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Study on the method for the measurements of both emissivity and temperature of semiconductor materials.

Research Project

Project/Area Number 15560364
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Measurement engineering
Research InstitutionToyo University

Principal Investigator

IUCHI Tohru  Toyo University, Engineering, Professor, 工学部, 教授 (20232142)

Project Period (FY) 2003 – 2004
Project Status Completed (Fiscal Year 2004)
Budget Amount *help
¥3,200,000 (Direct Cost: ¥3,200,000)
Fiscal Year 2004: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 2003: ¥2,000,000 (Direct Cost: ¥2,000,000)
Keywordssemiconductor materials / silicon / emissivity / temperature measurement / thin film / oxide film / radiation thermometry / polarization / 酸化 / 透過率
Research Abstract

This research includes the feasibility study on the development of a hybrid type surface thermometer and the availability of emissivity-invariant condition. The research results are summarized as follows.
1.The accuracy of a hybrid-type surface thermometer that has been manufactured by way of trial is -5 K in systematic errors and ±1 K in random errors near 700 K. A hybrid-type surface thermometer comprised of a fiber rod that can measure a small area (1 mmΦ)) in vacuum also has been manufactured.
2.The emissivity-invariant condition that is valid near room temperature for silicon wafers is not necessarily available at high temperature. The investigation on the phenomenon should be carried out from now.
3.New radiation thermometry for semitransparent silicon wafers with the oxide film (SiO_2) near room temperature has been proposed using Brewster angle at 55.2° and p-polarized radiance at a wavelength of 4.7 μm. In this method, two blackbodies are introduced in the measurement system ; the one is used for reflectivity measurement of wafers and the other is used for providing constant radiance that comes through the rear side of the semitransparent wafer. The emissivity of the specimen is calculated by the reflectivity and transmissivity, thus the temperature of the sample can be obtained.
4.By using the simulation model for estimating the optical properties of silicon wafers, a one-to-one relation between a ratio of p- and s-polarized radiances and an emissivity at some specific conditions was found out, which was experimentally confirmed at higher temperature over 900 K where the silicon wafer became opaque. Based on these results, new radiation thermometry that can measure the temperature and spectral emissivity of silicon wafers at a wavelength of 0.9 μm and at moderately high temperature irrespective of the emissivity change due to the oxide film thickness was proposed

Report

(3 results)
  • 2004 Annual Research Report   Final Research Report Summary
  • 2003 Annual Research Report
  • Research Products

    (66 results)

All 2005 2004 2003 2002 Other

All Journal Article (55 results) Publications (11 results)

  • [Journal Article] 電気抵抗率の違いによるSiウエハの放射率変化2005

    • Author(s)
      平加健介, 大久保智裕, 井内徹
    • Journal Title

      第52回応用物理学関係連合講演会 3月,No.1 1p-M-5

      Pages: 209-209

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] 電気抵抗率の違いによるSiウエハの透過率測定と常温域放射測温法への応用2005

    • Author(s)
      菅原弘司, 池田義和, 井内徹
    • Journal Title

      第52回応用物理学関係連合講演会 3月,No.1 1p-M-6

      Pages: 210-210

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] 高温域におけるSiウエハの放射率挙動の研究2005

    • Author(s)
      平加健介, 大久保智裕, 井内徹
    • Journal Title

      第1回先端光応用計測研究センター成果報告会要旨集 2月

      Pages: 91-92

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] 常温域におけるSiウエハの放射率挙動の研究2005

    • Author(s)
      池田義和, 野島孝, 橋本克己, 山崎徹, 菅原弘司, 井内徹
    • Journal Title

      第1回先端光応用計測研究センター成果報告会要旨集 2月

      Pages: 93-94

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] 双方向角度制御した反射率測定装置の開発とSiウエハへの応用2005

    • Author(s)
      鈴木健仁, 宮崎孝行, 但木徹, 井内徹
    • Journal Title

      第1回先端光応用計測研究センター成果報告会要旨集 2月

      Pages: 95-96

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Emissivity behaviors of silicon wafers with different resistivity.2005

