| Project/Area Number |
15360376
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Structural/Functional materials
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| Research Institution | National Institute for Materials Science (NIMS) |
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Principal Investigator |
KOIDE Yasuo National Institute for Materials Science (NIMS), Advanced Materials Laboratory, Senior Researcher, 物質研究所, 主席研究員 (70195650)
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| Co-Investigator(Kenkyū-buntansha) |
KANDA Hisao National Institute for Materials Science (NIMS), Advanced Materials Laboratory, Director, 物質研究所, ディレクター (30343841)
WATANABE Kenji National Institute for Materials Science (NIMS), Advanced Materials Laboratory, Senior Researcher, 物質研究所, 主任研究員 (20343840)
KOIZUMI Satoshi National Institute for Materials Science (NIMS), Advanced Materials Laboratory, Senior Researcher, 物質研究所, 主幹研究員 (90215153)
メイヨン リョオ 独立行政法人物質・材料研究機構, 物質研究所, 特別研究員
アルバレッツ ホセ 独立行政法人物質・材料研究機構, 物質研究所, 特別研究員
LIAO Meiyong National Institute for Materials Science (NIMS), Advanced Materials Laboratory, NIMS Postdoctoral Fellow
ALVAREZ Jose National Institute for Materials Science (NIMS), Advanced Materials Laboratory, NIMS Postdoctoral Fellow
寥 梅勇 独立行政法人物質・材料研究機構, 物質研究所, 特別研究員
ホセ アルバレッツ 独立行政法人物質・材料研究機構, 物質研究所, 特別研究員
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| Project Period (FY) |
2003 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥15,200,000 (Direct Cost: ¥15,200,000)
Fiscal Year 2005: ¥4,400,000 (Direct Cost: ¥4,400,000)
Fiscal Year 2004: ¥5,200,000 (Direct Cost: ¥5,200,000)
Fiscal Year 2003: ¥5,600,000 (Direct Cost: ¥5,600,000)
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| Keywords | Diamond / Ultraviolet sensor / photoconductivity / UV / visible blind ratio / Schottky contact / carbide / metallic nitride / MSM構造 / ショットキー接合 / ヘテロ接合 / p型およびn型 / pn接合 / ディープドーパント |
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| Research Abstract |
The purpose of this project is to develop a highly-sensitive ultraviolet light sensing method using diamond semiconductor as deep-UV (DUV) photodetector with response energy larger than 4.4 eV. For this purpose, Schottky photodiode and metal-semiconductor-metal (MSM) diode were fabricated. We developed thermally stable, highly sensitive Schottky-type photodiode for the first time by using thermally stable transition metal carbide and nitride Schottky contacts. The results obtained for three years are as follows.
(1)The Schottky photodiode with the transition metal carbide, WC, Schottky contact and annealed Ti/WC Ohmic contact was developed. The discrimination ratio between the DUV (220 nm) and visible light (630 nm) was as large as 10^6. The photoresponse properties of the photodiode was almost unchanged after thermal annealing up to 550 C for 3 h.
(2)The Schottky photodiode with the transition metal nitride, HfN, Schottky contact and annealed Ti/WC Ohmic contact was developed. This photodiode showed the high speed response time shorter than 0.3 s and the discrimination ratio between the DUV and visible light of 10^6 and simultaneously revealed the thermal stability up to 500 C.
(3)In order to apply the diamond sensor to the flame sensor, fully-packaged and bonded photodiode devices were fabricated. In corroboration with ANTEC Co.,the flame detection/alarm system using the diamond DUV sensor was demonstrated for the first time.
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