| Project/Area Number |
15560282
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Shizuoka Institute of Science and Technology |
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Principal Investigator |
DOHI Minoru Shizuoka Institute of Science and Technology, Faculty of Science and Technology, Associate Professor, 理工学部, 助教授 (80247577)
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| Co-Investigator(Kenkyū-buntansha) |
KAWAMURA Kazuhiko Shizuoka Institute of Science and Technology, Faculty of Science and Technology, Professor, 教授 (20022139)
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| Project Period (FY) |
2003 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥3,100,000 (Direct Cost: ¥3,100,000)
Fiscal Year 2004: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2003: ¥2,200,000 (Direct Cost: ¥2,200,000)
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| Keywords | Diamond / Thin Films / Microwave CVD / Field Emission / FEA / Vacuum microelectric devices / Image Sensor / DLC |
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| Research Abstract |
The diamond-like carbon (DLC) films were prepared on silicon substratum by a microwave CVD method. The apparatus was improved. A sleeve to introduce microwave was settled upward to cool an O-ring between the chamber and reaction tube. This improvement stabilized the preparation of DLC films. The microwave power was 500W. Hydrogen and methane were used as source gases. A total gas pressure was 50 to 100 Pa, a total gas flow rate was 120 con, a methane concentration was 5 % and a growth duration was 1hr. DLC particles, 0.2 μm in diameter, were produced at the center of the reaction tube. DLC films were produced at positions under the reaction tube center. Raman spectra were measured. Two peaks, one in the D band and the other in the G band, were observed at about 1300 and 1600 cm^<-1>, respectively. The intensity ratio of the D peak and the G peak was larger than 1.
DLC films were prepared on silicon substratum evaporated iron or nickel. The thickness of the films was thicker than that on the non-evaporated substrate. These DLC films peeled easily from the silicon substratum. The application for the emitter is. therefore, difficult.
The substrate holder was biased at 0 to -250V by a DC power supply (Matsusada Precision inc. PQ250-3). The negative DC bias enhanced nucleation of DLC films.
A field emitter array (FEA) was produced using DLC films. It is expected to improve and stabilize emission characteristics. The emission current ratio of the DLC coated emitter and non-coated molybdenum emitter was about 10.
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