Homogeneous growth of SiGe bulk crystals by using the traveling liquidus-zone method
| Project/Area Number |
15560015
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Japan Aerospace and Exploration Agency |
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Principal Investigator |
ADACHI Satoshi Japan Aerospace and Exploration Agency, ISS Science Project Office, Associate Senior Scientist, 宇宙科学研究本部・ISS科学プロジェクト室, 副主任研究員 (80358746)
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| Co-Investigator(Kenkyū-buntansha) |
KINOSHITA Kyoichi Japan Aerospace Exploration Agency, ISS Science Project Office, Senior Scientist, 宇宙科学研究本部・ISS科学プロジェクト室, 主任研究員 (10358749)
YODA Shin-ichi Japan Aerospace Exploration Agency, Department of Space Biology and Microgravity Sciences, Professor, 宇宙科学研究本部・宇宙環境利用科学研究系, 教授 (00344276)
YOSHIZAKI Izumi Japan Aerospace Exploration Agency, ISS Science Project Office, Associate Senior Scientist, 宇宙科学研究本部・ISS科学プロジェクト室, 副主任研究員 (10371139)
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| Project Period (FY) |
2003 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2004: ¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 2003: ¥1,900,000 (Direct Cost: ¥1,900,000)
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| Keywords | Traveling Liquidus-zone Method / SiGe Compound Semiconductor / Estimation of Diffusion Coefficient / Estimation of Temperature Gradient / Numerical Simulation / Homogeneous Composition |
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| Research Abstract |
Our aims are (1)to verify that the traveling liquidus-zone(TLZ) method [1]is applicable to the homogeneous crystal growth of not only III-V compounds but also IV-IV compounds, and (2)to grow homogeneous SiGe bulk crystals by using the TLZ method.
In order to obtain homogeneous crystals, it is required to determine the optimum sample translation rate by calculating the theoretical TLZ model. This means that we must know the diffusion coefficient first. So we estimate the diffusion coefficient of 9.5×10^<-5> cm^2/s by comparing the numerical data obtained from the one-dimensional simulation with the experimental data. By using the estimated diffusion coefficient and the temperature gradient, the optimum sample translation rate of 0.234 mm/hr is calculated. Thus, by using the similar translation rate of 0.24 mm/hr to the calculated one, we succeed in growing the homogeneous bulk crystals of Si_<0.503>Ge_<0.497> with negligibly small deviation of the lattice constant, that is, about ±0.025 %.
The one-dimensional simulation is also carried out in order to know whether the growth mode is the TLZ mode or other growth modes. From the simulation results, it is found that the growth mode should be the TLZ mode but the deviation is slightly large as compared with the experimentally determined deviation, ±0.05 %. However, the deviation of the lattice constant is still negligibly small. As a conclusion, we believe that the TLZ method is applicable to the crystal growth of not only III-V compounds but also IV-IV compounds.
[1]K.Kinoshita et al., J.Crystal Growth,225(2001)59.
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Report
(3 results)
Research Products
(5 results)
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[Journal Article] Numerical analysis of growth rates in the traveling liquidus-zone method2004
Author(s)
S.Adachi, Y.Ogata, N.Koshikawa, S.Matsumoto, K.Kinoshita, I.Yoshizaki, M.Takayanagi, S.Yoda, A.Kadowaki, T.Tsuru, H.Miyata, Y.Muramatsu
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Journal Title
J.Crystal Growth Vol.270
Pages: 42-49
Description
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