    • Author(s)
      K.Hiraka, T.Ohkubo, T.Iuchi
    • Journal Title

      The 52^<nd> Spring Meeting, Extended Abstracts, The Japan Society of Applied Physics and Related Societies No.1, 1p-M-5

      Pages: 209-209

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Transmissivity measurement of silicon wafers with different resistivity and application to radiation thermometry.2005

    • Author(s)
      Y.Ikeda, H.Sugawara, T.Iuchi
    • Journal Title

      The 52^<nd> Spring Meeting, Extended Abstracts, The Japan Society of Applied Physics and Related Societies No.1, 1p-M-6

      Pages: 210-210

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Study on emissivity behaviors of silicon wafers at high temperature.2005

    • Author(s)
      K.Hiraka, T.Ohkubo, T.Iuchi
    • Journal Title

      Proc.of the 1st Symposium on Sensor Photonics, Sensor Photonics Research Center, Toyo Univ.February

      Pages: 91-92

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Study on emissivity behaviors of silicon wafers near room temperature.2005

    • Author(s)
      Y.Ikeda, T.Nojima, K.Hashimoto, T.Yamasaki, H.Sugawara, T.Iuchi
    • Journal Title

      Proc.of the 1st Symposium on Sensor Photonics, Sensor Photonics Research Center, Toyo Univ.February

      Pages: 95-96

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Development of a measurement apparatus of specular reflectivity and its application to silicon wafers.2005

    • Author(s)
      T.Suzuki, T.Miyazaki, T.Tadaki, T.Iuchi
    • Journal Title

      Proc.of the 1st Symposium on Sensor Photonics, Sensor Photonics Research Center, Toyo Univ.February

      Pages: 95-96

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] 電気抵抗率の違いによるSiウエハの透過率測定と常温域放射測温法への応用2005

    • Author(s)
      菅原弘司, 池田義和, 井内徹
    • Journal Title

      第52回応用物理学関係連合講演会

    • Related Report
      2004 Annual Research Report
  • [Journal Article] 電気抵抗率の違いによるSiウエハの放射率変化2005

    • Author(s)
      平加健介, 大久保智裕, 井内徹
    • Journal Title

      第52回応用物理学関係連合講演会

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Some considerations for a method that simultaneously measure the temperature and emissivity of a metal in a high temperature furnace2004

    • Author(s)
      T.Iuchi, T.Furukawa
    • Journal Title

      Review of Scientific Instruments 75-12

      Pages: 5326-5332

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] 高温炉内鋼板の放射測温法2004

    • Author(s)
      古川徹, 佐藤伸治, 井内徹
    • Journal Title

      計測自動制御学会論文集 40-4

      Pages: 376-381

    • NAID

      10012855017

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Polarized radiation thermometry of silicon wafers near room temperature2004

    • Author(s)
      H.Sugawara, T.Iuchi
    • Journal Title

      Proc.of SICE2004 August Sapporo

      Pages: 646-649

    • NAID

      130006960396

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Polarized radiation thermometry of silicon wafers at high temperature2004

    • Author(s)
      T.Ohkubo, T.Iuchi
    • Journal Title

      Proc.of SICE2004 August Sapporo

      Pages: 654-657

    • NAID

      130005441152

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Si半導体ウエハの光学的特牲の測定と放射測温法への応用2004

    • Author(s)
      菅原弘司, 大久保智裕, 井内徹
    • Journal Title

      第21回センシングフォーラム 9月 東京

      Pages: 123-127

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] 偏光輝度を利用したSiウエハの放射測温法2004

    • Author(s)
      大久保智裕, 菅原弘司, 井内徹
    • Journal Title

      第65回応用物理学会学術講演会予稿集 9月,No.1 3p-ZQ-9

      Pages: 133-133

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] ブリュースター角を利用した常温付近におけるSi半導体ウエハの放射測温怯2004

