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Crystallinity Control of Silicon Thin Films for High-Efficiency Solar Cells by Two-Step Growth Method

Research Project

Project/Area Number 14580533
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field エネルギー学一般
Research InstitutionTokyo University of Agriculture and Technology

Principal Investigator

KAMISAKO Koichi  Tokyo University of Agriculture and Technology, Faculty of Technology, Associate Professor, 工学部, 助教授 (40092481)

Project Period (FY) 2002 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 2003: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 2002: ¥1,200,000 (Direct Cost: ¥1,200,000)
Keywordsmicrocrystalline silicon / hydrogen radical CVD / two-step growth / reflectivity / surface roughness / XRD / 微結晶シリコン薄膜 / 水素ラジカルCVD法 / 紫外線反射率 / 薄膜構造 / バイアス電圧印加
Research Abstract

To control crystallinity of silicon thin films, microcrystalline silicon thin films were prepared by hydrogen radical CVD method and their structure and properties were evaluated. Especially, to clarify effect of amorphous initial layer and crystalline growth process, crystallinity and electrical properties of thin films were estimated in detail. Substrate dependence of film structure was compared by using glass and Al substrates. Moreover, two-step growth was done by changing gas phase reaction with substrate position. As a result, the following matters were clarified.
The microcrystalline films prepared at 200℃ showed (111) preferential orientation and the grain size estimated from XRD was 30nm in maximum. However, the average grain size obtained from AFM was changed from 90nm to 270nm and simultaneously the surface roughness was increased. These results suggest that microcrystalline grains grow, collide and coaggregate. The vertical electrical conductivity was very small compared to the lateral one and nearly equal to the values of amorphous films. This result shows the effect of amorphous initial layer. By raising the substrate temperature from 200 to 350℃, the thickness of amorphous initial layer was decreased. The experiments of two-step growth showed that, by regulating SiH4 flow rate, growth rate can be increased and crystallinity of films can be controlled.

Report

(3 results)
  • 2003 Annual Research Report   Final Research Report Summary
  • 2002 Annual Research Report
  • Research Products

    (12 results)

All 2004 2003 2002 Other

All Journal Article (8 results) Publications (4 results)

  • [Journal Article] Bias Potential Dependence of Microcrystalline Silicon Structure in Hydrogen Radical CVD2004

    • Author(s)
      M.Jeon, et al.
    • Journal Title

      Technical Digest of 14th International Photovoltaic Science and Engineering Conference

      Pages: 245-246

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Bias Potential Dependence of Microcrystalline Silicon Structure in Hydrogen Radical CVD2004

    • Author(s)
      M.Jeon, K.Kimura, K.Kamisako
    • Journal Title

      Technical Digest of 14th International Photovoltaic Science and Engineering Conference (Bangkok, Jan 2004)

      Pages: 245-246

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Film Structure Dependence of Electrical Properties of Microcrystalline Silicon2003

    • Author(s)
      Y.Yoshioka, et al.
    • Journal Title

      Proc.3^<rd> World Conference on Photovoltaic Energy Conversion

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Film Structure Dependence of Electrical Properties of Microcrystalline Silicon2003

    • Author(s)
      Y.Yoshioka, M.Jeon, T.Inoshita, K.Kamisako
    • Journal Title

      Proc.3^<rd> World Conference on Photovoltaic Energy Conversion (Osaka, May 2003) 5P-A9-20

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Influence of Film Thickness on Structural Properties of Microcrystalline Films2002

    • Author(s)
      Y.Yoshioka, et al.
    • Journal Title

      Proc.29^<th> IEEE Photovoltaic Specialists Conference

      Pages: 1266-1269

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Substrate Dependence of Crystallization of Silicon Films Prepared by Hydrogen Radical CVD Method2002

    • Author(s)
      K.Kimura, et al.
    • Journal Title

      Proc.29^<th> IEEE Photovoltaic Specialists Conference

      Pages: 1270-1273

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Influence of Film Thickness on Structural Properties of Microcrystalline Films2002

    • Author(s)
      Y.Yoshioka, Y.Matsuyama, K.Kamisako
    • Journal Title

      Proc.29^<th> IEEE Photovoltaic Specialists Conference (New Orleans, May 2002)

      Pages: 1266-1269

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Substrate Dependence of Crystallization of Silicon Films Prepared by Hydrogen Radical CVD Method2002

    • Author(s)
      K.Kimura, T.Shirasawa, N.Kobayashi, K.Kamisako
    • Journal Title

      Proc.29^<th> IEEE Photovoltaic Specialists Conference (New Orleans, May 2002)

      Pages: 1270-1273

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Yoshinori Yoshioka: "Film Structure Dependence of Electrical Properties of Microcrystalline Silicon"Proc.3^<rd> World Conference on Photovoltaic Energy Conversion. 5P-A9-20 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Minsung Jeon: "Bias Potential Dependence of Microcrystalline Silicon Structure in Hydrogen Radical CVD"Technical Digest of International PVSEC-14. 245-246 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Yoshinori Yoshioka: "Influence of Film Thickness on Structural Properties of Microcrystalline Silicon Films"Proc.29th IEEE Photovoltaic Specialist Conference. 1266-1269 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Kazuhiro Kimura: "Substrate Dependence of Crystallization of Silicon Films Prepared by Hydrogen Radical CVD Method"Proc.29th IEEE Photovoltaic Specialist Conference. 1270-1273 (2002)

    • Related Report
      2002 Annual Research Report

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Published: 2002-04-01   Modified: 2016-04-21  

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