Functional Designing and Development of Evaluation of Residual Stress in the Surface of Inorganic Materials
| Project/Area Number |
15360347
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Inorganic materials/Physical properties
|
|---|
| Research Institution | KYUSHU UNIVERSITY |
|---|
Principal Investigator |
ABE Hiroshi Kyushu University, Faculty of Engineering Sciences, Professor, 大学院・総合理工学研究院, 教授 (10294977)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
NAKASHIMA Hideharu Kyushu University, Faculty of Engineering Sciences, Associate Professor, 大学院・総合理工学研究院, 助教授 (80180280)
IKEDA Ken-chi Kyushu University, Faculty of Engineering Sciences, Research Associate, 大学院・総合理工学研究院, 助手 (20335996)
吉田 冬樹 九州大学, 大学院・総合理工学研究院, 講師 (30243968)
|
|---|
| Project Period (FY) |
2003 – 2004
|
| Project Status |
Completed (Fiscal Year 2004)
|
| Budget Amount *help |
¥15,400,000 (Direct Cost: ¥15,400,000)
Fiscal Year 2004: ¥3,500,000 (Direct Cost: ¥3,500,000)
Fiscal Year 2003: ¥11,900,000 (Direct Cost: ¥11,900,000)
|
|---|
| Keywords | Residual Stress / Single Crystal / Silicon Carbide / Crystalline Glass / Evaluation of Residual Stress Field / TEM / 3D Indentation Profile / Molecular Dynamics |
|---|
| Research Abstract |
1 Evaluation of residual stress of various materials
The range of distance in which the residual stress was observed was larger for single crystal SiC than for glass (Na-Ca-Si-O) at the primary load of 19.6N. The distance was 200μm for SiC and 300μm for glass, respectively. It was also found that the residual stress in SiC was several times larger than that in glass at an equivalent distance. The load at equivalent distance was 165MPa in SiC and 40MPa in glass, respectively.
2 The change of residual stress after heat treatment
In Si-Al-Li-O system glass, the residual stress was reduced by heat treatment and became zero near the strain point of 530℃. The residual stress curve of the crystallized glass shifted to high temperature side by about 100℃. In single crystal SiC, the residual stress started to decrease at about 800℃ and became zero at the heat treatment of 1400℃, 2hrs. The residual stress curve of polycrystalline SiC shifted a little to low temperature side.
3 Analysis of materials and discussion
The reduction of residual stress by heat treatment was observed in all materials and was accompanied with three dimensional shape of the indentation. MD simulation of the diffusion of ions showed that some ions such as Ti^<4+> had intermittent movement. It is considered that the increase in heat resistance by crystallization was caused due to the suppression of viscous flow of glass owing to the crystal phase.
TEM observation of single crystal SiC showed that basal slips along (0001) caused stacking faults and that the basal slip was prominent at the points close to the indentations and in the specimen which was heat treated at higher temperature. The heat resistance property which is important for semiconductor, optical and structural materials were in the order of SiC > crystallized glass > glass. The technique to evaluate residual stress can detect strain change and contribute to designing materials with high heat resistance and high functions.
|
Report
(3 results)
Research Products
(27 results)