    • Author(s)
      菅原弘司, 大久保智裕, 井内徹
    • Journal Title

      第65回応用物理学会学術講演会予稿集 9月,No.1 3p-ZQ-10

      Pages: 134-134

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] 高温炉内における金属表面温度計測法2004

    • Author(s)
      古川徹, 佐藤伸治, 井内徹
    • Journal Title

      第51回応用物理学関係連合講演会 3月,No.3 29p-R-5

      Pages: 1106-1106

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] 高温下におけるSiウエハの偏光透過率測定2004

    • Author(s)
      大久保智裕, 菅原弘司, 井内徹
    • Journal Title

      第51回応用物理学関係連合講演会 3月,No.1 29a-YB-10

      Pages: 174-174

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] 常温域におけるSiウエハの放射率・透過率測定2004

    • Author(s)
      菅原弘司, 大久保智裕, 井内徹
    • Journal Title

      第51回応用物理学関係連合講演会 3月,No.1 29p-YB-9

      Pages: 177-177

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] 高温下におけるSi半導体ウエハの放射率・透過率測定2004

    • Author(s)
      街寧, 島村直樹, 遠藤宏子, 大久保智裕, 井内徹
    • Journal Title

      第3回東洋大学工業技術研究所講演会予稿集 2月

      Pages: 17-18

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] 常温付近におけるSi半導体ウエハの放射率・透過率測定2004

    • Author(s)
      山本拡樹, 笹原吉弘, 菅原弘司, 井内徹
    • Journal Title

      第3回東洋大学工業技術研究所講演会予稿集 2月

      Pages: 19-20

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Some considerations for a method that simultaneously measure the temperature and emissivity of a metal in a high temperature furnace.2004

    • Author(s)
      T.Iuchi, T.Furukawa
    • Journal Title

      Review of Scientific Instruments 75-12

      Pages: 5326-5332

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Radiation thermometry of a steel sheet in a high temperature furnace.2004

    • Author(s)
      T.Furukawa, N.Sato, T.Iuchi
    • Journal Title

      Trans.of the Society of Instruments and Control Engineers 40-4

      Pages: 376-381

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Polarized radiation thermometry of silicon wafers at high temperature.2004

    • Author(s)
      T.Ohkubo, T.Iuchi
    • Journal Title

      Proc.of SICE 2004, Sapporo

      Pages: 654-657

    • NAID

      130005441152

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Measurement of optical properties of Si wafers and their applications to radiation thermometry.2004

    • Author(s)
      H.Sugawara, T.Ohkubo, T.Iuchi
    • Journal Title

      21^<st> Sensing Forum, Tokyo

      Pages: 123-127

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Radiation thermometry of silicon wafers by use of polarized radiation.2004

    • Author(s)
      T.Ohkubo, H.Sugawara, T.Iuchi
    • Journal Title

      The 65^<th> Autumn Meeting, Extended Abstracts, The Japan Society of Applied Physics No.1, 3p-ZQ-9

      Pages: 133-133

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Measurements of emissivity and transmissivity of temperature by use of Brewster angle.2004

    • Author(s)
      H.Sugawara, T.Ohkubo, T.Iuchi
    • Journal Title

      The 65^<th> Autumn Meeting, Extended Abstracts, The Japan Society of Applied Physics No.1, 3p-ZQ-10

      Pages: 134-134

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] A method for the measurement of surface temperature of a metal in a high temperature furnace.2004

    • Author(s)
      T.Furukawa, N.Sato, T.Iuchi
    • Journal Title

      The 51^<st> Spring Meeting, Extended Abstracts, The Japan Society of Applied Physics and Related Societies No.3, 29p-R-5

      Pages: 1106-1106

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Polarized transmissivity measurements of a Si semiconductor wafer at high temperature.2004

    • Author(s)
      T.Ohkubo, H.Sugawara, T.Iuchi
    • Journal Title

      The 51^<st> Spring Meeting, Extended Abstracts, The Japan Society of Applied Physics and Related Societies No.1, 29a-YB-10

      Pages: 174-174

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Measurement of emissivity and transmissivity of Si silicon wafers at high temperature.2004

    • Author(s)
      H.Sugawara, T.Ohkubo, T.Iuchi
    • Journal Title

      The 51^<st> Spring Meeting, Extended Abstracts, The Japan Society of Applied Physics and Related Societies No.1, 29p-YB-9

