Development of New Methods for Structural Analysis of Silicon/Oxide Interface and Silicon Surface
| Project/Area Number |
14550792
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
工業物理化学
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| Research Institution | Osaka University |
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Principal Investigator |
MATSUMURA Michio Osaka University Research Center for Solar Energy Chemistry, Professor, 太陽エネルギー化学研究センター, 教授 (20107080)
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| Project Period (FY) |
2002 – 2003
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| Project Status |
Completed (Fiscal Year 2003)
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| Budget Amount *help |
¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2003: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 2002: ¥2,600,000 (Direct Cost: ¥2,600,000)
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| Keywords | Silicon / Oxide / Interface / Surface / Electrochemistry / Analytical Method |
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| Research Abstract |
1. Establishment of the experimental conditions.
When Si/Si0_2 samples are immersed in an aqueous HF solution, anodic current flows at the time Si surface is exposed to the solution. We found that under certain conditions, the electrochemical measurement gives very reproducible results.
2. Electrochemical analysis of the Si/SiO_2 interface prepared under different conditions.
The Si/SiO_2 samples prepared under different conditions show different electrochemical properties. This finding indicated that' the electrochemical method is very sensitive to the interfacial structure.
3. Analytical results for the Si/SiO_2 samples with different crystalline orientations.
The electrochemical results for the Si/SiO_2 samples showed certain relationship with the crystalline orientation of the Si wafer Based on the structural model for Si/Si0_2 interface, we succeeded in the explanation of the dependence on the crystalline orientation. In addition, we succeeded to correlate the current to the annealing of the samples. These observations verify the usefulness of the newly developed method for the analysis of the Si/Si0_2 interfacial structure.
4. Development of a new method for the structural analysis of the Si surface.
We found that Si surface terminated with hydrogen is oxidized in a layer-by-layer manner, when Si surface terminated with hydrogen is electrochemically oxidized. We also found that the current -voltage curve is very sensitive to the conditions of the Si sample. On the basis of the finding, we proposed a new method for the structural analysis of Si samples.
5. Contamination of Si surface by organic contaminants included in air and oxidation of Si surface triggered by the contaminants.
We found that the contamination of Si surface starts by forming islands of organic materials included in air. The contaminants triggered the oxidation of Si.
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Report
(3 results)
Research Products
(9 results)
