電界効果トランジスタゲートスタック絶縁膜形成機構と絶縁破壊機構統合モデルの研究
| Project/Area Number |
14J04955
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Single-year Grants |
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| Section | 国内 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Tohoku University |
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Principal Investigator |
唐 佳芸 東北大学, 工学研究科, 特別研究員(DC2)
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| Project Period (FY) |
2014-04-25 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 2015: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2014: ¥900,000 (Direct Cost: ¥900,000)
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| Keywords | Si oxide / decomposition / XPS / STM / real-time / strain / defect / interface oxidation / Si(111) / Si(001) / surface oxidation / oxide decomposition / point defect |
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| Outline of Annual Research Achievements |
The rapid temperature oxidation kinetics on Si(001) surfaces was investigated by real-time X-ray photoelectron spectroscopy (XPS) using synchrotron radiation to observe the SiO2 growth rate and interfacial strain simultaneously during oxidation. It was observed that the SiO2 growth rate was enhanced 5.0 times by cooling temperature. The SiO2 oxide growth kinetics is interpreted well by extending the unified Si oxidation reaction model, where oxide growth rate dRSiO2/dt is in proportion to the increase of the interfacial strain. This implies that further oxidation is prone to occur around the place where oxides are newly grown at low temperature, leading to a roughening of the SiO2/Si interface morphology. The thermal decomposition kinetics of very thin oxide layers grown on Si(001) and Si(111) surfaces were investigated experimentally by XPS, ultraviolet photoelectron spectroscopy and scanning tunneling microscopy to clarify the void nucleation and growth reaction mechanisms from a viewpoint of the decomposition-induced strain. It was observed that the amount of strained Si atoms increased in proportion to the amount of oxide decomposed during the void nucleation. This was interpreted by using a proposed decomposition model, where there is an undershoot profile of the strain at the periphery of the accumulated void area and the magnitude of the undershoot strain increased in proportion to the amount of vacancies.Based on the above studies, the unified Si oxidation reaction model consist of both the oxide growth and oxide decomposition was verified and further extended.
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| Research Progress Status |
27年度が最終年度であるため、記入しない。
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| Strategy for Future Research Activity |
27年度が最終年度であるため、記入しない。
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Report
(2 results)
Research Products
(10 results)
