| Project/Area Number |
15360016
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Tohoku University |
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Principal Investigator |
SAMUKAWA Seiji Tohoku University, Institute of Fluid Science, Professor, 流体科学研究所, 教授 (30323108)
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| Co-Investigator(Kenkyū-buntansha) |
HANE Kazuhiro Tohoku University, School of Engineering, Professor, 大学院・工学研究科, 教授 (50164893)
ONO Takahito Tohoku University, School of Engineering, Associate Professor, 大学院・工学研究科, 助教授 (90282095)
KONDO Michio National Institute of Advanced Industrial Science and Technology, Research Initiative for Thin Film Silicon Solar Cells, Deputy Director, 薄膜シリコン系太陽電池研究開発ラボ, 副ラボ長 (30195911)
KUBOTA Tomohiro Tohoku University, Institute of Fluid Science, Research Associate, 流体科学研究所, 助手 (70322683)
熊谷 慎也 松下電器産業株式会社, 先端技術研究所, 研究員 (70333888)
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| Project Period (FY) |
2003 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥15,500,000 (Direct Cost: ¥15,500,000)
Fiscal Year 2005: ¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 2004: ¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 2003: ¥11,200,000 (Direct Cost: ¥11,200,000)
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| Keywords | neutral beam / etching / negative ion / silicon oxynitride / gate electrode etching / low-k film / fin-type vertical MOSFET / nanocolumn / 表面改質 / カーボンナノチューブ / 有機分子デバイス / 高誘電率膜 / 起立ゲート型トランジスタ / エッチングダメージ / 半導体デバイス / ナノ加工 / シリコン酸窒膜 / 薄膜形成 |
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| Research Abstract |
We have developed a high-performance neutral beam (NB) system. It achieved high neutralization efficiency and high flux by utilizing negative ions for the first time.
A 50-nm-width metal-oxide-semiconductor (MOS) gate etching process was established using the NB system. The oxide leakage current achieved for a MOS capacitor etched by the neutral beam was one order of magnitude lower than that achieved by conventional plasma etching.
A highly selective and low-damage damascene process for porous methyl-silsesquioxane (porous MSQ, k-2.2) films has been realized using the NB system. Use of a SF_6 or CF_4 neutral beam enables etching of porous MSQ with higher selectivity to the photoresist than what can be obtained in a conventional plasma. This is considered to be because the neutral beam eliminates exposure to ultraviolet (UV) light which enhances the resist etching.
Pulse-time-modulated N_2 NB was used to form ultrathin oxynitride films. SiO-N bonds were effectively formed and a shallower, sharper, and higher density N concentration profile in a thin 2 nm SiO_2 film was produced using a pulsed N_2 NB.
Fin-type vertical MOSFETs with damage-less smooth sidewalls were successfully fabricated using the NB system. The fabricated FinFETs realized higher electron mobility than that using a conventional reactive ion etching. The improved mobility is well explained by the atomically-flat surface.
We fabricated nanocolumn structure by using a low energy neutral beam and a ferritin iron-core mask. The iron core in the ferritin was 7 nm in diameter, which was identical to that of the etched nanocolumn. This indicates that neutral-beam etching transferred the structure and size of the iron core to the silicon substrate.
These results indicate that the NB can perform atomically damage-free etching and surface modification of inorganic and organic materials. This technique is a promising candidate for the practical fabrication technology for future nano-devices.
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