      Pages: 177-177

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Measurements of emissivity and transmissivity of silicon wafers at high temperature2004

    • Author(s)
      Y.Chimata, N.Shimamura, H.Endo, T.Ohkubo, T.Iuchi
    • Journal Title

      Proc.of the 3^<rd> Conference of Research Institute of Industrial Technology, Toyo Univ.February

      Pages: 17-18

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Measurements of emissivity and transmissivity of silicon wafers near room temperature2004

    • Author(s)
      H.Yamamoto, Y.Sasahara, H.Sugawara, T.Iuchi
    • Journal Title

      Proc.of the 3^<rd> Conference of Research Institute of Industrial Technology, Toyo Univ.February

      Pages: 19-20

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] 高温炉内鋼板の放射測温法2004

    • Author(s)
      古川徹, 井内徹
    • Journal Title

      計測自動制御学会論文集 40・4

      Pages: 376-381

    • NAID

      10012855017

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Polarized radiation thermometry of silicon wafers near room temperature2004

    • Author(s)
      H.Sugawara, T.Iuchi
    • Journal Title

      Proc.of SICE2004

      Pages: 646-649

    • NAID

      130006960396

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Polarized radiation thermometry of silicon wafers at high temperature2004

    • Author(s)
      T.Ohkubo, T.Iuchi
    • Journal Title

      Proc.of SICE2004

      Pages: 654-657

    • NAID

      130005441152

    • Related Report
      2004 Annual Research Report
  • [Journal Article] 偏光輝度を利用したSiウエハの放射測温法2004

    • Author(s)
      大久保智裕, 菅原弘司, 井内徹
    • Journal Title

      第65回応用物理学会学術講演会予稿集 No.1

      Pages: 133-133

    • Related Report
      2004 Annual Research Report
  • [Journal Article] ブリュースター角を利用した常温付近におけるSi半導体ウエハの放射測温法2004

    • Author(s)
      菅原弘司, 大久保智裕, 井内徹
    • Journal Title

      第65回応用物理学会学術講演会予稿集 No.1

      Pages: 134-134

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Si半導体ウエハの光学的特性の測定と放射測温法への応用2004

    • Author(s)
      菅原弘司, 大久保智裕, 井内徹
    • Journal Title

      第21回センシングフォーラム

      Pages: 123-127

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Some considerations for a method that simultaneously measures the temperature and emissivity of a metal in a high temperature furnace2004

    • Author(s)
      T.Iuchi, T.Furukawa
    • Journal Title

      Review of Scientific Instruments 75・12

      Pages: 5326-5332

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Emissivity modeling of metals during the growth of oxide film and comparison of the model with experimental results2003

    • Author(s)
      T.Iuchi, T.Furukawa, S.Wada
    • Journal Title

      Applied Optics 42-13

      Pages: 2317-2326

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Radiation thermometry in high temperature furnace2003

    • Author(s)
      T.Iuchi, T.Furukawa
    • Journal Title

      Proc.of 17^<th> IMEKO WORLD CONGRESS June Dubrovnik

      Pages: 1632-1637

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Emissivity measurement of silicon semiconductor wafer near room temperature2003

    • Author(s)
      S.Sugawara, T.Ohkubo, T.Fukushima, T.Iuchi
    • Journal Title

      Proc.of SICE2003 August Fukui

      Pages: 580-583

    • NAID

      130005440376

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Emissivity-compensated radiation thermometry of metals by the use of polarization in a high temperature furnace and near room temperature2003

    • Author(s)
      T.Iuchi
    • Journal Title

      International workshop on radiation measurements of the bodies with unknown emissivity November Moscow

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] 高温炉内ステンレス鋼板の放射測温法2003

    • Author(s)
      古川徹, 井内徹
    • Journal Title

      第20回センシングフォーラム 9月 東京

      Pages: 95-100

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] 高温下におけるSiウエハの放射率変化2003

    • Author(s)
      大久保智裕, 菅原弘司, 井内徹
    • Journal Title

      第64回応用物理学会学術講演会予稿集 8月,No.1 2a-ZH-9

      Pages: 127-127

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Emissivity modeling of metals during the growth of oxide film and comparison of the model with experimental results.2003

