Artificial photosynthesis devices using polarization-engineered nitride semiconductors for visible-light response and high durability

• Project/Area Number: 15H02238
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: The University of Tokyo
• Principal Investigator: Sugiyama Masakazu 東京大学, 先端科学技術研究センター, 教授 (90323534)
• Co-Investigator(Kenkyū-buntansha): 藤井 克司 北九州市立大学, 付置研究所, 教授 (80444016)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Project Status: Completed (Fiscal Year 2017)
• Budget Amount: ¥44,720,000 (Direct Cost: ¥34,400,000、Indirect Cost: ¥10,320,000); Fiscal Year 2017: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000); Fiscal Year 2016: ¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000); Fiscal Year 2015: ¥20,020,000 (Direct Cost: ¥15,400,000、Indirect Cost: ¥4,620,000)
• Keywords: 光触媒 / 化合物半導体 / 分極制御 / 有機金属気相成長 / 再生可能エネルギー / 半導体 / 結晶成長 / 光電気化学 / 窒化ガリウム / 表面構造 / フェルミエネルギー / GaN / エピタキシャル成長 / 分極

Outline of Final Research Achievements

A cathodic photoelectrode was successfully implemented using a polarization-engineered tunnel junction comprising an AlN thin layer and an n-type nitride photo absorber (GaN and InGaN). Cathodic operation was confirmed under Xe-lamp irradiation. The structure of the AlN thin layer was optimized using device simulation but several breakthroughs were necessary to implement the structure as designed, such as low-temperature growth and novel gas-switching sequence between GaN and AlN layers. Furthermore, modification of the GaN surface with Pt allowed us to sprit water photoelectrochemically without external bias application.

