Development for the Synthesis of Very Hard Thin Films by Electron Beam Excited Plasma
| Project/Area Number |
15560106
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Meijo University |
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Principal Investigator |
PETROS Abraha Meijo University, Faculty of science and Thchnology, Associate Professor, 理工学部, 助教授 (60308939)
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| Project Period (FY) |
2003 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥3,200,000 (Direct Cost: ¥3,200,000)
Fiscal Year 2004: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 2003: ¥2,600,000 (Direct Cost: ¥2,600,000)
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| Keywords | Electron beam / Plasma / Boron target / Acceleration voltage / Substrate bias / Sputtering / very hard coating / BN thin films / c-BN膜 |
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| Research Abstract |
The primary plasma sources for the production of atomic nitrogen has been the conventional plasma sources, including electron cyclotron resonance (ECR) plasma, radio frequency (RF) plasma, do glow discharge, cold cathode gun. These plasma sources however use small volume and need a high pressure and discharge voltage to produce sufficient flux of atomic nitrogen for plasma processing. The maximum cross section for nitrogen dissociation is about 60-130 eV. These means that a high dissociation rate of nitrogen can be achieved if the electron energy were around the maximum cross section In this experiment the electron-beam-excited plasma (EBEP) deposition system used was designed to produce electron beam energy of 50-150 eV. At first, the plasma parameters discharge current I_b, acceleration voltage V_a, rf bias voltage V_<dc> and N_2/Ar ratio were determined in view of the deposit thickness and crystal structure to be I_b=3.4A, V_a=120V V_<dc>=600V and N_2/Ar=8/10 sccm. The target substrate distance was then varied and the synthesized films were evaluated The deposition rate of the sputtering system was estimated to be about 10nm/min. This deposition rate is comparable to other sputtering systems reported in literature. In evaluating the synthesized films, the AES results show the synthesized film was formed out of boron and nitrogen atoms with a 1:1 ratio. The bonding state analysis of the FTIR show peaks at 780cm^<-1> and 1370cm^<-1> indicating formation of h-BN thin film. For target substrate distance of 50mm, the hardness and war volume were measured to be 10.3 GPa and 0.013mm^3, respectively. The friction coefficient and surface roughness were both independent of the target substrate distance with values of 4.5nm and 0.085, respectively.
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Report
(3 results)
Research Products
(2 results)
