無触媒窒化物系ナノワイヤの有機金属化合物気相成長と太陽光発電素子応用
| Project/Area Number |
14F04366
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Single-year Grants |
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| Section | 外国 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nagoya University |
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Principal Investigator |
天野 浩 名古屋大学, 未来材料・システム研究所, 教授 (60202694)
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| Co-Investigator(Kenkyū-buntansha) |
BAE SI-YOUNG 名古屋大学, 未来材料・システム研究所, 外国人特別研究員
BAE Si-Young 名古屋大学, 工学(系)研究科(研究院), 外国人特別研究員
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| Project Period (FY) |
2014-04-25 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 2015: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 2014: ¥700,000 (Direct Cost: ¥700,000)
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| Keywords | Gallium Nitride / nanowire / nanorod / solar cells / core-shell / MOCVD / nonpolar / Si substrate / InGaN / ナノワイヤ / 太陽電池 |
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| Outline of Annual Research Achievements |
The main purpose of this research is to study the photovoltaic effect of InGaN/GaN-based nanowire solar cells. To grow GaN core nanostructures, selective area growth was used, thereby resulting in GaN nanowires with high aspect ratio and high quality. Afterwards, the research has been focused on the growth of InGaN shell structures acting as an light absorption layer. To characterize the emission properties of grown core-shell InGaN nanowires, several kinds of spacial high-resolution methods have been used such as TEM and CL. Based-on these results, we have reported five joural papers and six international conferences. These publications cover the advanced growth technology to obtain high quality of GaN nanorods not only with MOCVD but also with other epitaxy tools such as MBE and HVPE. Indeed, extensive trials have been made to find the appropriate growth condition for growing uniform GaN nanowire. To find the feasiblity of the growth on novel materials, several kinds of substancs were attempted such as sapphire, silicon, and silica substrates. The emission characteristics of InGaN shells indirectly reflected the absorption properties of InGaN core-shell nanowires. Furthermore, a simulation based on the experimental resutls showed more promise potential of InGaN core-shell nanowwire solar cells. Thus, we believe that this study will really contribute to the development of high effiecicy nanowire solar cell in the near future.
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| Research Progress Status |
27年度が最終年度であるため、記入しない。
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| Strategy for Future Research Activity |
27年度が最終年度であるため、記入しない。
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Report
(2 results)
Research Products
(14 results)
