Surface stress and electric properties of nitrided silicon oxide
| Project/Area Number |
15560026
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
N.ITAKURA Akiko National Institute for Materials Science, Materials Engineering Laboratory, Senior Researcher, 材料研究所, 主幹研究員 (20343858)
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| Co-Investigator(Kenkyū-buntansha) |
SHIMODA Masahiko National Institute for Materials Science, Materials Engineering Laboratory, Senior Researcher, 材料研究所, 主席研究員 (60343836)
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| Project Period (FY) |
2003 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2005: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2004: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2003: ¥2,100,000 (Direct Cost: ¥2,100,000)
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| Keywords | Surface Stress / Silicon Oxide / Plasma Nitridation / 表面応力 / シリコン酸化 / シリコン酸窒化 / 窒素ラジカル / 窒素イオン / 応力緩和 |
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| Research Abstract |
We have investigated the surface stress evolution under nitridation process of silicon oxide by plasma exited nitrogen. The compressive surface stress, which had been formed by thin oxide on Si (100) were relaxed by the nitridation. During the nitridation, more than 40% of the initial compressive stress in 3nm oxide was relaxed. We measured the stress evolution for plasma oxide films and thermal oxide films with thickness of 2-5 nm and found the same amount of the relaxation of oxide stress. Less than 3 % of nitrogen was incorporated in SiO_2, and not located at the SiO_2/Si interface but uniformly distributed in the film with forming a N- Si_2O bonding.
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Report
(4 results)
Research Products
(13 results)