    • Author(s)
      T.Iuchi, T.Furukawa, S.Wada
    • Journal Title

      Applied Optics 42-13

      Pages: 2317-2326

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Radiation thermometry in high temperature2003

    • Author(s)
      T.Iuchi, T.Furukawa
    • Journal Title

      Proc.of 17^<th> IMEKO WORLD CONGRESS

      Pages: 1632-1637

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Emissivity measurement of silicon semiconductor wafer near room temperature.2003

    • Author(s)
      H.Sugawara, T.Ohkubo, T.Fukushima, T.Iuchi
    • Journal Title

      Proc.of SICE 200., Fukui

      Pages: 580-583

    • NAID

      130005440376

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Emissivity-compensated radiation thermometry of metals by the use of polarization in a high temperature and near room temperature.2003

    • Author(s)
      T.Iuchi
    • Journal Title

      International workshop on radiation measurements of the bodies with unknown emissivity, November, Moscow

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Radiation pyrometry of stainless steel in a high temperature furnace.2003

    • Author(s)
      T.Furukawa, T.Iuchi
    • Journal Title

      20^<th> Sensing Forum, Tokyo

      Pages: 95-100

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Emissivity behaviors of a Si semiconductor wafer at high temperature2003

    • Author(s)
      T.Ohkubo, H.Sugawara, T.Iuchi
    • Journal Title

      The 64^<th> Autumn Meeting, Extended Abstracts, The Japan Society of Applied Physics No.1, 2a-ZH-9

      Pages: 127-127

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Polarized radiation thermometry of silicon wafers near room temperature.2002

    • Author(s)
      H.Sugawara, T.Iuchi
    • Journal Title

      Proc.of SICE 2004, Sapporo

      Pages: 646-649

    • NAID

      130006960396

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Publications] 古川徹, 佐藤伸治, 井内徹: "高温炉内鋼板の放射測温法"計測自動制御学会論文集. 40・4(in print). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Iuchi, T.Furukawa, S.Wada: "Emissivity modeling of metals during the growth of oxide film and comparison of the metal with experimental results"Applied Optics. 42・13. 2317-2326 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Iuchi: "Emissivity-compensated radiation thermometry of metals by the use of polarization in a high temperature furnace and near room temperature"International Workshop on Radiation Measurement of Real ; Temperature of Bodies with Unknown Radiant Emittance. (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Iuchi, T.Furukawa: "Radiation thermometry in high temperature furnace"Proc.of 17^<th> IMEKO WORLD CONGRESS. 1632-1637 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] 古川徹, 佐藤伸治, 井内徹: "高温炉内における金属表面温度計測法"第51回応用物理学関係連合講演会. 29p-R-5. (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] 大久保智裕, 菅原弘司, 井内徹: "高音域におけるSiウエハの偏光透過特性"第51回応用物理学関係連合講演会. 29a-YB-10. (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] 菅原弘司, 大久保智裕, 井内徹: "常温域におけるSiウエハの偏光放射率・透過特性"第51回応用物理学関係連合講演会. 29p-YB-9. (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] 街寧, 島村直樹, 遠藤宏子, 大久保智裕, 井内徹: "高温下におけるSi半導体ウエハの放射率・透過率測定"第3回東洋大学工業技術研究所講演会. 17-18 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] 山本拡樹, 笹原吉弘, 菅原弘司, 井内徹: "常温付近におけるSi半導体ウエハの放射率・透過率測定"第3回東洋大学工業技術研究所講演会. 19-20 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] 古川徹, 井内徹: "高温炉内ステンレス鋼板の放射測温法"第20回センシングフォーラム. 東京農工大. 95-100 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] S.Sugawara, T.Ohkubo, T.Fukushima, T.Iuchi: "Emissivity measurement of silicon semiconductor wafer near room temperature"Proc.of SICE2003. Fukui University. 580-583 (2003)

    • Related Report
      2003 Annual Research Report

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Published: 2003-04-01   Modified: 2016-04-21  

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