| Project/Area Number |
15340099
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Condensed matter physics I
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| Research Institution | OKAYAMA UNIVERSITY |
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Principal Investigator |
KAMIURA Yoichi OKAYAMA UNIVERSITY, FACULTY OF ENGINEERING, PROFESSOR, 大学院・自然科学研究科, 教授 (30033244)
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| Co-Investigator(Kenkyū-buntansha) |
YAMASHITA Yoshifumi OKAYAMA UNIVERSITY, FACULTY OF ENGINEERING, LECTURER, 大学院・自然科学研究科, 講師 (80251354)
ISHIYAMA Takeshi OKAYAMA UNIVERSITY, FACULTY OF ENGINEERING, ASSISTANT, 大学院・自然科学研究科, 助手 (40314653)
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| Project Period (FY) |
2003 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥13,300,000 (Direct Cost: ¥13,300,000)
Fiscal Year 2005: ¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 2004: ¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 2003: ¥8,900,000 (Direct Cost: ¥8,900,000)
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| Keywords | HYDROGEN / CHARGE STATE / ATOMIC DISPLACEMENT / DEFECT / SILICON / COMPOUND SEMICONDUTORS / DLTS / IR ABSORPTION |
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| Research Abstract |
In this research, we have studied the electronic state and atomic configuration of hydrogen-platinum (H-Pt) complex defects in Si, vibrational and rotational motion of hydrogen around the Pt impurity, hydrogen indiffusion into strained SiGe films and the influence of hydrogen on the strain relaxation of SiGe films using isothermal DLTS, IR, ESR and SR techniques, and have obtained the following results.
1.We have determined the symmetry and structure of H-Pt defects by isothermal DLTS, ESR techniques. We have also studied the stress dependency of defect electronic levels, and have found that defects reorient under uniaxial stress. We have determined the stress coefficient of the energy difference between stable and metastable configurations of defects. In addition, we have studied the effect of charge state on the activation energy for hydrogen local motion around Pt, and have found that hydrogen motion is enhanced when the electronic level of defects is not occupied by an electron.
2.We have experimentally studied the splitting of IR absorption peaks due to H-Pt defects in Si under uniaxial stress, and have observed a peak at 1880.7 cm^<-1> of the PtH defect and peaks at 1873.1 and 1891.9 cm^<-1> of the PtH_2 defect. The intensity ratios of peaks split under a stress of 0.16 GPa are nearly equal to those predicted by theory.
3.We have found that hydrogen atoms incorporate more easily into the compressively strained SiGe film on Ge substrate than the tensile strained SiGe film on Si substrate. We have also found that the pre-incorporated hydrogen atoms enhanced the strain relaxation of the SiGe film on Ge during subsequent thermal treatment. Such a result that strain of lattice affects the dynamics of hydrogen is an accomplishment beyond the expectation in the first research project.
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