Properties of ultralow reflectance Si formed by surface structure chemical transfer method
Project/Area Number |
15H01997
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Research Category |
Grant-in-Aid for Scientific Research (A)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Nanostructural physics
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Research Institution | Osaka University |
Principal Investigator |
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Co-Investigator(Kenkyū-buntansha) |
松本 健俊 大阪大学, 産業科学研究所, 准教授 (20390643)
今村 健太郎 大阪大学, 産業科学研究所, 助教 (60591302)
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Project Period (FY) |
2015-04-01 – 2018-03-31
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Project Status |
Completed (Fiscal Year 2017)
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Budget Amount *help |
¥42,380,000 (Direct Cost: ¥32,600,000、Indirect Cost: ¥9,780,000)
Fiscal Year 2017: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
Fiscal Year 2016: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
Fiscal Year 2015: ¥25,090,000 (Direct Cost: ¥19,300,000、Indirect Cost: ¥5,790,000)
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Keywords | シリコンナノクリスタル層 / 屈折率勾配 / 太陽電池 / graded band-gap構造 / ナノ材料 / 表面・界面物性 / 表面パッシベーション / 反射率 / 結晶シリコン / シリコンナノクリスタル / ネットワーク構造 / 屈折率 / 化学的転写法 / 傾斜構造 / マイクロ、ナノデバイス / 傾斜材料 |
Outline of Final Research Achievements |
The valence band energy of a nanocrsytalline Si layer shows a downward shift with the surface structure chemical transfer treatment time, and the energy shift reaches ~0.4eV at maximum. The conduction band energy, on the other hand, is shifted upward by ~0.2eV at maximum. The conduction band of the nanocrystalline Si layer after formation of pn-junction is almost flat. These results show that the nanocrystalline Si layer possesses the grade band-gap structure, leading to effective separation of photo-generated electron hole pairs in the nanocrystalline Si layer, and thus preventing surface recombination.
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Report
(4 results)
Research Products
(37 results)
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[Journal Article] About the optical properties of oxidized black silicon structures2017
Author(s)
E. Pincik, R. Brunner, H. Kobayashi, M. Mikula, M. Kucera, P. Svec Jr., J. Gregus;, P. Vojtek, Z. Zabria, K. Imamura, M. Zahoran
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Journal Title
Applied Surface Science
Volume: 395
Pages: 185-194
DOI
Related Report
Peer Reviewed / Int'l Joint Research
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