Research Products

• [Journal Article] Effects of hydrogen etching on stress control in AlN interlayer inserted GaN MOVPE on Si (2017)
  • Author(s): Liu Cai、Kumamoto Akihito、Suzuki Michihiro、Wang Hongbo、Sodabanlu Hassanet、Sugiyama Masakazu、Nakano Yoshiaki
  • Journal Title: Semiconductor Science and Technology Volume: 32 Issue: 7 Pages: 075003-075003
  • DOI: 10.1088/1361-6641/aa6b86
  • Peer Reviewed
• [Journal Article] Improved luminescence from InGaN/GaN MQWs by reducing initial nucleation density using sputtered AlN on sapphire substrate (2017)
  • Author(s): Wang Hongbo、Sodabanlu Hassanet、Daigo Yoshiaki、Seino Takuya、Nakagawa Takashi、Sugiyama Masakazu
  • Journal Title: Journal of Crystal Growth Volume: 465 Pages: 12-17
  • DOI: 10.1016/j.jcrysgro.2017.02.034
  • Peer Reviewed
• [Journal Article] Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode (2017)
  • Author(s): Akihiro Nakamura, Michihiro Suzuki, Katsushi Fujii, Yoshiaki Nakano, Masakazu Sugiyama
  • Journal Title: J. Crystal Growth Volume: 464 Pages: 180-184
  • DOI: 10.1016/j.jcrysgro.2016.12.005
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Mechanism of stress control for GaN growth on Si using AlN interlayers (2017)
  • Author(s): Michihiro Suzuki, Akihiro Nakamura, Yoshiaki Nakano, Masakazu Sugiyama
  • Journal Title: J. Crystal Growth Volume: 464 Pages: 148-152
  • DOI: 10.1016/j.jcrysgro.2016.12.090
  • Peer Reviewed
• [Journal Article] Photoelectrochemical Property Differences between NiO Dots and Layer on n-Type GaN for Water Splitting (2017)
  • Author(s): K. Koike, K. Yamamoto, S. Ohara, M. Sugiyama, Y. Nakano, K. Fujii
  • Journal Title: J. Electrochemical Soc. Volume: 42 Issue: 13 Pages: 9493-9499
  • DOI: 10.1149/2.1191613jes
  • Peer Reviewed
• [Journal Article] A 24.4% solar to hydrogen energy conversion efficiency by combining concentrator photovoltaic modules and electrochemical cells (2015)
  • Author(s): Akihiro Nakamura, Yasuyuki Ota, Kayo Koike, Yoshihide Hidaka, Kensuke Nishioka, Masakazu Sugiyama, Katsushi Fujii
  • Journal Title: Applied Physics Express Volume: 8 Issue: 10 Pages: 107101-107101
  • DOI: 10.7567/apex.8.107101
  • NAID: 210000137684
  • Peer Reviewed / Open Access
• [Presentation] Band Alignment at n-GaN/Electrolyte Interface Explored by Photo-Induced Offset of Open-Circuit Potential for Efficient Water Splitting (2017)
  • Author(s): Yuuki Imazeki, Yohei Iwai, Akihiro Nakamura, Kayo Koike, Shin-ichiro Sato, Takeshi Ohshima, Katsushi Fujii, Masakazu Sugiyama and Yoshiaki Nakano
  • Organizer: ECS Trans. 2017 volume 77, issue 4, 25-30, doi: 10.1149/07704.0025ecst
  • Int'l Joint Research
• [Presentation] Photo-Induced Gain of Open-Circuit-Potential (OCP) in GaN Photoelectrodes for Characterizing Defects and Photoelectrochemical Activity (2017)
  • Author(s): Y. Imazeki, Y. Iwai, A. Nakamura, K. Koike, K. Watanabe, K. Fujii , M. Sugiyama and Y. Nakano
  • Organizer: MRS Spring Meeting, ES7.9.03
  • Int'l Joint Research
• [Presentation] Polarization engineered photocathode using InGaN/AlN heterostructure for zero-bias solar water splitting (2017)
  • Author(s): A. Nakamura, H. Maruyama, Y. Nakano, K. Fujii, M. Sugiyama
  • Organizer: Material and Device Innovations for the Practical Implementation of Solar Fuels (SolarFuel17), Sep 4-6, Barcelona, 2017, SF1.4.1-7
  • Int'l Joint Research
• [Presentation] Pt co-catalyst by photo-electrodeposition on tandem nitride semiconductor photocathode for zero-bias solar water splitting (2017)
  • Author(s): H. Maruyama, A. Nakamura, Y. Nakano, K. Fujii, M. Sugiyama
  • Organizer: Material and Device Innovations for the Practical Implementation of Solar Fuels (SolarFuel17), Sep 4-6, Barcelona, 2017, SF1.4.2-5
  • Int'l Joint Research
• [Presentation] Visible Light Responding InGaN/AlN/GaN Polarization Engineered Water Splitting Photocathode (2016)
  • Author(s): A. Nakamura, K. Fujii, Y. Nakano and M. Sugiyama
