| Co-Investigator(Kenkyū-buntansha) |
TOYODA Minoru Kanagawa Dental College, Department of dentistry, professor, 歯学部, 教授 (30130925)
KIMOTO Katuhiko Kanagawa Dental College, Department of dentistry, Assistant professor, 歯学部, 講師 (70205011)
TANAKA Kinya Kanagawa Dental College, Department of dentistry, Assistant professor, 歯学部, 講師 (10257305)
SONODA Tutomu National Institute of Advance Industrial and Technology(AIST), Nagoya Japan, サステナブルマテリアル研究部門, 主任研究員 (80357334)
WATAZU Akira National Institute of Advance Industrial and Technology(AIST), Nagoya Japan, サステナブルマテリアル研究部門, 研究員 (90358375)
星 憲幸 神奈川歯科大学, 歯学部, 助手 (20339782)
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| Budget Amount *help |
¥3,200,000 (Direct Cost: ¥3,200,000)
Fiscal Year 2005: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2004: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2003: ¥1,400,000 (Direct Cost: ¥1,400,000)
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| Research Abstract |
The purpose of this research realizes the mixture sputtering of titanium metal and β-TCP for acceleration of ossification and tophaceous osteosynthesis.
We tried to control the formation of a coating film by the adjustment of the RF power supply which was individually independent. Then, it was analyzed the formation of coating film. We used β-TCP as the target, and a film was formed by Sputtering method. We did these experiments in 2004 and 2005 years.
A coated Ca/P layer was being coated uniformly toward basic material, Ca and P elements mixed with the homogeneity. There was a rare contamination in the film, and O element existed in this layer in the amount of constant. C element was observed only in the surface from the analysis in the depth direction. We did Mixture Sputtering of β-TCP and titanium metal on the condition of RF 200 W and 90 minutes in 2005 years.
The coating surface was analyzed in the depth direction from surface by AXIS-ULTRA (Shimazu corp, Tokyo Japan).
A measurement condition went as follows, excitation power supply : monochlo A1Ka (1486.6 eV), 225 W (15 kV, 15 mA), spectral diameter : 300 x 700 μm, pass energy : 160 eV (survey), 20 eV (narrow).
An etching condition went as follows, emission current : 15 mA, acceleration voltage : 4.5 kV, etching rate: 5.8 nm/min (Si02 calibration), etching time : 5 minutes x 7 times.
Analysis result
1. Survey spectrum was observed the 35.56-43.68 % (O,1s), 26.84-33.09 % (Ti,2p), 4.52-6.14 % (Ca,2p), 16.79-20.28 % (C,1s), 5.14-8.59 % (P,2p).
2. O 1s had peak on 530 eV, combined with the metal.
3. P 2s had peak on 128 eV, it is not phosphoric acid ion, it exists as phosphorus compound.
In these results, we suggested that phosphorus didn't exist as phosphate, but it reacted with titanium and formed a phosphorus compound.
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