Controlling of UV light by using III-nitride based photonic crystals with nano-antenna
| Project/Area Number |
15360008
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Mie University |
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Principal Investigator |
HIRAMATSU Kazumasa Mie University, Department of Electrical and Electronic Engineering, Professor, 工学部, 教授 (50165205)
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| Co-Investigator(Kenkyū-buntansha) |
MIYAKE Hideto Mie University, Department of Electrical and Electronic Engineering, Associate Professor, 工学部, 助教授 (70209881)
MOTOGAITO Atsushi Mie University, Department of Electrical and Electronic Engineering, Research Associate, 工学部, 助手 (00303751)
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| Project Period (FY) |
2003 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥13,400,000 (Direct Cost: ¥13,400,000)
Fiscal Year 2005: ¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 2004: ¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 2003: ¥9,800,000 (Direct Cost: ¥9,800,000)
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| Keywords | III-nitride semiconductors / photonic crystals / nano antenna / ultraviolet light / gratings / electron beam lithography / reactive ion etching / AlGaN epitaxial growth / 窒化ガリウム / ナノ構造 / 反射防止構造 / 電子ビームリソグタフィ / 自然形成 / 電子ビームリソグラフィ |
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| Research Abstract |
Photonic crystals have the distribution of index which is as same as light wavelength or smaller than light wavelength. Its periodicity is able to control optical constant such as transmission, reflectance and absorption, or polarization. In this research, the fabrication of photonic crystas with III-nitride semiconductors, which is transparent for visible and ultraviolet and studied on light emitting devices or detectors, and the characteristics of transmission, reflectance, absorption and polarization are cleared. Furthermore, the effect of controlling of UV light is confirmed by UV detectors.
Under the backgrounds and purposes, we obtained the following results.
1. Fabrication of nanotips of GaN and SiO_2 by using reactive ion etching and controlling of visible light
2. Fabrication of pyramid structure of Si by using reactive ion etching
3. Fabrication of stripe structure of AlN and crystal growth of high quality AlGaN epitaxial layers
4. Characterization of GaN and AlGaN UV detectors
5. Fabrication of nano order pattern by using electron beam lithography
6. Fabrication of gratings on polymer films by using electron beam lithography and plane light emitting of LED
Based on these results, we believe that high performance UV LED and UV detectors with controlling UV light can be realized.
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Report
(4 results)
Research Products
(36 results)
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[Publications] H.Miyake, H.Yasukawa, Y.Kida, K.Ohta, Y.Shibata, A.Motogaito, K.Hiramatsu, Y.Ohuchi, K.Tadatomo, Y.Hamamura, K.Fukui: "High performance of Schottky detectors(265-100nm) using n-Al_<0.5>Ga_<0.5>N on AlN epitaxial layer"Physica Status Solidi(a). 200,No1. 151-154 (2003)