  • Organizer: International Workshop on Nitride Semiconductors (IWN 2016)
  • Place of Presentation: Orlando, Florida, USA
  • Year and Date: 2016-10-02
  • Int'l Joint Research
• [Presentation] GaN における Open-Circuit-Potential (OCP) の光強度依存 性と表面処理の効果 (2016)
  • Author(s): 岩井耀平, 中村亮裕, 小池佳代, 中野義昭, 藤井克司, 杉山正和
  • Organizer: 第 77 回応用物理 学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ（新潟県・新潟市）
  • Year and Date: 2016-09-13
• [Presentation] InGaN/GaN/AlN/GaN可視光応答型水分解光電極 (2016)
  • Author(s): 中村亮裕, 杉山正和, 藤井克司, 中野義昭
  • Organizer: 第 77 回応用物理 学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ（新潟県・新潟市）
  • Year and Date: 2016-09-13
• [Presentation] Impact of surface modification on photo-induced Open-Circuit-Potential (OCP) of GaN anode (2016)
  • Author(s): Y. Iwai, A. Nakamura, K. Koike, Y. Nakano, K. Fujii, and M. Sugiyama
  • Organizer: 21st International Conference on Photochemical Conversion and Storage of Solar Energy
  • Place of Presentation: Saint Petersburg, Russia
  • Year and Date: 2016-07-25
  • Int'l Joint Research
• [Presentation] Superior Catalytic Activity of NiO Island on n-type GaN Photoanode Compared with NiO Protection Layer Structure (2016)
  • Author(s): K. Koike, A. Nakamura, K. Yamamoto, S. Ohara, M. Sugiyama, Y. Nakano, and K. Fujii
  • Organizer: 21st International Conference on Photochemical Conversion and Storage of Solar Energy
  • Place of Presentation: Saint Petersburg, Russia
  • Year and Date: 2016-07-25
  • Int'l Joint Research
• [Presentation] Low-Temperature Growth of Al(Ga)N/GaN Tunnel Junction with Abrupt Interfaces and Low Dislocation Density for Polarization Engineered Water Splitting Photocathode (2016)
  • Author(s): A. Nakamura, M. Suzuki, K. Fujii, Y. Nakano, and M. Sugiyama
  • Organizer: 18th International Conference on Metal Organic Vapor Phase Epitaxy
  • Place of Presentation: San Diego, USA
  • Year and Date: 2016-07-10
  • Int'l Joint Research
• [Presentation] echanism of Stress Control for GaN Growth on Si Using AlN Interlayers (2016)
  • Author(s): M. Suzuki, A. Nakamura, Y. Nakano, and M. Sugiyama
  • Organizer: 18th International Conference on Metal Organic Vapor Phase Epitaxy
  • Place of Presentation: San Diego, USA
  • Year and Date: 2016-07-10
  • Int'l Joint Research
• [Presentation] InGaN/AlGaN/GaN Polarization Engineered Water Splitting Photocathode under Visible Light Irradiation (2016)
  • Author(s): 中村亮裕, 藤井克司, 中野義昭, 杉山正和
  • Organizer: 第 35 回電子材料シンポジウム
  • Place of Presentation: ラフォーレ琵琶湖（滋賀県・守山市）
  • Year and Date: 2016-07-06
• [Presentation] GaN キャップ層導入による低温成長 AlN 層の高品質化および水分解光電極の 特性向上 (2016)
  • Author(s): 中村亮裕, 藤井克司, 中野義昭, 杉山正和
  • Organizer: 第 8 回窒化物半導体結晶成長講演会
  • Place of Presentation: 京都大学（京都府・京都市）
  • Year and Date: 2016-05-09
• [Presentation] Mechanism of stress control for GaN growth on Si using AlN interlayers (2015)
  • Author(s): Michihiro Suzuki, Akihiro Nakamura, Masakazu Sugiyama and Yoshiaki Nakano
  • Organizer: The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
  • Place of Presentation: Hamamatsu, Japan
  • Year and Date: 2015-11-08
  • Int'l Joint Research
• [Presentation] Enhanced photoelectrochemical properties of u-GaN/AlN/n-GaN photocathode with improved GaN/AlN interface abruptness (2015)
  • Author(s): Akihiro Nakamura, Michihiro Suzuki, Katsushi Fujii, Masakazu Sugiyama, and Yoshiaki Nakano
  • Organizer: The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
  • Place of Presentation: Hamamatsu, Japan
  • Year and Date: 2015-11-08
  • Int'l Joint Research
• [Presentation] Numerical Investigation on a Novel +c-Plane InGaN Based Solar Cell with a Polarization Induced Tunnel Junction (2015)
  • Author(s): Akihiro Nakamura, Katsushi Fujii, Masakazu Sugiyama, Yoshiaki Nakano
  • Organizer: 11th International Conference on Nitride Semiconductors (ICNS-11)
  • Place of Presentation: Beijing, China
  • Year and Date: 2015-08-31
  • Int'l Joint Research