Development of Ultra-High Speed Switching Devices by Use of Carbon Nanotubes
| Project/Area Number |
15360020
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Mie University |
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Principal Investigator |
HATA Koichi Mie University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (30228465)
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| Co-Investigator(Kenkyū-buntansha) |
SAITO Yahachi Nagoya University, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (90144203)
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| Project Period (FY) |
2003 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥6,500,000 (Direct Cost: ¥6,500,000)
Fiscal Year 2004: ¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 2003: ¥4,800,000 (Direct Cost: ¥4,800,000)
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| Keywords | Carbon Nanotube / Adsorption and Desorption / Field Electron Emission / Photon Stimulated Desorption / Electronic Nano Devices / 光励起脱離 |
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| Research Abstract |
To develop an ultra-high speed switching device by means of molecular dynamics, fundamental properties of field electron emission from a single pentagon located at a tip end of multi-wall carbon nanotube. Current-voltage (I-V) characteristics of the pentagon with clean surface or adsorbed hydrogen molecule were measured by field emission microscopy. Switching actions with reproducibility were observed in the emission current for adsorption and desorption of a hydrogen molecule. Pulse irradiation of Nd;YAG laser with the wavelength on 532nm made possible to desorb a hydrogen molecule artificially without any damage of substrate pentagon.
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Report
(3 results)
Research Products
(11 results)
