| Budget Amount *help |
¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000)
Fiscal Year 2017: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2016: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2015: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
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| Outline of Final Research Achievements |
Total ionizing dose tolerances of current integrated circuits are limited to 300k - 1Mrad because semiconductor devices are fundamentally vulnerable to radiation. However, using programmable architecture, the total ionizing dose tolerances of integrated circuits can be increased if the integrated circuits can be repaired each time a permanent failure occurs. Nevertheless, current programmable devices cannot allow such repairable use because their serial programming functions fail immediately, even if only a few transistors on the devices are damaged. To increase the radiation tolerance of integrated circuits, this research presents a proposal of a new optoelectronic programmable device with a parallel light configuration architecture. This demonstration confirms a 1 Grad total-ionizing-dose tolerance on the optoelectronic programmable device using a non-radiation-hardened standard complementary metal oxide semiconductor process.
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