The insertion loss and the propagation loss of the optical waveguide were measured using a He-Ne laser. The measured loss values were 1 dB/cm and 7 dB, respectively. The present characteristics of the optical waveguide are not enough. However, optimized processing conditions could show the possibility of better optical waveguide fabrication. Less
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