The development of the element process technology for the new type LSI of the product layer by VUV-CVD
| Project/Area Number |
15360194
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | University of Miyazaki |
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Principal Investigator |
KAMEYAMA Akihiro (2005) University of Miyazaki, Dept.of Electrical & Electronic Eng., Research Assistant, 工学部, 助手 (00264367)
黒澤 宏 (2003-2004) 宮崎大学, 工学部, 教授 (80109892)
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| Co-Investigator(Kenkyū-buntansha) |
YOKOTANI Atsushi University of Miyazaki, Dept.of Electrical & Electronic Eng., Assistant professor, 工学部, 助教授 (00183989)
亀山 晃弘 宮崎大学, 工学部, 助手 (00264367)
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| Project Period (FY) |
2003 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥14,400,000 (Direct Cost: ¥14,400,000)
Fiscal Year 2005: ¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 2004: ¥5,000,000 (Direct Cost: ¥5,000,000)
Fiscal Year 2003: ¥7,200,000 (Direct Cost: ¥7,200,000)
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| Keywords | VUV-CVD / System LSI / femto-second laser / 真空紫外光 / エキシマランプ / 光CVD / 半導体絶縁膜 / System in Package / 真空紫外 / Sip / システムLSI |
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| Research Abstract |
High-performance of the system LSI is being looked for in the information-technology society. The high density of the LSI, the technology research and development of the miniaturization have been advanced since before. It is not a two-dimensional integrated circuit, but you must make the three-dimensional integrated circuit, that is, the product layer type for more high density. It is very important to establish the preparation technology of the product layer pattern system LSI which put more than one function specially and together in one chip. The depth of the via hole of the system LSI was about several 100μm, and the depth of the via hole of the system LSI was uniform and difficult to make an excellent insulation film in the insulation character so far with the technology. We developed the new technology (VUV-CVD method) that a silicone pale film which oxidized by the photo-chemical reaction of an organic silicone compound by the vacuum purple outside light was made. It is possible in this method that an insulation film is made to accumulate in the via hole of the system LSI that it is deep because a pale film can be made if it is the place where light appears. So, the development of the process technology for the next generation product layer pattern system LSI was done by using VUV-CVD method in this research.
A plasma-etching device was made in 2003. A pale film insulated by the vacuum purple outside light CVD on the side of the via hole of the depth 5-50μm made in the Si circuit board or the quartz glass circuit board by the plasma etching law, a diameter 5-50mm was made to accumulate in a 2004〜2005.
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Report
(4 results)
Research Products
(58 results)
