| Project/Area Number |
15360329
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Physical properties of metals
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| Research Institution | Kyoto University (2005)
Tohoku University (2003-2004) |
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Principal Investigator |
MATSUBARA Eiichiro Kyoto University, Department of Materials Science, Professor, 工学研究科, 教授 (90173864)
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| Co-Investigator(Kenkyū-buntansha) |
SHISHIDO Toetsu Tohoku University, Institute for Materials Research, Associate professor, 金属材料研究所, 助教授 (50125580)
HAYASHI Koichi Tohoku University, Institute for Materials Research, Associate professor, 金属材料研究所, 助教授 (20283632)
KISHIMOTO Shunji High Energy Accelerator Research Organization, Institute of Materials Structure Science, Associate professor, 物質構造科学研究所, 助教授 (00195231)
NISHINO Yoshinori RIKEN SPring-8 Center, RIKEN Harima Institute, Senior researcher, 播磨研究所, 研究員 (40392063)
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| Project Period (FY) |
2003 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥15,300,000 (Direct Cost: ¥15,300,000)
Fiscal Year 2005: ¥3,300,000 (Direct Cost: ¥3,300,000)
Fiscal Year 2004: ¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2003: ¥8,300,000 (Direct Cost: ¥8,300,000)
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| Keywords | X-ray fluorescence / X-ray luminescence / X-ray holography / X-ray diffraction / scintillator / zinc oxide / 光ルミネッセンス / 局所構造 / 単結晶 |
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| Research Abstract |
X-ray excited optical luminescence (XEOL) has been applied to the site selective XAFS measurements. On the other hand, atomic resolution x-ray holography, which can determine local structure around a specified atom, normally uses the x-ray fluorescence. Before starting this project, there has been no idea of the use of XEOL for othe X-ray holography. To explore new analytical possibility of the XEOL application, we focused on X-ray incident beam angular anisotropy of the XEOL intensity and studied a feasibility of atomic resolution X-ray holography. A ZnO epitaxial film on Al_2O_3 (sapphire) single crystal was adopted for the sample in the present study, because the XEOL is known to be occurred for ZnO and sapphire. The experiments were done at the synchrotron radiation facility SPring-8. The observed intensity variation of the XEOL corresponded to the hologram pattern of Al_2O_3 substrate, which was different from the X-ray fluorescence hologram pattern of Zn Kα. In order to attribute
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the XEOL hologram, we estimated positions and amplitudes of the X-rat standing wave lines observed in the hologram patterns by averaging over a given direction of reciprocal lattice space. Measurement of the XEOL spectrum from the ZnO/Al_2O_3 showed that the luminescence from sapphire was dominant, and this was consistent with the result of the XEOL hologram. The X-ray holography measurement using x-ray fluorescence is generally difficult for light elements, such as Al or Si, because of its low cross section for inner shell ionization and the absorption by air. The present study demonstrates that hard x-ray holography measurement for light element can be easily carried out using XEOL. Moreover, we found that the ZnO/AL_2O_3 sample used here emit the strong ultraviolet luminescence (373 nm), which corresponded to bang gap of ZnO thin film, by cooling to 100 K. By selecting the luminescence from ZnO thin film using a grating monochromator, the hologram pattern of ZnO layer could be recorded. Less
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