| Budget Amount *help |
¥44,330,000 (Direct Cost: ¥34,100,000、Indirect Cost: ¥10,230,000)
Fiscal Year 2017: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2016: ¥13,130,000 (Direct Cost: ¥10,100,000、Indirect Cost: ¥3,030,000)
Fiscal Year 2015: ¥19,370,000 (Direct Cost: ¥14,900,000、Indirect Cost: ¥4,470,000)
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| Outline of Final Research Achievements |
Toward the establishment of a CMOS image sensor with photon countable sensitivity and high full well capacity with linear response, capable of clearly capturing image shooting targets over 5 decade of light illumination conditions, an ultra-high sensitivity signal readout technology was developed in this research based on formerly developed CMOS image sensors with lateral overflow integration capacitor (LOFIC). By the minimization of capacitance of floating diffusion that convert photo-electrons to voltage signal and the introduction of multiple gain column parallel amplifiers, a very low input-referred noise performance of 0.47 electrons was achieved. Moreover, signal readout noise of input-referred 0.2 electron and full well capacity of 50,000 electrons are estimated to be obtained by introducing multi sampling readout scheme of pixel signals and lowering thermal noise of signal readout chain.
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